Diodes DMN2027USS User Manual

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D

Product Summary

V

R

(BR)DSS

20V

20mΩ @ V 28mΩ @ VGS= 2.5V

DS(on)

max

= 4.5V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

ADVANCE INFORMATION

• Battery charging

• Power management functions

• DC-DC converters

• Portable power adaptors

SO-8

S

G

Top View

max

I

D

T

= 25°C

A

(Note 3)

9.8A

8.3A

Top View

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DMN2027USS

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free/RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

DS

D

G

D

S

Equivalent Circuit

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2027USS-13 N2027US 13 12 2,500

Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com

Marking Information

DMN2027USS

Document number: DS35038 Rev. 1 - 2

N2027US

WW

YY

= Manufacturer’s Marking N2027US = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 10 = 2010) WW = Week (01 - 53)

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DMN2027USS

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Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source voltage Gate-Source voltage

Continuous Drain current

V

= 4.5V

GS

(Note 3) TA = 70°C (Note 3)

V

DSS

V

GS

I

D

20

±12

9.8

7.9

(Note 2) 7.3

Pulsed Drain current

V

GS

= 4.5V

(Note 4) Continuous Source current (Body diode) (Note 3) Pulsed Source current (Body diode) (Note 4)

IDM

I

S

I

SM

45.0

6.0

45.0

ADVANCE INFORMATION

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power dissipation Linear derating factor

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 5)

Operating and storage temperature range

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.

5. Thermal resistance from junction to solder-point (at the end of the drain lead).

(Note 2)

P

D

(Note 3)

(Note 2)

(Note 3) 44.5

R

JA

θ

R

JL

, T

T

J

STG

1.56

12.5

2.81

22.5

80.0

37.0

-55 to 150

V

A

W

mW/°C

°C/W

°C

DMN2027USS

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Thermal Characteristics

R

10

1

100m

ADVANCE INFORMATION

10m

Drain Current (A)

D

1m

I

100m 1 10

Limit ed

DS(on)

DC

1s

100ms

10ms

Single Pulse

T

=25°C

amb

1ms

100µs

VDS Drain-Source Voltage (V)

Safe Operating Area

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DMN2027USS

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0 0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

25mm x 25mm

1oz FR4

Derating Curve

80

25mm x 25mm

70 60 50 40 30 20 10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

1oz FR4

T

=25°C

amb

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

100

10

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

Single Pulse

T

=25°C

amb

DMN2027USS

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R

C

U

R

T

R

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RENT

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DMN2027USS

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I I

DSS DSS GSS

20 - - V

- - 1.0

- - ±100 nA

VGS = 0V, ID = 250μA

μA

= 20V, VGS = 0V

V

DS

VGS = ±12V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 6) Forward Transfer Admittance (Note 6 & 7)

Diode Forward Voltage (Note 6)

V

GS(th

R

DS (ON)

|Y V

SD

|

fs

0.6 1.0 1.3 V

-

11 20 15 28

- 16 - S

- 0.7 1.3 V

VDS = VGS, ID = 250μA

V

= 4.5V, ID = 9.4A

mΩ

GS

V

= 2.5V, ID = 8.3A

GS

VDS = 5V, ID = 9.4A

VGS = 0V, IS = 1.3A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance

ADVANCE INFORMATION

Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 8) Total Gate Charge (Note 8) Gate-Source Charge (Note 8) Gate-Drain Charge (Note 8) Turn-On Delay Time (Note 8) Turn-On Rise Time (Note 8) Turn-Off Delay Time (Note 8) Turn-Off Fall Time (Note 8)

Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

7. For design aid only, not subject to production testing.

8. Switching characteristics are independent of operating junction temperatures.

C C

t

C

oss rss

R Q

Q Q Q

D(on

t

D(off

t

iss

s

d

f

- 1000 -

- 166 -

pF

- 158 -

- 1.51 - Ω

- 7.0 -

- 11.6 -

- 2.7 -

nC

- 3.4 -

- 11.67 -

- 12.49 -

- 35.89 -

ns

- 12.33 -

V

= 10V, VGS = 0V,

DS

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz

VGS = 2.5V

V

= 10V

DS

= 9.4A

= 4.5V

V

GS

= 4.5V, VDS = 10V,

V

GS

= 6Ω , ID = 1A

R

G

I

D

20

15

(A)

10

AIN

D

I, D

5

0

0 0.5 1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic

GS

T = 150°C

A

T = 125°C

A

T = 85°C

T = 25°C

A

T = -55°C

A

(A) EN

30

25

20

V = 4.0V

GS

V = 3.5V

GS

V = 3.0V

GS

V = 2.5V

GS

V = 10V

GS

V = 4.5V

GS

15

V = 2.0V

AIN

10

D

I, D

5

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

V = 1.8V

GS

Fig. 1 Typical Output Characteristic

DMN2027USS

Document number: DS35038 Rev. 1 - 2

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C

URR

T

Diodes Incorporated

DMN2027USS

A Product Line o

Ω

0.030

Ω

0.030

E ( )

V = 4.5V

GS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0

0 5 10 15 20

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain C urrent an d Temperature

0.030

ESIS

AIN-S , D

DS(ON)

0.025

0.020

0.015

0.010

0.005

0.025

0.020

0.015

V = 2.5V

GS

0.010

V = 4.5V

GS

0.005

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 5 10 15 20

ADVANCE INFORMATION

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent and G ate Voltage

1.6

1.4

1.2

V = 2.5V

1.0

GS

I = 5A

DSON

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

D

0.8

0.6

-50 -25 0 25 50 75 100 125 150

V = 4.5V

GS

I = 10A

D

T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

3.0

2.5

2.0

1.5

1.0

I = 1mA

D

0.025

0.020

V = 2.5V

GS

I = 5A

0.015

0.010

DSON

R , DRAIN-SOURCE

0.005

ON-RESISTANCE (NORMALIZED)

0

D

V = 4.5V

GS

I = 10A

D

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 On-Resistance Variation with Temperature

20

16

(A) EN

E

12

8

T = 25°C

A

I = 250µA

0.5

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

D

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

DMN2027USS

Document number: DS35038 Rev. 1 - 2

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S

I, S

4

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Dio de Forwar d Voltag e vs. Curre nt

October 2010

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DMN2027USS

A Product Line o

10,000

f = 1MHz

)

1,000

E (p

I A

100

,

10

0 5 10 15 20

ADVANCE INFORMATION

C

iss

C

oss

C

rss

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Total Capacitance

10,000

T = 150°C

A

(nA)

1,000

EN

T = 125°C

A

100

T = 85°C

10

DSS

I , LEAKA

1

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Leakage Current

vs. Drain-S ource Voltage

A

T = 25°C

A

10

V = 15V

8

DS

I = 9.4A

D

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 5 10 15 20 25 30

Q , TOTAL GATE CHARGE (nC)

g

Fig. 11 Gate-Ch ar ge Characteristics

DMN2027USS

Document number: DS35038 Rev. 1 - 2

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Package Outline Dimensions

ADVANCE INFORMATION

DIM Inches Millimeters DIM Inches Millimeters

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Diodes Incorporated

DMN2027USS

hx45°

Min. Max. Min. Max. Min. Max. Min.

Max.

A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC

A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51

D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20

θ

0° 8° 0° 8°

E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50

L 0.016 0.050 0.40 1.27 - - - - -

Suggested Pad Layout

DMN2027USS

Document number: DS35038 Rev. 1 - 2

7.0

0.275

0.6 .024

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1.52

0.060

4.0

0.155

1.27

0.050

inches

mm

October 2010

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

ADVANCE INFORMATION

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

Diodes Incorporated

DMN2027USS

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