Diodes DMN2027USS User Manual

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D
Product Summary
V
R
(BR)DSS
20V
20mΩ @ V 28mΩ @ VGS= 2.5V
DS(on)
max
= 4.5V
GS
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Battery charging
Power management functions
DC-DC converters
Portable power adaptors
SO-8
S
S
G
Top View
max
I
D
T
= 25°C
A
(Note 3)
9.8A
8.3A
Top View
A Product Line o
Diodes Incorporated
DMN2027USS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free/RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
DS
D
D
G
D
S
Equivalent Circuit
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN2027USS-13 N2027US 13 12 2,500
Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com
Marking Information
DMN2027USS
Document number: DS35038 Rev. 1 - 2
N2027US
WW
YY
= Manufacturer’s Marking N2027US = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 10 = 2010) WW = Week (01 - 53)
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θ
Diodes Incorporated
DMN2027USS
A Product Line o
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source voltage Gate-Source voltage
Continuous Drain current
V
= 4.5V
GS
(Note 3) TA = 70°C (Note 3)
V
DSS
V
GS
I
D
20
±12
9.8
7.9
(Note 2) 7.3
Pulsed Drain current
V
GS
= 4.5V
(Note 4) Continuous Source current (Body diode) (Note 3) Pulsed Source current (Body diode) (Note 4)
IDM
I
S
I
SM
45.0
6.0
45.0
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power dissipation Linear derating factor
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 5)
Operating and storage temperature range
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
(Note 2)
P
D
(Note 3)
(Note 2)
(Note 3) 44.5
R
JA
θ
R
JL
, T
T
J
STG
1.56
12.5
2.81
22.5
80.0
37.0
-55 to 150
V
A
W
mW/°C
°C/W
°C
DMN2027USS
Document number: DS35038 Rev. 1 - 2
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Thermal Characteristics
R
10
1
100m
10m
Drain Current (A)
D
1m
I
100m 1 10
Limit ed
DS(on)
DC
1s
100ms
10ms
Single Pulse
T
=25°C
amb
1ms
100µs
VDS Drain-Source Voltage (V)
Safe Operating Area
A Product Line o
Diodes Incorporated
DMN2027USS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
25mm x 25mm
1oz FR4
Derating Curve
80
25mm x 25mm
70 60 50 40 30 20 10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
1oz FR4
T
=25°C
amb
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
Single Pulse
T
=25°C
amb
DMN2027USS
Document number: DS35038 Rev. 1 - 2
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)
g
g
g
g
g
)
r
)
R
C
U
R
R
T
R
CUR
RENT
A Product Line o
Diodes Incorporated
DMN2027USS
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
BV
I I
DSS DSS GSS
20 - - V
- - 1.0
- - ±100 nA
VGS = 0V, ID = 250μA
μA
= 20V, VGS = 0V
V
DS
VGS = ±12V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 6) Forward Transfer Admittance (Note 6 & 7)
Diode Forward Voltage (Note 6)
V
GS(th
R
DS (ON)
|Y V
SD
|
fs
0.6 1.0 1.3 V
-
11 20 15 28
- 16 - S
- 0.7 1.3 V
VDS = VGS, ID = 250μA
V
= 4.5V, ID = 9.4A
m
GS
V
= 2.5V, ID = 8.3A
GS
VDS = 5V, ID = 9.4A
VGS = 0V, IS = 1.3A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance
Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 8) Total Gate Charge (Note 8) Gate-Source Charge (Note 8) Gate-Drain Charge (Note 8) Turn-On Delay Time (Note 8) Turn-On Rise Time (Note 8) Turn-Off Delay Time (Note 8) Turn-Off Fall Time (Note 8)
Notes: 6. Measured under pulsed conditions. Pulse width 300μs; duty cycle 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
C C
t
t
C
oss rss
R Q
Q Q Q
D(on
t
D(off
t
iss
s
d
f
- 1000 -
- 166 -
pF
- 158 -
- 1.51 -
- 7.0 -
- 11.6 -
- 2.7 -
nC
- 3.4 -
- 11.67 -
- 12.49 -
- 35.89 -
ns
- 12.33 -
V
