Diodes DMN2100UDM User Manual

Product Summary

V

R

(BR)DSS

20V

130m @ VGS = 1.5V

max

DS(ON)

55mΩ @ V
70m @ VGS = 2.5V
90m @ VGS = 1.8V

= 4.5V

GS

TA = 25°C

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

NEW PRODUCT

• General Purpose Interfacing Switch

• Power Management Functions

) and yet maintain superior switching

DS(on)

ESD PROTECTED

I

D

4.0A

3.5A

3.1A

2.5A

max

SOT26

Top View

DMN2100UDM

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

D

D

D

Top View

Internal Schematic

S

D

G

Ordering Information (Note 4)

Part Number Case Packaging

DMN2100UDM-7 SOT26 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com..

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2100UDM

Document number: DS31186 Rev. 5 - 2

2N1

YM

www.diodes.com

2N1 = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)

1 of 6

May 2012

© Diodes Incorporated

θ

)

g

g

g

)

r

)

DMN2100UDM

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current

Steady

State
t<10s

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

DM

I

S

20 V
±8 V

4.0

3.1

4.5

3.5

A

A

13 A

1.5 A

Thermal Characteristics @T

NEW PRODUCT

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

T

= 25°C

A

TA = 70°C

Steady state

t<10s 91

T

= 25°C

A

TA = 70°C

Steady state

t<10s 63

P

R

P

R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

1

0.6

127

1.5

0.9

W

°C/W

W

85

°C/W

3.1

-55 to +150 °C

= 25°C unless otherwise specified

A

BV

I

I

DSS
DSS
GSS

20

⎯ ⎯
⎯ ⎯
⎯ ⎯

1

±1 μA

V

VGS = 0V, ID = 250μA

μA

VDS = 20V, VGS = 0V
V

= ±8V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.6

⎯
⎯
⎯
⎯

| ⎯

⎯

1.0 V

⎯

32 55

43 70

56 90

mΩ

80 130

8

⎯

S

0.7 1.1 V

VDS = VGS, ID = 250μA

= 4.5V, ID = 6A

V

GS

VGS = 2.5V, ID = 4.0A
VGS = 1.8V, ID = 1.5A
VGS = 1.5V, ID = 1.0A
VDS =10V, ID = 6A
VGS = 0V, IS = 2A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

C

⎯

iss

C

⎯

oss

C

⎯

rss

Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

⎯

⎯

⎯

⎯

⎯

⎯

⎯

555
112

84

8.8

1.4
3

53

78
561
234

⎯
⎯
⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

pF
pF
pF
nC
nC
nC

ns
ns
ns
ns

V

= 10V, VGS = 0V

DS

f = 1.0MHz

V

= 10V, VGS = 4.5V,

DS

I

= 6.5A

D

V

= 10V, ID = 1.0A

DS

= 4.5V, RG = 6

V

GS

DMN2100UDM

Document number: DS31186 Rev. 5 - 2

2 of 6

www.diodes.com

May 2012

© Diodes Incorporated