Diodes DMN2028USS User Manual
A
f
D
Product Summary
V
R
(BR)DSS
20V
20mΩ @ V
28mΩ @ VGS= 2.5V
DS(on)
max
= 4.5V
GS
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
ADVANCE INFORMATION
• Battery charging
• Power management functions
• DC-DC converters
• Portable power adaptors
ESD PROTECTED TO 2kV
SO-8
Top View Top View
max
I
D
= 25°C
T
A
(Note 3)
9.8A
8.3A
Product Line o
Diodes Incorporated
DMN2028USS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Output Leakage
• ESD Protected Up to 2kV
• Lead Free/RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate)
DS
S
S
G
D
D
D
G
S
Equivalent Circuit
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN2028USS-13 N2028US 13 12 2,500
Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com
Marking Information
DMN2028USS
Document number: DS32075 Rev. 3 - 2
N2028US
YY WW
= Manufacturer’s Marking
N2028US = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 10 = 2010)
WW = Week (01-53)
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f
θ
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
V
= 4.5V
GS
(Note 3)
TA = 70°C (Note 3)
V
DSS
V
GS
I
D
(Note 2) 7.3
Pulsed Drain current
V
GS
= 4.5V
Continuous Source current (Body diode) (Note 3)
Pulsed Source current (Body diode) (Note 4)
(Note 4)
IDM
I
S
I
SM
ADVANCE INFORMATION
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 5)
Operating and storage temperature range
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
(Note 2)
P
D
(Note 3)
(Note 2)
(Note 3) 44.5
R
JA
θ
R
JL
, T
T
J
STG
Diodes Incorporated
20
±12
9.8
7.9
45.0
6.0
45.0
1.56
12.5
2.81
22.5
80.0
37.0
-55 to 150
DMN2028USS
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V
A
W
mW/°C
°C/W
°C
DMN2028USS
Document number: DS32075 Rev. 3 - 2
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f
Thermal Characteristics
R
10
1
100m
ADVANCE INFORMATION
10m
Drain Current (A)
D
1m
I
100m 1 10
Limit ed
DS(on)
DC
1s
100ms
10ms
Single Pulse
T
=25°C
amb
1ms
100µs
VDS Drain-Source Voltage (V)
Safe Operating Area
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Diodes Incorporated
DMN2028USS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
25mm x 25mm
1oz FR4
Derating Curve
80
25mm x 25mm
70
60
50
40
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
1oz FR4
T
=25°C
amb
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
Single Pulse
T
=25°C
amb
DMN2028USS
Document number: DS32075 Rev. 3 - 2
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October 2010
© Diodes Incorporated
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