Diodes DMN2050L User Manual

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Page 1

Features

 Low On-Resistance

 29m @V

 50m @V

 100m @V

 Very Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

= 4.5V

= 2.5V

= 2.0V

Top View

DMN2050L

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D

 Terminal Connections: See Diagram

 Terminals: Finish  Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

SOT23

Drain

Gate

Source

Equivalent Circuit

Top View

Ordering Information (Note 4)

Part Number Case Packaging

DMN2050L-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MN3

Chengdu A/T Site

DMN2050L

Document number: DS31502 Rev. 4 - 2

MN3

Shanghai A/T Site

MN3 = Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: A = 2013)

M = Month (ex: 9 = September)

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October 2013

Page 2

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 5)

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage (Note 7)

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Notes: 5. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN2050L

Document number: DS31502 Rev. 4 - 2

DSS

 

DSS

 

GSS



| 





0.45

DS(ON)

GS(th)

iss

oss

rss

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



= 90°C/W.

θJA

2 of 6

DSS

GSS

θJA

TJ, T

STG

 

-55 to +150 °C

1 µA

m



24 42 68

100

1.4 V

29 50

100



0.9 1.4 V

532

144

117

1.3

6.7

0.8

3.0



 



DMN2050L

20 V

±12 V

5.9 A

21 A

1.4 W

90 °C/W

VGS = 0V, ID = 250µA

VDS = 20V, VGS = 0V

VGS = 12V, VDS = 0V

VDS = VGS, ID = 250µA

= 4.5V, ID = 5.0A

VGS = 2.5V, ID = 3.1A

VGS = 2.0V, ID = 1.5A

VDS =5V, ID = 2.1A

VGS = 0V, IS = 2.0A

= 10V, VGS = 0V

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

VDS = 10V, VGS = 4.5V, ID = 5.0A

October 2013

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CUR

RAIN CUR

REN

RAIN-SOUR

CE O

N-R

TAN

RAIN-SO

NEW PRODUCT

T = 85°C

DMN2050L

V = 10V

V = 4.5V

V = 3.0V

V = 2.5V

(A)

V = 2.0V

AIN

I, D

V = 1.5V

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristic

V = 5V

(A)

I, D

0 0.5 1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic

T = 150°C

T = 125°C

T = 25°C

T = -55°C

0.08



0.07

0.06

0.05

V = 2.5V

0.04

V = 4.5V

0.03

0.02

V = 10V

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE (m )

04 8121620

I , DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.6

0.06



E ( )

ESIS

0.04

0.02

V = 4.5V

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

, D

DS(ON)

048121620

I , DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

1.6

1.4

1.2

1.0

0.8

0.6

I = 250µA

I = 1mA

, D

V = 10V

1.4

1.2

I = 10A

V = 4.5V

I = 5A

1.0

DSON

0.4

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

Fig. 5 On-Resistance Variation with Temperature

DMN2050L

Document number: DS31502 Rev. 4 - 2

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0.2

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

October 2013

Page 4

OUR

CE CUR

RENT

C, CAPACIT

T T

HER

TANC

NEW PRODUCT

DMN2050L

T = 25°C

(A)

1,000

)

E (p

100

iss

oss

rss

I, S

0 0.2 0.4 0.6 0.8 1 1.2

V , SOURCE-DRAIN VOLTAGE (V)

Fig. 7 Diode Forward Voltage vs. Current

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 8 Typical Total Capacitance

D = 0.7

D = 0.5

D = 0.3

ESIS

0.1

MAL

D = 0.1

D = 0.9

D = 0.05

R (t) = r(t) * R



JA JA

R = 88°C/W



P(pk)

T - T = P * R (t)

JA JA12

Duty Cycle, D = t /t

ANSIEN

r(t),

0.01

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

t , PULSE DURATION TIME (s)

Fig. 9 Transient Thermal Response

DMN2050L

Document number: DS31502 Rev. 4 - 2

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Page 5

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

NEW PRODUCT

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

DMN2050L

Document number: DS31502 Rev. 4 - 2

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Dim Min Max Typ

A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55 M 0.085 0.18 0.11



Dimensions Value (in mm)

Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35

SOT23

0° 8° -

All Dimensions in mm

DMN2050L

October 2013

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

NEW PRODUCT

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN2050L

Document number: DS31502 Rev. 4 - 2

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October 2013