Diodes DMN2022UFDF User Manual
Y
Product Summary
I
max
D
V
R
(BR)DSS
22m @ V
20V
26m @ VGS = 2.5V
36m @ VGS = 1.8V
50m @ VGS = 1.5V
DS(ON)
max
= 4.5V
GS
TA = +25°C
7.9A
7.2A
6.1A
5.2A
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Applications
Battery Management Application
Power Management Functions
DC-DC Converters
ESD PROTECTED
U-DFN2020-6
TYPE F
Bottom View Top View
DMN2022UFDF
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
2
Mechanical Data
Case: U-DFN2020-6 TYPE F
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
G
Gate Protec tion
Diode
Pin Out
Bottom View
Internal Schematic
D
S
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Quantity per reel
DMN2022UFDF-7 NC 7 3,000
DMN2022UFDF-13 NC 13 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN2022UFDF
D
atasheet number: DS36744 Rev. 1 - 2
NC
www.diodes.com
NC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M
M = Month (ex: 9 = September)
1 of 6
April 2014
© Diodes Incorporated
)
g
g
g
)
r
)
r
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
t<5s
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
T
= +25°C
A
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Thermal Characteristics
Characteristic Symbol Value Units
= +25°C
T
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6) Steady state
Operating and Storage Temperature Range
A
TA = +70°C
Steady state
t<5s 135
= +25°C
T
A
TA = +70°C
Steady state
t<5s 43
DMN2022UFDF
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
AS
E
AS
P
D
R
JA
P
D
R
JA
R
JC
T
J, TSTG
20 V
±8 V
7.9
6.3
9.4
7.5
A
A
40 A
2 A
12 A
8 mJ
0.66
0.42
188
2.03
1.31
W
°C/W
W
60
°C/W
8.3
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
20 — — V
— —
— —
1 µA
±10 µA
VGS = 0V, ID = 250A
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
SD
|
fs
0.5 — 1.0 V
15 22
—
18 26
24 36
35 50
—
—
18 — S
0.7 1.0 V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 4A
GS
V
= 2.5V, ID = 4A
m
GS
V
= 1.8V, ID = 4A
GS
V
= 1.5V, ID = 4A
GS
VDS = 5V, ID = 12A
VGS = 0V, IS = 5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 8V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
AS
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN2022UFDF
D
atasheet number: DS36744 Rev. 1 - 2
Q
s
Q
d
t
D(on
t
t
D(off
t
f
t
r
Q
r
www.diodes.com
— 907 —
— 98 —
— 38 —
— 194 —
— 9.8 —
— 18 —
— 1.5 —
— 1.8 —
— 56 —
— 87 —
— 632 —
— 239 —
— 143 — ns
—- 136 — nC
2 of 6
V
= 10V, VGS = 0V,
pF
nC
ns
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= 10V, ID = 6.5A
DS
= 10V, VGS = 4.5V,
V
DS
R
= 6, RL = 10,ID = 1A
G
IF = 4A, di/dt = 100A/s
IF = 4A, di/dt = 100A/s
April 2014
© Diodes Incorporated
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