Diodes DMN2019UTS User Manual

NEW PRODUCT

Product Summary

max

I

D

TA = 25°C

5.4 A

5.0 A

4.6 A

3.5 A

V

(BR)DSS

20V

R

18.5m @ V

21m @ VGS = 4.5V

24m @ VGS = 2.5V

31m @ VGS = 1.8V

DS(ON)

max

= 10V

GS

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

• Power management functions

• Load Switch

ESD PROTECTED TO 2kV

Top View

TSSOP-8

1
2
3
4

Bottom View

DMN2019UTS

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected up to 2KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: TSSOP-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.039 grams (approximate)

DD

D
S1

S1
G1

Top View

Pin Configuration

D
S2

S2

G2

8

G1

7
6
5

N-Channel N-Channel

G2

S1 S2

Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging

DMN2019UTS-13 TSSOP-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2019UTS

Document number: DS35556 Rev. 2 - 2

8

5

N2019U

YY WW

1

Top View

4

www.diodes.com

Logo

Part no

Xth week: 01~53

Year: “12” = 2012

1 of 6

December 2012

© Diodes Incorporated

θ

θ

)

g

g

g

g

r

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 2.5V

Continuous Body Diode Forward Current (Note 5)

Steady

State

Steady

State

Steady

Stat

Pulsed Drain Current (Note 5) 10s pulse, duty cycle = 1%

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

P

R

R

T

J, TSTG

DMN2019UTS

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

D

JA

JC

-55 to +150 °C

20 V

±12 V

5.4

4.3

4.6

3.7

A

A

0.9 A

30 A

0.78 W
161 °C/W

26 °C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Breakdown Voltage

BV

BV

I

DSS

I

GSS

DSS

SGS

20 - - V

- - 1.0 µA

- - 10 µA

±12 - - V

VGS = 0V, ID = 250A
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V

VDS = 0V, IG = ±250μA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.35 - 0.95 V

15.5 18.5

-

16.5 21

-

-

-

-

-

-

|

- 13 - S

- 0.7 1.0 V

17 21.5

17.5 22.5
18 23
19 24
24 31

VDS = VGS, ID = 250A

= 10V, ID = 7A

V

GS

V

= 4.5V, ID = 7A

GS

V

= 4.0V, ID = 7A

m

GS

V

= 3.6V, ID = 6.5A

GS

V

= 3.1V, ID = 6.5A

GS

V

= 2.5V, ID = 5.5A

GS

V

= 1.8V, ID = 3.5A

GS

VDS = 5V, ID = 5A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

iss

oss

rss

t

t

s

d

f

143

-

-

-

74
29

- pF

- pF

- pF

- 202 -

8.8

-

1.4

-

3.0

-

-

-

-

-

53

78
562
234

- nC

- nC

- nC

- ns

- ns

- ns

- ns

= 10V, VGS = 0V,

V

DS

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 10V,

V

GS

= 6.5A

I

D

V

= 10V, VGS = 4.5V,

DD

R

= 10, RG = 6

L

DMN2019UTS

Document number: DS35556 Rev. 2 - 2

2 of 6

www.diodes.com

December 2012

© Diodes Incorporated