Diodes DMN2016UTS User Manual

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Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected Up To 2KV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

TOP VIEW

BOTTOM VIEW

TSSOP-8L

1
2
3
4

DMN2016UTS

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: TSSOP-8L

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.039 grams (approximate)

D1 D2

Top View

D
S2

S2

G2

D
S1

S1
G1

Pin Configuratio n

G1

8
7
6
5

S1 S2

G2

Internal Schematic

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 3)

Steady

State

Pulsed Drain Current (Note 4)

Thermal Characteristics

Power Dissipation (Note 3)

Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

DMN2016UTS

Document number: DS31995 Rev. 1 - 2

Characteristic Symbol Value Unit

= 25°C (Note 3) R

A

T

= 25°C

A

T

= 85°C

A

V

DSS

V

GSS

I

D

I

DM

P

θJA

T

, T

J

1 of 6

www.diodes.com

D

STG

20 V
±8 V

8.58

5.73

A

36 A

0.88 W

141.57 °C/W

-55 to +150 °C

December 2009

© Diodes Incorporated

)

g

g

g

g

r

R

N

CUR

REN

T

RAIN C

URREN

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance

NEW PRODUCT

Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

30

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C

C

C

R
Q

Q

Q

t

D(on)

t

D(off)

DSS

fs

SD

iss

oss

rss

t

t

f

DMN2016UTS

20 - - V

- - 1.0

- - ±10

0.4 0.72 1.0 V

-

|

s
d

- 19 - S

- 0.65 1.2 V

- 1495 -

- 161 -

- 152 -

- 1.42 -

- 16.5 -

- 2.5 -

- 3.2 -

- 10.39 -

- 11.66 -

- 59.38 -

- 16.27 -

11
13

14.5

16.5

30

VGS = 0V, ID = 250μA

μA
μA

= 20V, VGS = 0V

V

DS

= ±8V, VDS = 0V

V

GS

VDS = VGS, ID = 250μA

= 4.5V, ID = 9.4A

V

mΩ

GS

VGS = 2.5V, ID = 8.3A
VDS = 5V, ID = 9.4A
VGS = 0V, IS = 1.3A

pF
pF
pF

Ω
nC
nC
nC

= 10V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 10V,

V

GS

= 9.4A

I

D

ns

ns

ns

= 10V, VGS = 4.5V,

V

DD

R

= 6Ω, ID = 1A, R1 = 10Ω

GEN

ns

V = 4.5V

25

(A)

20

V = 1.5V

GS

15

AI

V = 3.0V

GS

V = 2.5V

GS

V = 2.0V

GS

GS

V = 1.5V

GS

10

D

I, D

5

V = 1.2V

0

00.511.52
V , DRAIN-SOURC E VOLTAGE (V)

DS

GS

Fig. 1 Typical Output C har acteristics

(A)

I, D

V = 5V

25

DS

20

15

10

D

5

0

0 0.5 1 1.5 2 2.5 3

T = 150°C

A

T = 125°C

A

T = 85°C

A

V , GATE SOURCE VOLTAGE (V)

GS

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

DMN2016UTS

Document number: DS31995 Rev. 1 - 2

2 of 6

www.diodes.com

December 2009

© Diodes Incorporated