Diodes DMN2020LSN User Manual

θ

g

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2KV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

TOP VIEW

DMN2020LSN

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SC-59

• Case Material - Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 2

• Ordering Information: See Page 2

• Weight: 0.014 grams (approximate)

SC-59

Drain

D

Gate

Gate

Protection

Diode

EQUIVALENT CIRCUIT

Source

G

TOP VIEW

Pin Out Confi

S

uration

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage Continuous

T

Continuous Drain Current

Steady

State

= 25°C

A

T

= 85°C

A

Pulsed Drain Current (Note 4)

V

DSS

V

GSS

I

D

I

DM

20 V

±12 V

6.9

4.5

A

30 A

Thermal Characteristics

Characteristic Symbol Value Units

Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

P

D

R

JA

T

, T

J

STG

DMN2020LSN

Document number: DS31946 Rev. 3 - 2

1 of 6

www.diodes.com

0.61 W
204

-55 to +150

°C /W

°C

August 2011

© Diodes Incorporated

)

g

g

R

C

U

R

R

T

R

CUR

R

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage I

20 - - V VGS = 0V, ID = 250μA

DSS

- - 1.0

DSS

- - ±10

GSS

VDS = 20V, VGS = 0V

μA

VGS = ±12V, VDS = 0V

μA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V

Static Drain-Source On-Resistance R

0.5 1.0 1.5 V VDS = VGS, ID = 250μA

GS(th

-

DS (ON)

13
18

20
28

V

mΩ

GS

VGS = 2.5V, ID = 8.3A
Forward Transfer Admittance |Yfs| - 16 - S VDS = 5V, ID = 9.4A
Diode Forward Voltage VSD - 0.7 1.2 V VGS = 0V, IS = 1.3A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance C
Output Capacitance C

NEW PRODUCT

Reverse Transfer Capacitance C
Gate Resistance Rg
Total Gate Charge Qg - 11.6 - nC
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Turn-On Rise Time tr - 12.49 - ns
Turn-Off Delay Time t

- 1149 - pF

iss

- 157 - pF

oss

- 142 - pF

rss

- 2.7 - nC

s

- 3.4 - nC

d

D(on)

D(off)

- 1.51 -

Ω

- 11.67 - ns

- 35.89 - ns

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

V

GS

I

= 9.4A

D

V

DD

R

GEN

Turn-Off Fall Time tf - 12.33 - ns

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

(A)
EN

20

15

10

V = 8.0V

V = 4.5V

GS

V = 3.0V

GS

V = 2.5V

GS

GS

V = 2.0V

GS

(A)
EN

20

15

10

V = 10V

DS

DMN2020LSN

= 4.5V, ID = 9.4A

= 10V, VGS = 0V,

= 4.5V, VDS = 10V,

= 10V, VGS = 4.5V,

= 6Ω, ID = 1A

AIN

D

I, D

5

V = 1.8V

GS

V = 1.5V

GS

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Character i st ics

AIN

T = 150°C

D

I, D

5

0

0 0.5 1 1.5 2 2.5 3

V , GATE SOURCE VOLT AGE (V)

GS

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

DMN2020LSN

Document number: DS31946 Rev. 3 - 2

2 of 6

www.diodes.com

August 2011

© Diodes Incorporated