Diodes DMN2065UW User Manual

NEW PRODUCT

Product Summary

I

max

D

V

R

(BR)DSS

56m @ V

20V

65m @ VGS = 2.5V 93m @ VGS = 1.8V

140m @ VGS = 1.5V

DS(ON)

max

= 4.5V

GS

TA = 25°C

2.8A

2.6A

2.2A

1.8A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• General Purpose Interfacing Switch

• Power Management Functions

• DC-DC Converters

• Analog Switch

SOT323

Top View

Gate

Equivalent Circuit Top View

DMN2065UW

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT323

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.027 grams (approximate)

Drain

D

G

Source

S

Ordering Information (Note 3)

Part Number Case Packaging

DMN2065UW-7 SOT323 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2065UW

Document number: DS35554 Rev. 1 – 2

DMH

www.diodes.com

DMH = Product Type Marking Code YM = Date Code Marking

YM

Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)

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October 2011

)

g

)

r

)

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 1.8V

Pulsed Drain Current (10us pulse, duty cycle=1%) Maximum Body Diode Forward Current (Note 4)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range

Steady

State

t<10s

Steady

State

t<10s

DMN2065UW

V

DSS

V

GSS

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

Steady state

t<10s 252 °C/W

Steady state

t<10s 151 °C/W

I

DM

I

D

S

R

T

J, TSTG

P

D

JA

θ

P

D

JA

θ

20 V

±12 V

2.8

2.3

3.1

2.6

2.2

1.7

2.4

1.9

A

30 A

1.2 A

0.43 W 296 °C/W

0.7 W

178 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @Tc = 25°C I Gate-Source Leakage

BV

I

DSS DSS GSS

20 - - V

- - 1 A

- - ±1 A

VGS = 0V, ID = 1mA VDS = 20V, VGS = 0V

VGS = ±10V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

fs

SD

0.35 - 1.0 V

- 52 56

- 59 65

- 60 93

- 75 140

|

- 7 - S

- 0.7 1.0 V

VDS = VGS, ID = 250A

= 4.5V, ID = 2A

V

GS

V

= 2.5V, ID = 2A

mΩ

GS

= 1.8V, ID = 1A

V

GS

= 1.5V, ID = 0.5A

V

GS

VDS = 5V, ID = 3.8A

VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C C

t

C

oss rss

Q Q Q

D(on

t

D(off

t

iss

s d

f

- 400.0 - pF

- 73.8 - pF

- 65.6 - pF

- 5.4 - nC

- 0.7 - nC

- 1.4 - nC

- 3.5 - ns

- 9.7 - ns

- 23.8 - ns

- 7.2 - ns

V

= 10V, VGS = 0V,

DS

f = 1.0MHz V

= 4.5V, VDS = 10V,

GS

I

= 6A

D

V

= 10V, VGS = 5V,

DD

= 1.7, RG = 6,

R

L

DMN2065UW

Document number: DS35554 Rev. 1 – 2

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October 2011

R

C

URRENT

R

C

U

R

T

R,DR

OUR

CE ON-R

TANC

R

OUR

ON-R

R

RAIN

OUR

C

R

OUR

CE ON-R

C

NEW PRODUCT

DMN2065UW

10

(A)

AIN

D

I, D

8

6

4

V = 8.0VGS

V = 4.5VGS

V = 3.0VGS

V = 2.5VGS

V = 2.0VGS

V = 1.5VGS

2

V = 1.2VGS

0

0 0.5 1.0 1.5 2.0 2.5 3.0

V , DRAIN -SOURCE VOLTAGE( V )

DS

Fig. 1 Typical Output Ch ar acteristics

0.14

Ω

E( )

0.12

5

V = 5.0VDS

4

(A) EN

3

2

AIN

T = 150 C

°

D

I, D

1

0

0 0.5 1.0 1.5 2.0

A

T = 125 C

°

A

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85C

A

T = 25C

A

T = -55C

°

A

°

Fig. 2 T ypical Transfer Characteristics

0.08

Ω

0.07

V= 4.5V

GS

°

0.10

ESIS

0.08

0.06

0.04

AIN-S

ESISTANCE( )

CE

AIN-S

0.06

0.05

0.04

0.03

0.02

T = 150C

A

T = 125C

A

T = 85C

°

A

T = 25C

°

A

T = -55C

°

A

°

, D

0.02

DS(ON)

0

12345678

I , DRAIN SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance vs.

Drain Curr ent and Gate V ol tage

1.8

0.01

DS(ON)

0

012 345

I , DRAIN SOURCE CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Curr ent and Temperature

0.08

Ω

E ( )

0.07

1.6

ESISTAN

AIN-S , D

0.06

0.05

0.04

0.03

0.02

V=.5V

2

GS

I=A

5

D

V= 4.5V

GS

I= A

10

D

E

-S

, D

1.4

1.2

1.0

DS(ON)

ON-RESISTA NCE (Normalized)

0.8

0.01

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 5 On- Resistance Variation with Temperatur e

DS(ON)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

°

DMN2065UW

Document number: DS35554 Rev. 1 – 2

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October 2011

GATE THRESH

O

OLT

G

OUR

CE CUR

RENT

C

UNC

TIO

N CAPACITAN

C

F

GE CUR

RENT

GAT

OUR

C

OLT

G

R

CUR

RENT

NEW PRODUCT

DMN2065UW

1.4

1.2

E(V) A

1.0

LD V

0.8

0.6

0.4

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

1,000

5

4

(A)

3

2

S

I, S

1

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Dio de Forward Voltage vs . Cur r ent

100

T =150°C

A

)

C

E (p

iss

10

(nA)

T =125°C

A

1

T =85°C

100

C

oss

A

0.1

C

rss

0.01

, J

T

f = 1MHz

10

048121620

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Junction Ca pacitance

10

f = 1MHz

9 8

E (V) A

7 6

E V

5 4

E-S

3 2

GS

V,

1 0

0 3 6 9 12 15

Q , TOT AL GATE CHARGE (nC)

g

Fig. 11 Gate-Charge Characte r istics

DSS

I , LEAKA

0.001 0246 8101214161820

V , DRAIN-SOURCE VOLTAGE(V)

DS

T = 25°C

A

T = -55°C

A

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

100

R

DS(on)

Limited

10

(A)

DC

1

P = 10s

W

P = 1s

AIN

D

I, D

0.01

0.1

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

P = 10µs

W

0.1 1 10 100

V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 12 SOA, Safe Operation Area

DMN2065UW

Document number: DS35554 Rev. 1 – 2

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October 2011

T

R

T T

HER

R

TANC

NEW PRODUCT

1

D = 0.7

E

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Package Outline Dimensions

A

G H

K

J

D

Suggested Pad Layout

DMN2065UW

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 300°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)

Fig. 13 Transient Therm al Resist ance

C

B

A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D - - 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15

Dim Min Max Typ

M

J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30

L

M 0.10 0.18 0.11

α

SOT323

0° 8° -

All Dimensions in mm

Y

Z

C

Dimensions Value (in mm)

Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0

X

DMN2065UW

Document number: DS35554 Rev. 1 – 2

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October 2011

NEW PRODUCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMN2065UW

Document number: DS35554 Rev. 1 – 2

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Diodes DMN2065UW User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual