Diodes DMN2050L User Manual
Features
Low On-Resistance
29m @V
50m @V
100m @V
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
= 4.5V
GS
= 2.5V
GS
GS
= 2.0V
Top View
DMN2050L
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
SOT23
Drain
Gate
Source
Equivalent Circuit
G
D
Top View
S
e3
Ordering Information (Note 4)
Part Number Case Packaging
DMN2050L-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
MN3
Chengdu A/T Site
DMN2050L
Document number: DS31502 Rev. 4 - 2
YM
MN3
Shanghai A/T Site
MN3 = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
NEW PRODUCT
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Notes: 5. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2050L
Document number: DS31502 Rev. 4 - 2
BV
DSS
I
DSS
I
GSS
|
fs
G
g
gs
0.45
V
R
DS(ON)
|Y
V
C
C
GS(th)
SD
C
iss
oss
rss
R
Q
Q
Q
gd
www.diodes.com
20
= 90°C/W.
θJA
2 of 6
V
DSS
V
GSS
I
D
I
DM
PD
R
θJA
TJ, T
STG
-55 to +150 °C
V
1 µA
nA
m
S
24
42
68
8
100
1.4 V
29
50
100
0.9 1.4 V
532
144
117
1.3
6.7
0.8
3.0
pF
pF
pF
nC
DMN2050L
20 V
±12 V
5.9 A
21 A
1.4 W
90 °C/W
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VDS = VGS, ID = 250µA
V
= 4.5V, ID = 5.0A
GS
VGS = 2.5V, ID = 3.1A
VGS = 2.0V, ID = 1.5A
VDS =5V, ID = 2.1A
VGS = 0V, IS = 2.0A
= 10V, VGS = 0V
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 10V, VGS = 4.5V, ID = 5.0A
VDS = 10V, VGS = 4.5V, ID = 5.0A
VDS = 10V, VGS = 4.5V, ID = 5.0A
October 2013
© Diodes Incorporated
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