Diodes DMN2041LSD User Manual
4
8
5
Y
W
485
Y
Product Summary
V
R
(BR)DSS
28mΩ @ V
20V
41mΩ @ VGS = 2.5V
DS(ON)
max
= 4.5V
GS
TA = +25°C
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
NEW PRODUCT
Applications
Power Management Functions
DC-DC Converters
TOP VIEW
S1
G1
S2
G2
I
max
D
7.63A
4.35A
TOP VIEW
Internal Schematic
DMN2041LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
SO-8
D2
S2
D1
D1
D2
D2
D1
G1
S1
N-Channel MOSFET
G2
N-Channel MOSFET
Ordering Information (Note 4)
Part Number Case Packaging
DMN2041LSD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N2041LD
Y WW
1
Chengdu A/T Site
DMN2041LSD
Document number: DS31964 Rev. 3 - 2
N2041LD
Y W
1
Shanghai A/T Site
www.diodes.com
= Manufacturer’s Marking
N2041LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 6
February 2014
© Diodes Incorporated
)
g
g
g
g
g
)
r
)
DMN2041LSD
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Steady
State
Pulsed Drain Current (Note 6)
T
= +25°C
A
= +85°C
T
A
V
DSS
V
GSS
I
D
I
DM
20 V
12
7.63
4.92
V
A
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C R
NEW PRODUCT
Operating and Storage Temperature Range
P
T
J, TSTG
θJA
D
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
20
— —
— —
—
— V
1 μA
±100 nA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.5 — 1.2 V
—
— 6 — S
|
— 0.7 1.2 V
19 28
25 41
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by function temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
C
C
t
t
C
oss
rss
R
Q
Q
Q
Q
D(on
t
D(off
t
iss
s
d
f
—
—
—
—
—
—
—
—
—
—
—
—
550
88
81
1.34
15.6
7.2
1
1.9
4.69
13.19
22.1
6.43
—
—
—
—
—
—
—
—
—
—
—
—
DMN2041LSD
Document number: DS31964 Rev. 3 - 2
2 of 6
www.diodes.com
1.16 W
107.4 °C/W
-55 to +150 °C
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
V
= 4.5V, ID = 6A
mΩ
GS
V
= 2.5V, ID = 5.2A
GS
VDS = 10V, ID = 6A
VGS = 0V, IS = 1.7A
=10V, VGS = 0V,
V
pF
Ω
nC
nC
ns
DS
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 10V, VDS = 10V, ID = 6A
= 4.5 V, VDS = 10V,
V
GS
= 6A
I
D
= 10V, V
V
DD
= 1Ω, ID = 6.7A
R
g
= 4.5V,
GEN
February 2014
© Diodes Incorporated
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