Diodes DMN2019UTS User Manual

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Page 1

NEW PRODUCT

Product Summary

max

TA = 25°C

5.4 A

5.0 A

4.6 A

3.5 A

(BR)DSS

20V

18.5m @ V

21m @ VGS = 4.5V

24m @ VGS = 2.5V

31m @ VGS = 1.8V

DS(ON)

max

= 10V

Description

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

• Power management functions

• Load Switch

ESD PROTECTED TO 2kV

Top View

TSSOP-8

1 2 3 4

Bottom View

DMN2019UTS

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected up to 2KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: TSSOP-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.039 grams (approximate)

D S1

S1 G1

Top View

Pin Configuration

D S2

7 6 5

N-Channel N-Channel

S1 S2

Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging

DMN2019UTS-13 TSSOP-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2019UTS

Document number: DS35556 Rev. 2 - 2

N2019U

YY WW

Top View

www.diodes.com

Logo

Part no

Xth week: 01~53

Year: “12” = 2012

1 of 6

December 2012

Page 2

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 2.5V

Continuous Body Diode Forward Current (Note 5)

Steady

State

Steady

State

Steady

Stat

Pulsed Drain Current (Note 5) 10s pulse, duty cycle = 1%

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range

= +25°C

= +70°C

= +25°C

= +70°C

= +25°C

J, TSTG

DMN2019UTS

DSS

GSS

-55 to +150 °C

20 V

±12 V

5.4

4.3

4.6

3.7

0.9 A

30 A

0.78 W 161 °C/W

26 °C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Breakdown Voltage

DSS

GSS

DSS

SGS

20 - - V

- - 1.0 µA

- - 10 µA

±12 - - V

VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V

VDS = 0V, IG = ±250μA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

GS(th

DS (ON)

|Y V

0.35 - 0.95 V

15.5 18.5

16.5 21

- 13 - S

- 0.7 1.0 V

17 21.5

17.5 22.5 18 23 19 24 24 31

VDS = VGS, ID = 250A

= 10V, ID = 7A

= 4.5V, ID = 7A

= 4.0V, ID = 7A

m

= 3.6V, ID = 6.5A

= 3.1V, ID = 6.5A

= 2.5V, ID = 5.5A

= 1.8V, ID = 3.5A

VDS = 5V, ID = 5A

VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C C C

Q Q Q

D(on)

D(off)

iss

oss

rss

143

74 29

- pF

- 202 -

8.8

1.4

3.0

78 562 234

- nC

- ns

= 10V, VGS = 0V,

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 10V,

= 6.5A

= 10V, VGS = 4.5V,

= 10, RG = 6

DMN2019UTS

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Page 3

RAIN CUR

CUR

RENT

OUR

CE ON-R

TANC

OUR

NEW PRODUCT

DMN2019UTS

V = 8V

V = 4.5V

(A)

V = 3.0V

V = 2.5V

V = 2.0V

V = 5V

(A)

AIN

I, D

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

0 0.5 1 1.5 2

V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteri stic

0.04

E ( )

V = 4.5V

I, D

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristic

0.05

0.04

V = 1.5V

0.03

ESIS

0.03

0.02

0.01

V = 1.8V

V = 2.5V

V = 4.5V

AIN-S

, D

0.02

0.01

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.6

1.4

V = 2.5V

I = 5.5A

1.2

AIN-S

1.0

, D

DSON

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Fig. 5 On-Resistance Variation with Temperature

V = 4.5V

I = 10A

DS(ON)

0.04

0.03

0.02

DSON

ON-RESISTANCE ( )

R , DRAIN-SOURCE

0.01

048121620

I , DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

V = 2.5V

I = 5.5A

V = 4.5V

I = 10A

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

Fig. 6 On-Resistance Variation with Temperature

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OUR

CE C

URR

C, CAPACITANC

TANC

NEW PRODUCT

DMN2019UTS

1.4

1.2

1.0

0.8

0.6

0.4

I = 250µA

I = 1mA

(A)

I, S

T = 25°C

0.2

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

1,000

f = 1MHz

0 0.2 0.4 0.6 0.8 1 1.2

V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

100

DS(on)

Limited

)

E (p

100

iss

oss

rss

048121620

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Total Capacitance

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

0.1

-I , DRAIN CURRENT (A)

P = 100µs

P = 10sWµ

0.01

0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V)

-DS

Fig. 10 Safe Operation Area

T = 150°C

J(max)

T = 25°C

Single Pulse

D = 0.7

D = 0.5

D = 0.3

ESIS

0.1

MAL E

ANSIEN

r(t),

0.01

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) *

R = 157°C/W

P(pk)

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

θθJA

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

t , PULSE DURATION TIME (s)

Fig. 11 Transient Thermal Response

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NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Dim Min Max Typ

See Detail C

Gauge plane

Detail C

a 0.09 A

A1 0.05 0.15 A2 0.825 1.025 0.925

b 0.19 0.30 c 0.09 0.20 D 2.90 3.10 3.025

E1 4.30 4.50 4.425

L 0.45 0.75 0.60 All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMN2019UTS

Document number: DS35556 Rev. 2 - 2

C3 C1

Dimensions Value (in mm)

X 0.45

Y 1.78 C1 7.72 C2 0.65 C3 4.16

G 0.20

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TSSOP-8

1.20

−

− −

0.65

6.40

DMN2019UTS

−

December 2012

Page 6

NEW PRODUCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMN2019UTS

Document number: DS35556 Rev. 2 - 2

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