Diodes DMN2028UFDH User Manual

n

n

Product Summary

max

I

D

V

R

(BR)DSS

20V

22mΩ @ VGS = 4.5V

26mΩ @ VGS = 2.5V

36mΩ @ VGS = 1.8V

DS(ON)

20mΩ @ V

max

= 10V

GS

TA = +25°C

6.8A

6.5A

6.1A

5.2A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

• Power management functions

• Load Switch

ESD PROTECTED

POWERDI3030-8

D

D

D

D

Bottom View

S2

G2

S1

DMN2028UFDH

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Features

• Low On-Resistance

• Low Input Capacitance

• ESD Protected Up To 2kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: POWERDI3030-8

• Case Material: Molded Plastic, “Green” Molding Compound.

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Weight: 0.0072 grams (approximate)

Drai

Source 2

G1

Gate 1

Gate

Protection

Diode

Drai

Source 1

Internal Schematic

Gate 2

Gate
Protection
Diode

®

Ordering Information (Note 4)

Part Number Case Packaging

DMN2028UFDH-7 POWERDI3030-8 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

DMN2028UFDH

Document number: DS35805 Rev. 5 - 2

S34 = Product Type Marking Code
YYWW = Date Code Marking

YYWW

YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 to 53)

S34

1 of 6

www.diodes.com

January 2013

© Diodes Incorporated

θ

)

g

g

g

g

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage (Note 5)

Continuous Drain Current (Note 7) VGS = 10V

Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs pulse, Duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient (Note 7)

Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range

Steady

State

t<10s

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

Steady state

Steady state

DMN2028UFDH

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

P

D

R

JA

P

R

R

T

J, TSTG

θ

D

JA

θ

JC

t<10s 72

t<10s 50

20 V

±12 V

6.8

5.8

8.8

7.0

A

A

2 A

40 A

1.1 W

118

°C/W

1.5 W
82

°C/W

14

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. AEC-Q101 VGS maximum is ±9.6V.

9. Guaranteed by design. Not subject to production testing.

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8 .Short duration pulse test used to minimize self-heating effect.

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

DSS

SD

iss

oss

rss

t

t

20 — — V
— — 1 µA
— — ±10 µA

0.5 — 1 V
16 20

—

17 22
19 26
24 36

— 8 — S

|

fs

s

d

f

— 0.7 1.0 V

— 151 —
— 91 —
— 32 —
— 200 —
— 8.5 —
— 1.6 —
— 2.8 —

—
—
—
—

53
77

561
234

— ns
— ns
— ns
— ns

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V

VDS = VGS, ID = 250μA

= 10V, ID = 4A

V

GS

V

= 4.5V, ID = 4A

mΩ

GS

V

= 2.5V, ID = 4A

GS

V

= 1.8V, ID = 4A

GS

VDS = 5V, ID = 12A
VGS = 0V, IS = 5A

pF

V

= 10V, VGS = 0V,

pF
pF

nC
nC
nC

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 10V,

V

GS

I

= 6.5A

D

= 10V, VDS = 4.5V,

V

GS

= 6Ω, RL = 1.0 Ω, ID = 1A

R

G

POWERDI is a registered trademark of Diodes Incorporated.

DMN2028UFDH

Document number: DS35805 Rev. 5 - 2

2 of 6

www.diodes.com

January 2013

© Diodes Incorporated