Diodes DMN2040LTS User Manual

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Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

TOP VIEW

BOTTOM VIEW

DMN2040LTS

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: TSSOP-8L

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.039 grams (approximate)

D1 D2

G1

1

D
S1

2

S1

3

G1

4

Top View

Pin Configuration

G2

8

D
S2

7

S2

6
5

S1 S2

G2

Internal Schematic

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 3)

Steady

State

Pulsed Drain Current (Note 4)

Thermal Characteristics

Power Dissipation (Note 3)

Thermal Resistance, Junction to Ambient @TA = 25°C R
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

4. Repetitive rating, pulse width limited by junction temperature.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

DMN2040LTS

Document number: DS31941 Rev. 2 - 2

Characteristic Symbol Value Unit

T

= 25°C

A

T

= 70°C

A

www.diodes.com

V

DSS

V

GSS

I

D

I

DM

P

D

JA

T

, T

J

STG

20 V

±12 V

6.7

4.9

A

30 A

0.89 W
140 °C/W

-55 to +150 °C

1 of 6

October 2009

© Diodes Incorporated

)

g

g

g

g

r

R

C

U

R

RENT

R

C

URR

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diodes Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance

NEW PRODUCT

Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effects.

6. Guaranteed by design. Not subject to production testing.

20

V = 10.0V

GS

V = 4.5V

GS

V = 3.0V

15

(A)

GS

V = 2.5V

GS

V = 2.0V

GS

BV

I

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

DSS

fs

SD

iss

oss

rss

t

t

f

DMN2040LTS

20 - - V

- - 1.0 A

- - ±100 nA

0.5 - 1.2 V

-

|

s
d

- 8 - S

- 0.7 1.2 V

- 570 -

- 85 -

- 75 -

- 1.23 -

- 5.2 -

- 0.86 -

- 1.25 -

-

-

-

-

19
26

5.2

13.5

19.8

6.1

26
36

- ns

- ns

- ns

- ns

20

V = 5V

DS

16
(A)
EN

12

VGS = 0V, ID = 250A
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V

VDS = VGS, ID = 250A
V

= 4.5V, ID = 6.0A

m

GS

VGS = 2.5V, ID = 5.2A
VDS = 10V, ID = 6A
Is = 1.7A, VGS = 0V

pF
pF
pF



nC
nC
nC

= 10V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

V

= 4.5V, VDS = 10V,

GS

I

= 7A

D

V

= 10V, VGS = 4.5V,

DD

= 1.5, RG = 1

R

L

10

AIN

AIN

D

I, D

5

V = 1.5V

GS

0

012 345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Ch ar acterist ics

8

T = 150°C

D

I, D

4

0

01234

A

T = 125°C

A

T = 85°C

A

V , GATE SOURCE VOLTAGE (V)

GS

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

DMN2040LTS

Document number: DS31941 Rev. 2 - 2

2 of 6

www.diodes.com

October 2009

© Diodes Incorporated