= 10V, VGS = 0V,
DS
f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz
VGS = 2.5V
V
= 10V
DS
= 9.4A
= 4.5V
V
GS
= 4.5V, VDS = 10V,
V
GS
= 6Ω , ID = 1A
R
G
I
D
20
15
(A)
10
AIN
D
I, D
5
0
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic
GS
T = 150°C
A
T = 125°C
A
T = 85°C
T = 25°C
A
T = -55°C
A
A
(A) EN
30
25
20
V = 4.0V
GS
V = 3.5V
GS
V = 3.0V
GS
V = 2.5V
GS
V = 10V
GS
V = 4.5V
GS
15
V = 2.0V
AIN
10
D
I, D
5
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
V = 1.8V
GS
Fig. 1 Typical Output Characteristic
DMN2027USS
Document number: DS35038 Rev. 1 - 2
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R
R
OUR
CE ON-R
TANC
OUR
C
C
URR
T
Diodes Incorporated
DMN2027USS
A Product Line o
Ω
0.030
Ω
0.030
E ( )
V = 4.5V
GS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0 5 10 15 20
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain C urrent an d Temperature
0.030
ESIS
AIN-S , D
DS(ON)
0.025
0.020
0.015
0.010
0.005
0.025
0.020
0.015
V = 2.5V
GS
0.010
V = 4.5V
GS
0.005
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
0 5 10 15 20
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain C urrent and G ate Voltage
1.6
1.4
1.2
V = 2.5V
1.0
GS
I = 5A
DSON
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
D
0.8
0.6
-50 -25 0 25 50 75 100 125 150
V = 4.5V
GS
I = 10A
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 On-Resistance Variation with Temperature
3.0
2.5
2.0
1.5
1.0
I = 1mA
D
0.025
0.020
V = 2.5V
GS
I = 5A
0.015
0.010
DSON
R , DRAIN-SOURCE
0.005
ON-RESISTANCE (NORMALIZED)
0
D
V = 4.5V
GS
I = 10A
D
-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)
A
Fig. 6 On-Resistance Variation with Temperature
20
16
(A) EN
E
12
8
T = 25°C
A
I = 250µA
0.5
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)
A
D
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMN2027USS
Document number: DS35038 Rev. 1 - 2
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S
I, S
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Dio de Forwar d Voltag e vs. Curre nt
October 2010
© Diodes Incorporated
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C
CAP
C
TANC
F
GE CUR
R
T
Diodes Incorporated
DMN2027USS
A Product Line o
10,000
f = 1MHz
)
1,000
E (p
I A
100
,
10
0 5 10 15 20
C
iss
C
oss
C
rss
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Total Capacitance
10,000
T = 150°C
A
(nA)
1,000
EN
T = 125°C
A
100
T = 85°C
10
DSS
I , LEAKA
1
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Leakage Current
vs. Drain-S ource Voltage
A
T = 25°C
A
10
V = 15V
8
DS
I = 9.4A
D
6
4
2
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 5 10 15 20 25 30
Q , TOTAL GATE CHARGE (nC)
g
Fig. 11 Gate-Ch ar ge Characteristics
DMN2027USS
Document number: DS35038 Rev. 1 - 2
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Package Outline Dimensions
DIM Inches Millimeters DIM Inches Millimeters
A Product Line o
Diodes Incorporated
DMN2027USS
hx45°
Min. Max. Min. Max. Min. Max. Min.
Max.
A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC
A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51
D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20
θ
0° 8° 0°
E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50
L 0.016 0.050 0.40 1.27 - - - - -
Suggested Pad Layout
DMN2027USS
Document number: DS35038 Rev. 1 - 2
7.0
0.275
0.6 .024
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1.52
0.060
4.0
0.155
1.27
0.050
inches
mm
October 2010
© Diodes Incorporated
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
Diodes Incorporated
DMN2027USS
A Product Line o
DMN2027USS
Document number: DS35038 Rev. 1 - 2
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