Diodes DMN2112SN User Manual
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Features
• Low On-Resistance
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
• Lead Free By Design/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• "Green" Device (Note 3)
NEW PRODUCT
ESD Protected
Maximum Ratings @T
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage Continuous
Drain Current Continuous
Pulsed
= 25°C unless otherwise specified
A
TOP VIEW
DMN2112SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
• Case: SC59
• Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.014 grams (approximate)
SC59
Gate
Gate
Protection
Diode
EQUIVALENT CIRCUIT
V
DSS
V
GSS
ID
Drain
Source
D
G
TOP VIEW
Pin Out Confi
S
uration
20 V
± 8 V
1.2
4.0
A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
R
Tj, T
= 25°C unless otherwise specified
A
Pd
JA
STG
500 mW
250
-55 to +150
°C /W
°C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ Tj = 25°C I
Gate-Body Leakage
BV
I
DSS
DSS
GSS
20
⎯ ⎯
⎯ ⎯
⎯ ⎯
10 µA
± 10
V
VGS = 0V, ID = 250µA
V
= 20V, VGS = 0V
DS
µA
VGS = ± 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
IYfsI ⎯
V
SD
0.5
⎯ ⎯
⎯
⎯
1.2 V
0.10
0.14
Ω
0.25
4.2
⎯
S
0.8 1.1 V
VDS = 10V, ID = 1.0mA
VGS = 4.5V, ID = 0.5A
VGS = 2.5V, ID = 0.5A
VGS = 1.5V, ID = 0.1A
VDS = 10V, ID =0.5A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
⎯
⎯
⎯
220
120
45
⎯
⎯
⎯
pF
pF
pF
VDS = 10V, V
f = 1.0MHz
GS
= 0V
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes: 1. Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN2112SN
Document number: DS30830 Rev. 5 - 2
t
D(ON
t
D(OFF
tr
tf
www.diodes.com
1 of 4
⎯
⎯
⎯
⎯
10
75
15
65
⎯
⎯
⎯
⎯
ns
ns
ns
ns
V
= 5V, ID = 0.5A,
DD
VGS = 10V, R
= 50Ω
GEN
August 2011
© Diodes Incorporated
R
CUR
RENT
NEW PRODUCT
DMN2112SN
5
3V, 3.5V, 4V
T =25°C
A
V =10V
DS
4
2.5V
(A)
2.0V
3
T = 125°C
A
2
AIN
D
I, D
1
0
0 0.5 1 1.5 2 2.5 3
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typica l O ut put Chara ct er istics
I = 0.5A
D
I = 1.0A
D
1.5V
V= 1.0
GS
T = 25°C
A
T = -55°C
A
T = 25°C
J
V = 1.5V
GS
V = 1.5V
GS
V = 2.5V
GS
I = 0.5A
D
I = 0.5A, 1A
D
I = 0.5A, 1A
D
I = 0.1A
D
V = 2.5V
GS
V = 10V
DS
I = 1mA
D
V = 4.5V
GS
V = 4.5V
GS
DMN2112SN
Document number: DS30830 Rev. 5 - 2
2 of 4
www.diodes.com
August 2011
© Diodes Incorporated
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