Diodes DMN2040LTS User Manual

Page 1
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Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
TOP VIEW
BOTTOM VIEW
DMN2040LTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: TSSOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.039 grams (approximate)
D1 D2
G1
1
D S1
2
S1
3
G1
4
Top View
Pin Configuration
G2
8
D S2
7
S2
6 5
S1 S2
G2
Internal Schematic
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
Thermal Characteristics
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C R Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
4. Repetitive rating, pulse width limited by junction temperature.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
DMN2040LTS
Document number: DS31941 Rev. 2 - 2
Characteristic Symbol Value Unit
T
= 25°C
A
T
= 70°C
A
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V
DSS
V
GSS
I
D
I
DM
P
D
JA
T
, T
J
STG
20 V
±12 V
6.7
4.9
A
30 A
0.89 W 140 °C/W
-55 to +150 °C
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)
g
g
g
g
r
R
C
U
R
RENT
R
C
URR
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage
Static Drain-Source On-Resistance Forward Transfer Admittance
Diodes Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance
Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effects.
6. Guaranteed by design. Not subject to production testing.
20
V = 10.0V
GS
V = 4.5V
GS
V = 3.0V
15
(A)
GS
V = 2.5V
GS
V = 2.0V
GS
BV
I
DSS
I
GSS
V
GS(th
R
DS (ON)
|Y V
C C C
R
Q Q Q
t
D(on)
t
D(off)
DSS
fs
SD
iss
oss
rss
t
t
f
DMN2040LTS
20 - - V
- - 1.0 A
- - ±100 nA
0.5 - 1.2 V
-
|
s d
- 8 - S
- 0.7 1.2 V
- 570 -
- 85 -
- 75 -
- 1.23 -
- 5.2 -
- 0.86 -
- 1.25 -
-
-
-
-
19 26
5.2
13.5
19.8
6.1
26 36
- ns
- ns
- ns
- ns
20
V = 5V
DS
16 (A) EN
12
VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250A V
= 4.5V, ID = 6.0A
m
GS
VGS = 2.5V, ID = 5.2A VDS = 10V, ID = 6A Is = 1.7A, VGS = 0V
pF pF pF
nC nC nC
= 10V, VGS = 0V,
V
DS
f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz
V
= 4.5V, VDS = 10V,
GS
I
= 7A
D
V
= 10V, VGS = 4.5V,
DD
= 1.5, RG = 1
R
L
10
AIN
AIN
D
I, D
5
V = 1.5V
GS
0
012 345
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Ch ar acterist ics
8
T = 150°C
D
I, D
4
0
01234
A
T = 125°C
A
T = 85°C
A
V , GATE SOURCE VOLTAGE (V)
GS
T = 25°C
A
T = -55°C
A
Fig. 2 Typical Transfer Characteristics
DMN2040LTS
Document number: DS31941 Rev. 2 - 2
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© Diodes Incorporated
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R
R
N
OUR
CE O
N
R
TAN
C
DMN2040LTS
0.1
Ω
0.06
Ω
E ( )
V= 4.5V
GS
V = 1.8V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 8.0V
GS
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0.01 048121620
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain C ur rent and G at e Vol tage
1.6
ESIS
0.04
-
T = 150°C
A
T = 125°C
A
T = 85°C
-S
0.02
AI , D
DS(ON)
0
0 4 8 121620
I , DRAIN CURRENT (A)
D
A
T = 25°C
A
T = -55°C
A
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain C urrent an d Temperature
0.06
Ω
1.4
V = 4.5V
GS
1.2
I = 5A
D
V = 10V
GS
I = 10A
D
1.0
DS(ON)
R , DRAIN-SOURCE
0.8
ON-RESISTANCE (NORMALIZED)
0.6
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance Variation with Temperature
1.6
1.4
1.2
1.0
0.8
0.6
I = 250µA
D
I = 1mA
D
0.04
V = 4.5V
GS
I = 5A
D
V = 10V
GS
I = 10A
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
0.02
DS(ON)
0
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)
J
Fig. 6 On-Resistance Variation with T emperature
20
16
12
T = 25°C
A
8
0.4
0.2
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
S
I , SOURCE CURRENT (A)
4
0
0.2
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
DMN2040LTS
Document number: DS31941 Rev. 2 - 2
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© Diodes Incorporated
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C, CAPAC
T
C
F
R
OUR
C
G
C
U
R
RENT
T
R
T T
HER
R
TANC
DMN2040LTS
1,000
10,000
(nA)
T = 150°C
800
)
E (p
600
AN I
C
iss
400
200
0
C
oss
C
rss
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Capacitance
1
E
D = 0.7
D = 0.5
D = 0.3
f = 1MHz
1,000
E
100
E LEAKA
10
AIN-S
DSS
1
I, D
048121620
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
A
T = 125°C
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
ESIS
0.1
MAL
ANSIEN
r(t),
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 133°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)
1
Fig. 11 Transient Thermal Response
Ordering Information (Note 7)
Part Number Case Packaging
DMN2040LTS-13 TSSOP-8L 2500 / Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
8
N2040L
YY WW
1
Top Vi ew
DMN2040LTS
Document number: DS31941 Rev. 2 - 2
5
Logo
Part no
Xth week: 01~52 Year: “0 9” = 20 09
4
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Package Outline Dimensions
e
A
Suggested Pad Layout
D
E
E1
b
A2
D
C3 C1
A1
Y
X
C2
G
c
See Detail C
Gauge plane
a
L
Detail C
TSSOP-8L
Dim Min Max Typ
a 0.09
A
A1 0.05 0.15
− −
1.20
−
−
−
A2 0.825 1.025 0.925
b 0.19 0.30 c 0.09 0.20
−
−
D 2.90 3.10 3.025 e E
− −
− −
0.65
6.40
E1 4.30 4.50 4.425
L 0.45 0.75 0.60 All Dimensions in mm
Dimensions Value (in mm)
X 0.45
Y 1.78 C1 7.72 C2 0.65 C3 4.16
G 0.20
DMN2040LTS
DMN2040LTS
Document number: DS31941 Rev. 2 - 2
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMN2040LTS
DMN2040LTS
Document number: DS31941 Rev. 2 - 2
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