Diodes DMN2075UDW User Manual

Product Summary

(BR)DSS

20V

R

48mΩ @ V
59mΩ @ VGS = 2.5V

DS(on) max

V

= 4.5V

GS

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• DC-DC Converters

NEW PRODUCT

• Power management functions

) and yet maintain superior switching

DS(on)

Top View

SOT363

I

D

TA = 25°C

2.8A

2.6A

DMN2075UDW

N-CHANNEL ENHANCEMENT MODE MOSFET

Benefit and Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.

Solderable per MIL-STD-202, Method 208

• Terminals Connections: See Diagram Below

• Weight: 0.006 grams (approximate)

D

D

D

D

Top View

S

G

Ordering Information (Note 3)

Part Number Case Packaging

DMN2075UDW-7 SOT363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

G22

G22 = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

DMN2075UDW

Document number: DS35542 Rev. 1 - 2

1 of 6

www.diodes.com

September 2011

© Diodes Incorporated

θ

)

g

g

g

g

r

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 2.5V

Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
Maximum Continuous Body Diode Current

NEW PRODUCT

Thermal Characteristics

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

DMN2075UDW

V

DSS

V

GSS

T

Steady

State

t<5s

Steady

State

t<5s

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

P

Steady state

t<5s 213 °C/W

Steady state

t<5s 183 °C/W

R

P
R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

20 V

±8V V

2.8

2.2

3.1

2.5

2.6

2.1

2.8

2.2

A

A

A

A

20 A

1.0 A

0.5 W
257 °C/W

0.58 W
221 °C/W

65 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 - - V

- - 1.0

- - ±100 nA

VGS = 0V, ID = 250μA

μA

= 20V, VGS = 0V

V

DS

VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.4 - 1.0 V

- 40 48

- 45 59

- 51 70

- 68 100

|

- 13 - S

- 0.75 1.0 V

VDS = VGS, ID = 250μA

= 4.5V, ID = 3A

V

GS

V

= 2.5V, ID = 2A

mΩ

GS

V

= 1.8V, ID = 1A

GS

V

= 1.5V, ID = 1A

GS

VDS = 5V, ID = 3A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Guaranteed by design. Not subject to production testing.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

6. Short duration pulse test used to minimize self-heating effect

DMN2075UDW

Document number: DS35542 Rev. 1 - 2

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

www.diodes.com

-

594.3

-

64.5

-

57.7

-

1.5

-

7.0

-

0.9

-

1.4

- 7.4 - ns

- 9.8 - ns

- 28.1 - ns

- 6.7 - ns

2 of 6

-

-

-

-

-

-

-

pF

V

= 10V, VGS = 0V,

pF
pF

Ω
nC
nC
nC

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 10V,

V

GS

I

= 3.6A

D

V

= 10V, VGS = 4.5V,

DD

= 2.78Ω, RG = 1.0Ω

R

L

September 2011

© Diodes Incorporated