Diodes DMN2029USD User Manual
2
G
DMN2029USD
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
I
D
TA = +25°C
5.8A
4.8A
V
(BR)DSS
20V
R
DS(on) max
25m @ V
35m @ VGS = 2.5V
GS
= 4.5V
Package
SO-8
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
DC-DC Converters
Power Management Functions
ADVANCE INFORMATION
Backlighting
NEW PRODUCT
SO-8
G1
S2
G2
Top View Top View
Pin Configuration
Features
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D1S1
D1
D
D1
D2
1
G2
D2
S1
Equivalent Circuit
S2
Ordering Information (Note 4)
Part Number Case Packaging
DMN2029USD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
DMN2029USD
Document number: DS36127 Rev. 3 - 2
Top View
8 5
N2029SD
YY
WW
1 4
www.diodes.com
1 of 6
Logo
Part no
.
Xth week: 01 ~ 53
Year: “12” = 2012
May 2013
© Diodes Incorporated
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r
DMN2029USD
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Steady
State
t < 10s
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
20 V
±8 V
5.8
4.7
6.9
5.7
A
A
2.1 A
30 A
15 A
11.2 mJ
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
= +25°C
T
Total Power Dissipation (Note 5)
ADVANCE INFORMATION
NEW PRODUCT
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
A
TA = +70°C
Steady state
t < 10s 70
= +25°C
T
A
TA = +70°C
Steady state
t < 10s 60
R
R
R
T
J, TSTG
P
P
θ
θJA
θJC
D
JA
D
1.2
0.7
115
1.4
0.9
W
°C/W
W
95
°C/W
14.5
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
20 — — V
— —
— —
1 µA
±100 nA
VGS = 0V, ID = 250µA
VDS = 16V, VGS = 0V
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS(ON)
|Y
V
fs
SD
0.6 — 1.5 V
—
—
—
|
—
14 25
19 35
10 — S
0.7 1.2 V
VDS = VGS, ID = 250µA
= 4.5V, ID = 6.5A
V
mΩ
GS
V
= 2.5V, ID = 5.4A
GS
V
= 5V, ID = 6.5A
DS
VGS = 0V, IS = 1.3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
G
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 8V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
AR
Q
Q
t
D(on
t
D(off
s
d
t
t
f
t
r
Q
r
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1171
133
110
1.2
10.4
18.6
1.9
2.3
16.5
33.3
119.3
53.5
7.5
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
= 10V, VGS = 0V
pF
Ω
nC
nS
nS
nC
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
V
= 10V, ID = 3A
DS
V
= 4.5V, VDD = 10V, R
GS
I
= 1A
D
IS = 6.5A, dI/dt = 100A/μs
IS = 6.5A, dI/dt = 100A/μs
GEN
= 6Ω,
DMN2029USD
Document number: DS36127 Rev. 3 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
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