Diodes DMN2050LFDB User Manual

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Page 1

Product Summary

max

(BR)DSS

20V

45m @ V

55m @ VGS = 2.5V

DS(ON)

max

= 4.5V

TA = +25°C

4.5A

4.1A

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 Battery Charging  Power Management Functions  DC-DC Converters  Portable Power Adaptors

Pin1

Bottom View

DMN2050LFDB

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-DFN2020-6 Type B  Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.0065 grams (approximate)

Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging

DMN2050LFDB -7 DFN2020-6 Type B 3,000/Tape & Reel

DMN2050LFDB -13 DFN2020-6 Type B 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2050LFDB

Document number: DS36473 Rev. 2 - 2

M5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

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Page 2

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

Steady

State

Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH

Thermal Characteristics

Characteristic Symbol

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

= +25°C

= +70°C

= +25°C

= +70°C

DMN2050LFDB

DSS

GSS

= +25°C

TA = +70°C

Steady state

t<10s 110

= +25°C

TA = +70°C

Steady state

t<10s 57

J, TSTG



JA

JC

20 V

±12 V

3.3

2.6

4.5

3.6

1 A

25 A

9 A

4.5 mJ

alue Units

0.73

0.46 173

1.42

0.90

-55 to +150 °C

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage

DSS

GSS

DSS

– – – –

–

– V

1.0 A

±100 nA

VGS = 0V, ID = 250A VDS = 16V, VGS = 0V

VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

GS(th

DS (ON)

|Y V

0.4 – 1.0 V – –

– –

28 45 36 55

9 – S

0.75 1.0 V

VDS = VGS, ID = 250A

= 4.5V, ID = 5.0A

m

= 2.5V, ID = 4.2A

VDS = 5V, ID = 5A

VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

iss

oss

rss

R Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

7. I

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN2050LFDB

Document number: DS36473 Rev. 2 - 2

D(on)

D(off)

www.diodes.com

– 389 – – 72 – – 63 – – 2.1 – – 5.7 – – 12 – – 0.7 – – 1.5 – – 5 – – 8 – – 25 – – 8 – –

8.5

– 2.1

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pF pF pF



= 10V, VGS = 0V,

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz nC nC

= 15V, ID = 5.8A

nC ns ns

= 10V, VGS = 4.5V,

= 6, I

= 1A

– –

ns nC

= 5A, di/dt = 100A/s

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CUR

REN

CUR

RENT

OUR

ON-R

R, D

RAIN-SOUR

CE O

N-R

TAN

RAIN-SOUR

30.0

V= 10V

V= 2.5V

25.0

(A)

20.0

15.0

V= 3.5V

V= 3.0V

V= 2.0V

10.0

V= 1.5V

(A)

AIN

I, D

V= 5.0V

T = 150°C

T = 125°C

5.0

V= 1.2V

0.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

0.1



T = -55°C

0 0.5 1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

0.15



DMN2050LFDB

T = 85°C

T = 25°C

E ( )

ESISTANCE ( )

0.08

V = 1.8VGS

0.06

ESIS

0.12

0.09

I= 5.0A

0.04

AIN-S

0.02

, D

DS(ON)

0 2 4 6 8 101214 161820

I , DRAIN-SOURCE CURRENT (A)

V = 2.5VGS

V = 4.5VGS

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage



0.06

V = 4.5VGS

0.05

T = 150°C

0.04

N-RESISTANCE ( )

T = 125°C

T = 85°C

0.03

T = 25°C

URCE

0.02

T = -55°C

0.01

DS(ON)

R, DRAIN-S

0.00 0 2 4 6 8 10 12 14 16 18 20

I , DRAIN CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

0.06

I= 4.2A

0.03

DS(ON)

024681012

V , GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristics

1.8

V=V

1.6

1.4

1.2

I = 5.0A

V=V

I= 10A

0.8

0.6

DS(ON)

0.4

ON-RESISTANCE (NORMALIZED)

0.2

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature



DMN2050LFDB

Document number: DS36473 Rev. 2 - 2

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N-SOUR

CE O

TAN

OUR

CE CUR

REN

CUR

RENT

TANC

0.06

DMN2050LFDB



E ( )

ESIS

0.05

0.04

V=5V

I = 5.0A

0.8

0.6

I = 250µA

I= 1mA

0.03

V=V

I = 10A

0.4

0.02

0.01

, D

DS(ON)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variati on with Temperature



0.2

GS(th)

V , GATE THRESHOLD VOLTAGE (V)

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)



Figure 8 Gate Threshold Variation vs. Ambient Temperature

100

DS(on)

Limited

P = 100 sWµ

(A)

T = 150°C

T = 125°C

T= 85°C

T= 25°C

T= -55°C

I, S

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forwar d Voltage vs. Current

D = 0.9 D = 0.7

D = 0.5

D = 0.3

(A)

P = 10s

P = 1s

AIN

0.1

T = 150°C

-I , D

J(max)

T = 25°C

V = 4.5V

Single Pulse DUT on 1 * MRP Board

0.01

P = 100ms

P = 10ms

P = 1ms

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 SOA, Safe Operation Area

ESIS

0.1

D = 0.1

D = 0.05

MAL E

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

D = Single Pulse

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R (t) = r(t) * R



JA JA

R = 183°C/W



Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIME (sec)

Figure 11 Transient Thermal Resistance

DMN2050LFDB

Document number: DS36473 Rev. 2 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Pin#1 ID

SEATING PLANE

Dim Min Max Typ

A 0.545 0.605 0.575

A1 0 0.05 0.02 A3

b 0.20 0.30 0.25

D 1.95 2.075 2.00

D2 0.50 0.70 0.60

E 1.95 2.075 2.00

E2 0.90 1.10 1.00

L 0.25 0.35 0.30

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

Z 1.67

G 0.20

G1 0.40

X1 1.0 X2 0.45

Y 0.37

Y1 0.70

C 0.65

DFN2020-6 Type B

 

DMN2050LFDB

0.13

0.45

0.65

0.15

0.225

DMN2050LFDB

Document number: DS36473 Rev. 2 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMN2050LFDB

Document number: DS36473 Rev. 2 - 2

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