Diodes DMN2041L User Manual

Features

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

TOP VIEW

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

 Case: SOT-23
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below
 Weight: 0.008 grams (approximate)

Drain

D

Gate

Source

Internal Schematic TOP VIEW

G

DMN2041L

S

Ordering Information (Note 4)

Part Number Case Packaging

DMN2041L-7 SOT-23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MN9

Chengdu A/T Site

YM

MN9

Shanghai A/T Site

MN9 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

YM

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

DMN2041L

Document number: DS31962 Rev. 2 - 2

1 of 6

www.diodes.com

October 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

= +25°C

Continuous Drain Current (Note 5)

Steady

State

T

A

T

= +70°C

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient @ TA = +25°C R

Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = 25°C I

Gate-Source Leakage

BV

DSS

I

GSS

DSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

|Y

V

SD

|

fs

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN2041L

Document number: DS31962 Rev. 2 - 2

C

iss

C

oss

C

rss

R

g

Q

g

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

www.diodes.com

V

V

I

P

T

J, TSTG

DSS

GSS

I

D

DM

D

θJA

20 V

±12 V

6.4

4.5

30 A

0.78 W

161 °C/W

-55 to +150 °C

20 — — V

— —

— —

1.0 µA

±100 nA

0.5 — 1.2 V

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

20
26

28
41

mΩ

6 — S

0.7 1.2 V

550

88

81

1.34

15.6

7.2

1.0

1.9

4.69

13.19

22.10

6.43

—

—

—

—

—

—

—

—

—

—

—

—

pF

Ω

nC

nC

ns

2 of 6

DMN2041L

A

VGS = 0V, ID = 250μA

VDS = 20V, VGS = 0V

VGS = ±12V, VDS = 0V

VDS = VGS, ID = 250μA

= 4.5V, ID = 6.0A

V

GS

VGS = 2.5V, ID = 5.2A

VDS = 10V, ID = 6A

VGS = 0V, IS = 1.7A

= 10V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

VGS = 10V, VDS = 10V, ID = 6A

V

= 4.5V, VDS = 10V, ID = 6A

GS

V

= 10V, V

DD

= 1Ω, ID = 6.7A

R

GEN

= 4.5V,

GEN

October 2013

© Diodes Incorporated