Diodes DMN2114SN User Manual
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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Power Circuits
• Lead Free By Design/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• "Green" Device (Note 3)
Mechanical Data
• Case: SC59
• Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.014 grams (approximate)
SC-59
Drain
NEW PRODUCT
ESD protected
TOP VIEW
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage Continuous
Drain Current Continuous
Pulsed
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Gate
Gate
Protection
Diode
Internal Schematic
V
DSS
V
GSS
ID
Source
20 V
±12
1.2
4.0
G
TOP VIEW
DMN2114SN
D
S
V
A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
R
Tj, T
Pd
JA
STG
500 mW
250
-55 to +150
°C /W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ Tj = 25°C I
Gate-Body Leakage
BV
DSS
I
GSS
DSS
20
⎯ ⎯
⎯ ⎯
⎯ ⎯
V
10
μA
±10 μA
VGS = 0V, ID = 250μA
= 24V, VGS = 0V
V
DS
V
= ±12V, VDS = 0V
GS
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
|
0.7
⎯ ⎯ ⎯
⎯
⎯
1.40 V
⎯
0.100
0.160
⎯
3.3
0.8 1.1 V
⎯
V
DS
V
Ω
S
GS
V
GS
VDS = 10V, ID = 0.5A
V
GS
= 10V, ID = 1.0mA
= 4.5V, ID = 0.5A
= 2.5V, ID = 0.5A
= 0V, IS = 1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
⎯
iss
C
⎯
oss
C
⎯
rss
180
120
45
⎯
⎯
⎯
pF
pF
pF
= 10V, VGS = 0V,
V
DS
= 1.0MHz
f
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes: 1. Pulse width ≤300μS, duty cycle ≤2%.
2. No purposefully added lead.
3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN2114SN
Document number: DS30829 Rev. 5 - 2
t
⎯
D(ON
t
⎯
D(OFF
t
⎯
t
⎯
f
1 of 4
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10
50
15
45
⎯
⎯
⎯
⎯
ns
ns
ns
ns
V
= 10V, ID = 0.5A,
DD
= 5.0V, R
V
GS
= 50Ω
GEN
August 2011
© Diodes Incorporated
R
C
URRENT
RAIN CUR
REN
T
R
TATIC DRAIN-SOUR
C
NEW PRODUCT
DMN2114SN
5
T = 25°C
A
4
3V, 3.5V, 4V, 5V
3.5
4
V = 10V
DS
3
(A)
3
2.5V
3.0V
(A)
2.5
T = 125°C
A
2
2
AIN
D
I, D
1
0
0 0.5 1 1.5 2 2.5 3
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Character i st ics
0.3
0.25
E,
2.0V
V = 1.5V
GS
1.5
D
I, D
1
0.5
0
0 0.5 1 1.5 2 2.5 3
V , GA TE-SOURC E VOLTAGE (V)
GS
T= 25°C
A
T = -55°C
A
Fig. 2 Typical Transfer Characteristics
1
T = 25°C
J
, S
Ω
0.2
0.15
0.1
ON-RESISTNACE ( )
DS(ON)
0.05
0
0246810
V , GA TE-SOURC E VOLTAGE (V)
GS
I = 0.5A
D
I = 1.0A
D
Fig. 3 On- R esistance vs. Gate Voltage
0.3
Ω
0.25
0.2
RESISTANCE ( )
0.15
V = 2.5V
GS
I = 1.0A
D
I = 0.5A
D
Ω
2.5V
0.1
4.5V
ON-RESISTANCE ( )
DS(ON)
R , STATIC DRAIN-SOURCE,
0.01
01234
I , DRAIN CURRENT (A)
D
Fig. 4 On-R esista nc e vs. Drai n Cur r ent
1.4
V = 10V
1.2
DS
I = 1mA
D
1
0.8
0.6
I = 0.5A, 1A
0.1
D
0.4
V = 4.5V
0.05
0
-50 0 50 100 150
DS(ON)
R , STATIC DRAIN-SOURCE, ON-
Fig. 5 On-Resistance Variation with Temperature
GS
T , AMBIENT TEMPERATURE (°C)
A
0.2
GS(th)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 0 50 100 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 6 Gat e Threshold Voltage vs. Temperatur e
DMN2114SN
Document number: DS30829 Rev. 5 - 2
2 of 4
www.diodes.com
August 2011
© Diodes Incorporated
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