Diodes DMN2020UFCL User Manual

DMN2020UFCL
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
R
(BR)DSS
20V
14 m @ V
20 m @ VGS = 2.5V
DS(ON)
max
= 4.5V
GS
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
Power management functions
Load Switch
ESD PROTECTED
Top View
X1-DFN1616-6
I
max
D
9 A
7.5 A
Type E
Features and Benefits
Typical off board profile of 0.5mm - ideally suited for thin
applications
Low R
PCB footprint of 2.56mm
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
– minimizes conduction losses
DS(ON)
2
Mechanical Data
Case: X1-DFN1616-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (NiPdAu Finish over Copper leadframe).
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.04 grams (approximate)
Pin 1
Top View
Device Symbol Bottom View
Pin-Out
e4
Ordering Information (Note 4)
Product Reel size (inches) Tape width (mm) Quantity per reel
DMN2020UFCL-7 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
20N
YM
DMN2020UFCL
Document number: DS36541 Rev. 3 – 2
20N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September)
1 of 6
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December 2013
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
= +25°C
A
T
= +70°C
A
Pulsed Drain Current (Note 7)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) R
Operating and Storage Temperature Range
Electrical Characteristics N-CHANNEL – Q1 (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
20 — — V
— — 1.0 A
— — 10 A
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
V
GS(th)
R
DS (ON)
V
SD
0.4 — 0.9 V
— 0.7 1.2 V
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
gd
t
t
g
g
gs
r
f
150 — pF
21.5 — nC
2.3 — nC
5.7 — ns
6.8 — ns
DMN2020UFCL
Document number: DS36541 Rev. 3 – 2
2 of 6
www.diodes.com
V
DSS
V
I
P
P
T
J, TSTG
GSS
I
D
DM
D
JA
D
JA
10 12 14
14 20 26
±10 V
0.61 W
205 °C/W
-55 to +150 °C
m
1788 — pF
162 — pF
1.36
2.2
3.8
33
nC
ns
ns
DMN2020UFCL
20 V
9
7.1
45 A
2.0 W
62 °C/W
VGS = 0V, ID = 250A
VDS = 16V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 9A
GS
VGS = 2.5V, ID = 7.5A
VGS = 1.8V, ID = 7A
VGS = 0V, IS = 1.6A
= 10V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
= 4.5V, VDS = 10V,
V
GS
= 3A
I
D
= 10V, VGS = 4.5V, ID = 4A
V
DD
= 2
R
G
A
December 2013
© Diodes Incorporated
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