Diodes DMN2016LHAB User Manual

Product Summary

V

R

(BR)DSS

15.5m @ V

16.5m @ VGS = 4.0V

20V

19m @ VGS = 3.1V
20m @ VGS = 2.5V
30m @ VGS = 1.8V

DS(on)max

GS

= 4.5V

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

ADVANCE INFORMATION

 Power Management Functions

NEW PRODUCT

 Battery Pack

 Load Switch

ESD PROTECTED TO 2k V

G1

7.5A

7.3A

6.9A

6.7A

5.4A

S1

I

D

S1

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

 Case: U-DFN2030-6

 Case Material: Molded Plastic, “Green” Molding Compound. UL

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – NiPdAu over Copper leadframe. Solderable

 Weight: 0.012 grams (approximate)

U-DFN2030-6

D1/D2

Bottom View

Flammability Classification Rating 94V-0

per MIL-STD-202, Method 208

G2

S2

S2

e4

Bottom Drain Contact

S1 S1 G1

S2 S2 G2

Top View

Equivalent Circuit

DMN2016LHAB

Ordering Information (Note 4)

Part Number Case Packaging

DMN2016LHAB-7 U-DFN2030-6 3000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

DMN2016LHAB

Document number: DS36133 Rev. 4 - 2

YYWW

26W

www.diodes.com

26W = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 12 for 2012)
WW = Week code (01 to 53)

1 of 6

March 2013

© Diodes Incorporated

)

g

g

g

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1% )

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

DMN2016LHAB

Characteristic Symbol Value Unit

20 V

±12 V

7.5

5.8

7.7

6.0

A

A

45 A

1.2

0.75
106

1.65

1

W

°C/W

W

78

°C/W

11.4

Steady

State

t < 10s

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

TA = +70°C

Steady State

t < 10s 100

= +25°C

T

A

TA = +70°C

Steady State

t < 10s 72

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

I

D

I

D

I

DM

-55 to 150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 — — V
— — 1.0 μA
— — ±10 μA

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V

VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 0.71 1.1 V
13 15.5

13.5 16.5

—

14 19
15 20
21 30

— 25 — S

|

— 0.75 1.0 V

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 4.0A

GS

V

= 4.0V, ID = 4.0A

GS

m

V

= 3.1V, ID = 4.0A

GS

V

= 2.5V, ID = 4.0A

GS

V

= 1.8V, ID = 3.5A

GS

VDS = 5V, ID = 6A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 2.5V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6.

7. Repetitive rating, pulse width limited by junction temperature

Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad

8. Guaranteed by design. Not subject to product testing

DMN2016LHAB

Document number: DS36133 Rev. 4 - 2

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

www.diodes.com

— 1550 —
— 166 —
— 145 —
— 1.37 —
— 8.4 —
— 16 —
— 2.3 —
— 2.5 —
— 6.9 —
— 15.5 —
— 40.9 —
— 12 —

2 of 6

pF
pF
pF

= 10V, VGS = 0V,

V

DS

f = 1.0MHz

 VDS = 0V, VGS = 0V, f = 1MHz
nC
nC

V

= 10V, ID = 6A

nC

DS

nC
ns
ns
ns

= 10V, RL = 1.7,

V

DD

= 5.0V, RG = 3

V

GS

ns

March 2013

© Diodes Incorporated