Diodes DMN2075UDW User Manual

Product Summary

(BR)DSS

20V

R

48mΩ @ V 59mΩ @ VGS = 2.5V

DS(on) max

V

= 4.5V

GS

Description and Applications

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

• DC-DC Converters

NEW PRODUCT

• Power management functions

) and yet maintain superior switching

DS(on)

Top View

SOT363

I

D

TA = 25°C

2.8A

2.6A

DMN2075UDW

N-CHANNEL ENHANCEMENT MODE MOSFET

Benefit and Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.

Solderable per MIL-STD-202, Method 208

• Terminals Connections: See Diagram Below

• Weight: 0.006 grams (approximate)

D

Top View

S

G

Ordering Information (Note 3)

Part Number Case Packaging

DMN2075UDW-7 SOT363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

G22

G22 = Product Type Marking Code YM = Date Code Marking

YM

Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)

DMN2075UDW

Document number: DS35542 Rev. 1 - 2

1 of 6

www.diodes.com

September 2011

θ

)

g

r

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 2.5V

Pulsed Drain Current (10μs pulse, Duty cycle = 1%) Maximum Continuous Body Diode Current

NEW PRODUCT

Thermal Characteristics

Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

DMN2075UDW

V

DSS

V

GSS

T

Steady

State

t<5s

Steady

State

t<5s

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

P

Steady state

t<5s 213 °C/W

Steady state

t<5s 183 °C/W

R

P R R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

20 V

±8V V

2.8

2.2

3.1

2.5

2.6

2.1

2.8

2.2

A

20 A

1.0 A

0.5 W 257 °C/W

0.58 W 221 °C/W

65 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 - - V

- - 1.0

- - ±100 nA

VGS = 0V, ID = 250μA

μA

= 20V, VGS = 0V

V

DS

VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

fs

SD

0.4 - 1.0 V

- 40 48

- 45 59

- 51 70

- 68 100

|

- 13 - S

- 0.75 1.0 V

VDS = VGS, ID = 250μA

= 4.5V, ID = 3A

V

GS

V

= 2.5V, ID = 2A

mΩ

GS

V

= 1.8V, ID = 1A

GS

V

= 1.5V, ID = 1A

GS

VDS = 5V, ID = 3A

VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance

Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Guaranteed by design. Not subject to production testing.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

6. Short duration pulse test used to minimize self-heating effect

DMN2075UDW

Document number: DS35542 Rev. 1 - 2

C

iss

C

oss

C

rss

R Q

Q

s

Q

d

t

D(on)

t

D(off)

t

f

www.diodes.com

-

594.3

-

64.5

-

57.7

-

1.5

-

7.0

-

0.9

-

1.4

- 7.4 - ns

- 9.8 - ns

- 28.1 - ns

- 6.7 - ns

2 of 6

-

pF

V

= 10V, VGS = 0V,

pF pF

Ω nC nC nC

DS

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 10V,

V

GS

I

= 3.6A

D

V

= 10V, VGS = 4.5V,

DD

= 2.78Ω, RG = 1.0Ω

R

L

September 2011

RAIN CUR

REN

T

R

CUR

R

T

R,DR

OUR

ON-R

R

OUR

ON-R

R

OUR

C

R

OUR

CE ON-R

TANC

NEW PRODUCT

10

8

(A)

6

V = 8.0VGS

V = 3.0VGS

V = 2.5VGS

V = 2.0VGS

V = 1.8VGS

V = 1.5VGS

4

D

I, D

2

V = 1.2VGS

0

0 0.5 1.0 1.5 2.0 2.5 3.0

V , DRAIN -SOURCE VOLTAGE(V)

DS

Fig. 1 Typical Output Characteristics

0.10

Ω

0.09

0.08

ESISTANCE( )

0.07

5

V = 5.0VDS

4

(A)

3

EN

2

AIN

D

I, D

1

0

0 0.5 1.0 1.5 2.0

V , GATE- SOURCE VOLTAG E ( V)

GS

T = 150C

A

T = 125C

°

A

Fig. 2 Typical Transfer Characteristics

0.08

Ω

0.07

V = 4.5V

GS

0.06

ESISTANCE( )

0.05

0.06

0.04

CE

0.03

AIN-S

0.02

, D

0.01

DS(ON)

0

0123 45

I , DRAIN SOURCE CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Curr ent and Temperature

0.08

Ω

E ( )

0.07

0.06

ESIS

0.05

E

CE

0.05

0.04

AIN-S

0.03

0.02

DS(ON)

0.01 02 46810

I , DRAIN SOURCE CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Curr ent and Gat e Voltage

1.8

1.6

1.4

DMN2075UDW

°

T = 85C

A

T = 25C

°

A

T = -55C

°

A

T = 150 C

A

T = 125 C

A

T = 85C

A

T = 25C

A

T = -55C

A

2

V=.5V

GS

1

I=A

D

°

V = 4.5V

1.2

AIN-S , D

1.0

DS(ON)

ON-RESISTANCE (Normalized)

0.8

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 5 On-Resistance Variation with Temperature

0.04

0.03

AIN-S

0.02

, D

0.01

DS(ON)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

GS

I=A

5

D

°

DMN2075UDW

Document number: DS35542 Rev. 1 - 2

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September 2011

GATE THRESH

O

OLTAG

OUR

C

URR

N

T

C

UNC

TIO

N CAPACITAN

C

F

GE CUR

RENT

RAIN CUR

R

N

T

NEW PRODUCT

DMN2075UDW

1.4

1.2

E(V)

5

4

1.0

LD V

0.8

0.6

0.4

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gat e Threshol d Variation vs. Ambient Temperature

(A) E

3

E

2

S

I, S

1

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

1,000

)

E (p

C

iss

T = 150°C

A

(nA)

T = 125°C

A

100

C

oss

C

rss

, J

T

f = 1MHz

10

048121620

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Junction C apacitance

100

P = 10sWµ

10

R

DS(on)

Limited

(A) E

DC

1

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

D

I, D

0.1

W

P = 1ms

W

P = 100µs

W

T = 85°C

A

T = 25°C

A

DSS

I , LEAKA

T = -55°C

A

02468101214161820

V , DRAIN-SOURCE VOLTAGE(V)

DS

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

0.01

0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 11 SOA, Safe Operation Area

DMN2075UDW

Document number: DS35542 Rev. 1 - 2

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September 2011

T

R

T T

HER

R

TANC

1

D = 0.7

E

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Puls e

NEW PRODUCT

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Package Outline Dimensions

K

J

Suggested Pad Layout

Z

DMN2075UDW

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 225°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)

Fig. 12 Transient Ther m al Resist ance

A

SOT363

Dim Min Max

B C

A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ

H

F 0.40 0.45 H 1.80 2.20 J 0 0.10

M

K 0.90 1.00 L 0.25 0.40

D

L

F

M 0.10 0.22

α

0° 8°

All Dimensions in mm

C2

Dimensions Value (in mm)

Z 2.5

G

C1

G 1.3

X 0.42 Y 0.6

Y

X

C1 1.9 C2 0.65

DMN2075UDW

Document number: DS35542 Rev. 1 - 2

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September 2011

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

NEW PRODUCT

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN2075UDW

Document number: DS35542 Rev. 1 - 2

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September 2011