Diodes DMN2050LFDB User Manual
Product Summary
max
I
D
V
(BR)DSS
20V
R
45m @ V
55m @ VGS = 2.5V
DS(ON)
max
= 4.5V
GS
TA = +25°C
4.5A
4.1A
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Applications
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
D2
Pin1
G1
S1
Bottom View
D2
S2
G2
D1
D1
DMN2050LFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
G1
D1
S1
Internal Schematic
G
2
D2
S2
Ordering Information (Note 4)
Part Number Case Packaging
DMN2050LFDB -7 DFN2020-6 Type B 3,000/Tape & Reel
DMN2050LFDB -13 DFN2020-6 Type B 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
M5
DMN2050LFDB
Document number: DS36473 Rev. 2 - 2
M5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
V
)
g
g
g
r
r
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
Thermal Characteristics
Characteristic Symbol
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
DMN2050LFDB
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AR
E
AR
= +25°C
T
A
TA = +70°C
Steady state
t<10s 110
= +25°C
T
A
TA = +70°C
Steady state
t<10s 57
P
R
P
R
R
T
J, TSTG
JA
JC
D
JA
D
20 V
±12 V
3.3
2.6
4.5
3.6
A
A
1 A
25 A
9 A
4.5 mJ
alue Units
0.73
0.46
173
1.42
0.90
89
18
-55 to +150 °C
W
°C/W
W
°C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
20
– –
– –
–
– V
1.0 A
±100 nA
VGS = 0V, ID = 250A
VDS = 16V, VGS = 0V
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.4 – 1.0 V
–
–
|
–
–
28 45
36 55
9 – S
0.75 1.0 V
VDS = VGS, ID = 250A
= 4.5V, ID = 5.0A
V
m
GS
= 2.5V, ID = 4.2A
V
GS
VDS = 5V, ID = 5A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
7. I
AR
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN2050LFDB
Document number: DS36473 Rev. 2 - 2
Q
s
Q
d
t
D(on)
t
t
D(off)
t
f
t
r
Q
r
www.diodes.com
– 389 –
– 72 –
– 63 –
– 2.1 –
– 5.7 –
– 12 –
– 0.7 –
– 1.5 –
– 5 –
– 8 –
– 25 –
– 8 –
–
8.5
– 2.1
2 of 6
pF
pF
pF
= 10V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
V
= 15V, ID = 5.8A
nC
DS
nC
ns
ns
V
= 10V, VGS = 4.5V,
DS
R
ns
= 6, I
G
DS
= 1A
ns
–
–
ns
nC
= 5A, di/dt = 100A/s
I
F
September 2013
© Diodes Incorporated
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