Diodes DMN2075U User Manual
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
TOP VIEW
Gate
Internal Schematic TOP VIEW
DMN2075U
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Drain
D
Source
G
S
Ordering Information (Note 4)
Part Number Case Packaging
DMN2075U-7 SOT-23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Chengdu A/T Site
DMN2075U
Document number: DS31837 Rev. 4 - 2
G22
Shanghai A/T Site
YM
www.diodes.com
G22 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
1 of 6
October 2013
© Diodes Incorporated
)
g
g
g
g
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
= +25°C
Continuous Drain Current (Note 5)
Steady
State
T
A
T
= +70°C
A
Pulsed Drain Current (Note 6)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C R
Operating and Storage Temperature Range
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
V
V
I
P
T
J, TSTG
DSS
GSS
I
D
DM
D
JA
DMN2075U
20 V
±8 V
4.2
3.4
A
27 A
0.8 W
156 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
20 — — V
— — 1.0 A
— — ±100 nA
VGS = 0V, ID = 250A
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.4 — 1.0 V
—
— 13 — S
|
— 0.75 1.0 V
25
30
38
45
VDS = VGS, ID = 250A
= 4.5V, ID = 3.6A
V
m
GS
VGS = 2.5V, ID = 3.1A
VDS = 5V, ID = 3.6A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2075U
Document number: DS31837 Rev. 4 - 2
C
iss
C
oss
C
rss
R
Q
Q
s
Q
d
t
D(on)
t
t
D(off)
t
f
www.diodes.com
— 594.3 — pF
— 64.5 — pF
— 57.7 — pF
— 1.5 —
— 7.0 — nC
— 0.9 — nC
— 1.4 — nC
— 7.4 — ns
— 9.8 — ns
— 28.1 — ns
— 6.7 — ns
2 of 6
V
= 10V, VGS = 0V,
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= 4.5V, VDS = 10V,
GS
= 3.6A
I
D
V
= 10V, VGS = 4.5V,
DD
= 2.78, RG = 1.0
R
L
October 2013
© Diodes Incorporated
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