Diodes DMN2020LSN User Manual

θ

g

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2KV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

TOP VIEW

DMN2020LSN

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SC-59

• Case Material - Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 2

• Ordering Information: See Page 2

• Weight: 0.014 grams (approximate)

SC-59

Drain

D

Gate

Gate

Protection

Diode

EQUIVALENT CIRCUIT

Source

G

TOP VIEW

Pin Out Confi

S

uration

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage Continuous

T

Continuous Drain Current

Steady

State

= 25°C

A

T

= 85°C

A

Pulsed Drain Current (Note 4)

V

DSS

V

GSS

I

D

I

DM

20 V

±12 V

6.9

4.5

A

30 A

Thermal Characteristics

Characteristic Symbol Value Units

Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

P

D

R

JA

T

, T

J

STG

DMN2020LSN

Document number: DS31946 Rev. 3 - 2

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0.61 W
204

-55 to +150

°C /W

°C

August 2011

© Diodes Incorporated

)

g

g

R

C

U

R

R

T

R

CUR

R

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage I

20 - - V VGS = 0V, ID = 250μA

DSS

- - 1.0

DSS

- - ±10

GSS

VDS = 20V, VGS = 0V

μA

VGS = ±12V, VDS = 0V

μA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V

Static Drain-Source On-Resistance R

0.5 1.0 1.5 V VDS = VGS, ID = 250μA

GS(th

-

DS (ON)

13
18

20
28

V

mΩ

GS

VGS = 2.5V, ID = 8.3A
Forward Transfer Admittance |Yfs| - 16 - S VDS = 5V, ID = 9.4A
Diode Forward Voltage VSD - 0.7 1.2 V VGS = 0V, IS = 1.3A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance C
Output Capacitance C

NEW PRODUCT

Reverse Transfer Capacitance C
Gate Resistance Rg
Total Gate Charge Qg - 11.6 - nC
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Turn-On Rise Time tr - 12.49 - ns
Turn-Off Delay Time t

- 1149 - pF

iss

- 157 - pF

oss

- 142 - pF

rss

- 2.7 - nC

s

- 3.4 - nC

d

D(on)

D(off)

- 1.51 -

Ω

- 11.67 - ns

- 35.89 - ns

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

V

GS

I

= 9.4A

D

V

DD

R

GEN

Turn-Off Fall Time tf - 12.33 - ns

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

(A)
EN

20

15

10

V = 8.0V

V = 4.5V

GS

V = 3.0V

GS

V = 2.5V

GS

GS

V = 2.0V

GS

(A)
EN

20

15

10

V = 10V

DS

DMN2020LSN

= 4.5V, ID = 9.4A

= 10V, VGS = 0V,

= 4.5V, VDS = 10V,

= 10V, VGS = 4.5V,

= 6Ω, ID = 1A

AIN

D

I, D

5

V = 1.8V

GS

V = 1.5V

GS

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Character i st ics

AIN

T = 150°C

D

I, D

5

0

0 0.5 1 1.5 2 2.5 3

V , GATE SOURCE VOLT AGE (V)

GS

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

DMN2020LSN

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R

RAIN-SOUR

CE O

N-R

TAN

C

R

RAIN

O

URCE O

N-R

TAN

C

OUR

CE C

U

R

RENT

NEW PRODUCT

DMN2020LSN

0.06

Ω

E ( )

Ω

E ( )

0.04

0.05

V = 4.5V

GS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0 2 4 6 8 101214 161820

I , DRAIN CURRENT (A)

D

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

0.04

ESIS

V = 1.8V

GS

0.03

0.02

, D

0.01

DS(ON)

0

02468101214161820

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

V = 2.5V

GS

V = 4.5V

GS

vs. Drain C urrent and Gate Voltage

1.6

0.03

ESIS

0.02

-S

0.01

, D

DS(ON)

0

0.04

Ω

1.4

1.2

V = 4.5V

GS

I = 500mA

1.0

0.8

DS(ON)

R , DRAIN-SOURCE

0.6

ON-RESISTANCE (NORMALIZED)

D

V = 2.5V

GS

I = 150mA

D

0.4

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On- Resistance Variation with Temperature

1.8

1.6

1.4

1.2

I = 1mA

D

1.0

I = 250µA

0.8

D

0.03

V = 2.5V

0.02

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

GS

I = 5A

D

V = 4.5V

GS

I = 10A

D

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On- Resistance Variation with Temperature

20

15

(A)

T = 25°C

A

10

0.6

S

I, S

0.4

0.2

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient T emperature

5

0

0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Dio de Forwar d Voltag e vs. Curre nt

DMN2020LSN

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C, CAPAC

T

C

F

RAIN-SOUR

C

G

CUR

R

N

T

T

R

T T

HER

R

TANC

NEW PRODUCT

DMN2020LSN

)

E (p
AN

I

1,800
1,600

1,400

1,200
1,000

800

f = 1MHz

C

iss

10,000

(nA)
E

1,000

E

E LEAKA

100

T = 150°C

A

T = 125°C

A

600

T = 85°C

400

C

200

oss

C

rss

0

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Capacitance

10

DSS

1

I, D

0 2 4 6 8 10 12 14 16 18 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

A

T = 25°C

A

T = -55°C

A

1

D = 0.7

E

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

0.01

ANSIEN

r(t),

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) *

θ

JA

R = 205°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

0.001

0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURA TION TIME (s)

1

Fig. 11 Transient Thermal Response

Ordering Information (Note 7)

Part Number Case Packaging

DMN2020LSN-7 SC-59 3000/Tape & Reel

Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

N1A

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2020LSN

Document number: DS31946 Rev. 3 - 2

N1A = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

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Package Outline Dimensions

NEW PRODUCT

K

J

Suggested Pad Layout

Z

DMN2020LSN

A

Dim Min Max Typ

A 0.35 0.50 0.38

C

B

G

H

N

D

Y

L

X E

M

C

B 1.50 1.70 1.60
C 2.70 3.00 2.80
D - - 0.95
G - - 1.90
H 2.90 3.10 3.00

J 0.013 0.10 0.05

K 1.00 1.30 1.10

L 0.35 0.55 0.40
M 0.10 0.20 0.15
N 0.70 0.80 0.75

α

All Dimensions in mm

Dimensions Value (in mm)

SC-59

0° 8° -

Z 3.4
X 0.8
Y 1.0
C 2.4
E 1.35

DMN2020LSN

Document number: DS31946 Rev. 3 - 2

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August 2011

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

NEW PRODUCT

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN2020LSN

DMN2020LSN

Document number: DS31946 Rev. 3 - 2

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