Diodes DMN2065UW User Manual

NEW PRODUCT

Product Summary

I

max

D

V

R

(BR)DSS

56m @ V

20V

65m @ VGS = 2.5V
93m @ VGS = 1.8V

140m @ VGS = 1.5V

DS(ON)

max

= 4.5V

GS

TA = 25°C

2.8A

2.6A

2.2A

1.8A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• General Purpose Interfacing Switch

• Power Management Functions

• DC-DC Converters

• Analog Switch

SOT323

Top View

Gate

Equivalent Circuit Top View

DMN2065UW

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT323

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.027 grams (approximate)

Drain

D

G

Source

S

Ordering Information (Note 3)

Part Number Case Packaging

DMN2065UW-7 SOT323 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2065UW

Document number: DS35554 Rev. 1 – 2

DMH

www.diodes.com

DMH = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

October 2011

© Diodes Incorporated

)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 1.8V

Pulsed Drain Current (10us pulse, duty cycle=1%)
Maximum Body Diode Forward Current (Note 4)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

Steady

State

t<10s

Steady

State

t<10s

DMN2065UW

V

DSS

V

GSS

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

Steady state

t<10s 252 °C/W

Steady state

t<10s 151 °C/W

I

I

I

I

I

DM

I

D

D

D

D

S

R

R

T

J, TSTG

P

D

JA

θ

P

D

JA

θ

20 V

±12 V

2.8

2.3

3.1

2.6

2.2

1.7

2.4

1.9

A

A

A

A

30 A

1.2 A

0.43 W
296 °C/W

0.7 W

178 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

20 - - V

- - 1 A

- - ±1 A

VGS = 0V, ID = 1mA
VDS = 20V, VGS = 0V

VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.35 - 1.0 V

- 52 56

- 59 65

- 60 93

- 75 140

|

- 7 - S

- 0.7 1.0 V

VDS = VGS, ID = 250A

= 4.5V, ID = 2A

V

GS

V

= 2.5V, ID = 2A

mΩ

GS

= 1.8V, ID = 1A

V

GS

= 1.5V, ID = 0.5A

V

GS

VDS = 5V, ID = 3.8A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C
C

t

t

C

oss
rss

Q
Q
Q

D(on

t

D(off

t

iss

s
d

f

- 400.0 - pF

- 73.8 - pF

- 65.6 - pF

- 5.4 - nC

- 0.7 - nC

- 1.4 - nC

- 3.5 - ns

- 9.7 - ns

- 23.8 - ns

- 7.2 - ns

V

= 10V, VGS = 0V,

DS

f = 1.0MHz
V

= 4.5V, VDS = 10V,

GS

I

= 6A

D

V

= 10V, VGS = 5V,

DD

= 1.7, RG = 6,

R

L

DMN2065UW

Document number: DS35554 Rev. 1 – 2

2 of 6

www.diodes.com

October 2011

© Diodes Incorporated