Diodes DMN2028UFDH User Manual

n

n

Product Summary

max

I

D

V

R

(BR)DSS

20V

22mΩ @ VGS = 4.5V

26mΩ @ VGS = 2.5V

36mΩ @ VGS = 1.8V

DS(ON)

20mΩ @ V

max

= 10V

GS

TA = +25°C

6.8A

6.5A

6.1A

5.2A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

• Power management functions

• Load Switch

ESD PROTECTED

POWERDI3030-8

D

D

D

D

Bottom View

S2

G2

S1

DMN2028UFDH

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Features

• Low On-Resistance

• Low Input Capacitance

• ESD Protected Up To 2kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: POWERDI3030-8

• Case Material: Molded Plastic, “Green” Molding Compound.

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Weight: 0.0072 grams (approximate)

Drai

Source 2

G1

Gate 1

Gate

Protection

Diode

Drai

Source 1

Internal Schematic

Gate 2

Gate
Protection
Diode

®

Ordering Information (Note 4)

Part Number Case Packaging

DMN2028UFDH-7 POWERDI3030-8 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

DMN2028UFDH

Document number: DS35805 Rev. 5 - 2

S34 = Product Type Marking Code
YYWW = Date Code Marking

YYWW

YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 to 53)

S34

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θ

)

g

g

g

g

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage (Note 5)

Continuous Drain Current (Note 7) VGS = 10V

Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs pulse, Duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient (Note 7)

Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range

Steady

State

t<10s

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

Steady state

Steady state

DMN2028UFDH

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

P

D

R

JA

P

R

R

T

J, TSTG

θ

D

JA

θ

JC

t<10s 72

t<10s 50

20 V

±12 V

6.8

5.8

8.8

7.0

A

A

2 A

40 A

1.1 W

118

°C/W

1.5 W
82

°C/W

14

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. AEC-Q101 VGS maximum is ±9.6V.

9. Guaranteed by design. Not subject to production testing.

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8 .Short duration pulse test used to minimize self-heating effect.

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

DSS

SD

iss

oss

rss

t

t

20 — — V
— — 1 µA
— — ±10 µA

0.5 — 1 V
16 20

—

17 22
19 26
24 36

— 8 — S

|

fs

s

d

f

— 0.7 1.0 V

— 151 —
— 91 —
— 32 —
— 200 —
— 8.5 —
— 1.6 —
— 2.8 —

—
—
—
—

53
77

561
234

— ns
— ns
— ns
— ns

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V

VDS = VGS, ID = 250μA

= 10V, ID = 4A

V

GS

V

= 4.5V, ID = 4A

mΩ

GS

V

= 2.5V, ID = 4A

GS

V

= 1.8V, ID = 4A

GS

VDS = 5V, ID = 12A
VGS = 0V, IS = 5A

pF

V

= 10V, VGS = 0V,

pF
pF

nC
nC
nC

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 10V,

V

GS

I

= 6.5A

D

= 10V, VDS = 4.5V,

V

GS

= 6Ω, RL = 1.0 Ω, ID = 1A

R

G

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DMN2028UFDH

Document number: DS35805 Rev. 5 - 2

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RAIN CUR

REN

T

RAIN CUR

REN

T

R

R

OUR

ON-R

R

R

OUR

ON-R

R

R

OUR

C

R

R

OUR

CE ON-R

TANC

DMN2028UFDH

30

V= 8.0V

GS

25

V= 4.5V

GS

V= 3.0V

(A)

20

GS

V= 2.5V

GS

V= 2.0V

GS

20

V= 5.0V

DS

16

(A)

12

15

T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

I, D

10

D

V= 1.5V

GS

5

0

0 0.5 1.0 1.5 2.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristic

0.05

Ω

0.04

8

D

I, D

4

0

0 0.5 1.0 1.5 2.0 2.5

Figure 2 Typical Transfer Characteristics

0.06

Ω

0.05

V = 4.5VGS

ESISTANCE ( )

0.03

V = 1.8VGS

CE

0.02

AIN-S

0.01

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.6

V= V

GS

I= 5.5A

D

1.4

E

1.2

AIN-S

, D

1.0

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

2. 5

V = 2.5VGS

V = 4.5VGS

V = 4.5V

GS

I= 6.5A

D

ESISTANCE ( )

0.04

T = 150°C

0.03

CE

0.02

AIN-S

, D

0.01

DS(ON)

0

04 8121620

I , DRAIN CURRENT (A)

D

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.06

Ω

E ( )

0.05

0.04

ESIS

V= V

2.5

GS

I = 5.5A

D

0.03

V = 4.5V

GS

I = 6.5A

D

AIN-S

, D

0.02

0.01

DS(ON)

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 5 On-Resistance Variation with Temperature

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6 On-Resistance Variati on with Temperature

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Document number: DS35805 Rev. 5 - 2

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GAT

THR

H

O

OLT

G

OUR

CE CUR

RENT

C

UNC

TIO

N CAPACITAN

C

F

T

R

T

T

H

R

R

TANC

1.4

1.2

E (V)
A

1.0

I= 1mA

LD V

0.8

ES

0.6

E

0.4

0.2

GS(th)

V,

0

-50 -25 0 25 50 75 100 125 150

I = 250µA

D

T , JUNCTION TEMPERATURE ( C)

J

D

Figure 7 Gate Threshold Variation vs. Ambient Temperat ure

1,000

)

E (p

DMN2028UFDH

20

16

(A)

12

T= 25°C

A

8

S

I, S

4

0

°

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

100

R

DS(ON)

Limited

P = 100µs

W

10

DC

P = 10s

1

C

iss

100

C

oss

, J

T

f = 1MHz

10

0 2 4 6 8 10 12 14 16 18 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

rss

Figure 9 Typical Junction Capacitance

1

D = 0.9
D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

0.1

D

I , DRAIN CURRENT (A)

0.01

0.001

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

T = 150°C

J(MAX)

T = 25

°C

A

Single Pulse

0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 SOA, Safe Operation Area

E

D = 0.02

0.01

D = 0.01

R (t) = r(t) * R

θθ

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

JA JA

R = 120°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIME (sec)

Figure 11 Transient Thermal Resistance

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

E

Z (4X)

D

1

Pin#1
C0.10

L (8x)

e

b (8x)

A1

A3

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

POWERDI is a registered trademark of Diodes Incorporated.

X (8x)

DMN2028UFDH

Document number: DS35805 Rev. 5 - 2

C

Y (8x)

Dimensions

Y1

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DMN2028UFDH

POWERDI3030-8

Dim Min Max Typ

A 0.75 0.85 0.80
A1 0 0.05 0.02
A3

b 0.25 0.35 0.30
D 2.95 3.05 3.00
E 2.95 3.05 3.00
e

L 0.55 0.65 0.60

Z

Y1 3.400

− −

− −

− −

All Dimensions in mm

(in mm)
C 0.650
X 0.400
Y 0.850

0.203

0.65

0.375

Value

January 2013

© Diodes Incorporated

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

DMN2028UFDH

POWERDI is a registered trademark of Diodes Incorporated.

DMN2028UFDH

Document number: DS35805 Rev. 5 - 2

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January 2013

© Diodes Incorporated