Diodes DMN2016LFG User Manual

Page 1
Product Summary
V
R
(BR)DSS
20V
18mΩ @ V 30mΩ @ VGS = 1.8V
DS(on) max
= 4.5V
GS
Description and Applications
This new generation MOSFET has been designed to minimize the on­state resistance (R performance, making it ideal for high efficiency power management applications.
Power management functions
Battery Pack
Load Switch
ESD PROTECTED TO 2kV
) and yet maintain superior switching
DS(on)
U-DFN3030-8
Top View
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
I
D
TA = 25°C
5.2A
4.0A
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.0172 grams (approximate)
5678
4321
Bottom View Bottom View
Pin Configuration
D1/D2
DMN2016LFG
5678
S1G1S2G2
4321
Top View
Equivalent Circuit
Ordering Information (Note 6)
Part Number Case Packaging
DMN2016LFG-7 U-DFN3030-8 3000 / Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
YYWW
N20
DMN2016LFG
Document number: DS32053 Rev. 3 - 2
N20 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 09 for 2009) WW = Week code (01 to 53)
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Page 2
)
g
g
g
g
r
DMN2016LFG
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 4) Pulsed Drain Current (10μs pulse, duty cycle = 1% )
Steady
State
T
= 25°C
A
= 70°C
T
A
V V
DSS GSS
I
I
DM
D
20 V ±8 V
5.2
4.1
A
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @T Thermal Resistance, Junction to Case @T Operating and Storage Temperature Range
= 25°C (Note 4) R
A
= 25°C (Note 4) R
A
P
D
θJA θJC
T
, T
J
STG
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage
BV BV
DSS
I
GSS
DSS GSO
20 - - V ±8
- - 1.0
- - ±10
- - V
μA μA
ON CHARACTERISTICS (Note 5) Gate Threshold Voltage
V
GS(th
0.4 0.71 1.1 V 13 18
13.5 19
Static Drain-Source On-Resistance
R
DS (ON)
-
14 20.5
mΩ 15 22 21 30
Forward Transfer Admittance Diode Forward Voltage
|
|Y
fs
V
SD
- 25 - S
- 0.75 1.0 V DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature
6. Guaranteed by design. Not subject to product testing
C C C
R
Q Q Q
t
D(on)
t
D(off)
iss
oss
rss
t
t
s d
f
- 1472 -
- 311 -
- 141 -
- 1.46 -
- 16.0 -
- 36.6 -
- 2.1 -
- 2.6 -
- 13.2 -
- 84.5 -
- 46.8 -
pF pF pF
Ω nC nC nC
ns
ns
ns
ns
DMN2016LFG
Document number: DS32053 Rev. 3 - 2
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0.77 W 169 °C/W
15.8 °C/W
-55 to +150 °C
VGS = 0V, ID = 250μA
= 0V, IG = ±250μA
V
DS
VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250μA V
= 4.5V, ID = 6A
GS
= 4.0V, ID = 6A
V
GS
= 3.1V, ID = 6A
V
GS
= 2.5V, ID = 6A
V
GS
= 1.8V, ID = 6A
V
GS
VDS = 5V, ID = 6A VGS = 0V, IS = 1A
= 10V, VGS = 0V,
V
DS
f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz V
= 4.5V, VDS = 10V,
GS
= 6A
I
D
V
= 10V, VGS = 5V,
DD
= 3Ω, RL = 1.7
R
GEN
January 2012
© Diodes Incorporated
Page 3
R
C
URRENT
R
CUR
RENT
R
RAIN-SOUR
CE O
N-R
TAN
C
R
R
OUR
ON-R
R
R
OUR
C
R
R
OUR
C
O
R
TANC
DMN2016LFG
50 45
40 35
(A)
(A)
V = 5.0VDS
30 25 20
AIN
15
D
I, D
10
5 0
0 0.5 1.0 1.5 2.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig.1 Typical Output Characteristic
Ω
E ( )
AIN
D
I, D
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE
GS
Fig.2 Typical Transfer Characteristics
0.04
Ω
V = 4.5V
GS
ESIS
V = 1.8VGS
V = 2.5VGS
V = 4.5VGS
, D
DS(ON)
01020304050
I , DRAIN-SOURCE CURRENTD Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
E
V=V
4.5
GS
I= 5A
D
V=V
AIN-S , D
DS(ON)
1.4
1.2
1.0
ON-RESISTA NCE (NORMALIZED)
0.8
8
GS
I= 10A
D
0.03
ESISTANCE ( )
0.02
CE
AIN-S
0.01
T = 150°C
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
, D
DS(ON)
0
0 5 10 15 20 25 30
I , DRAIN CURRENT
D
Fig. 4 Typical On-Resistance vs.
Drain Current and Temper ature
0.03
Ω
E ( )
V = 4.5V
ESIS
0.02
GS
I= 5A
D
N­E
V=V
8
GS
I= 10A
D
0.01
AIN-S , D
A
DS(ON)
0.6 50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 5 On-Resistance Variation with T emperature
0
-50-25 0 255075100125150 T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 6 On-Resistance Variation with Temperature
DMN2016LFG
Document number: DS32053 Rev. 3 - 2
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Page 4
GATE THRESH
O
O
TAG
OUR
CE CUR
REN
T
C
UNC
TIO
N CAPACITAN
C
GATE THRESH
O
OLTAG
T
R
T T
HER
R
TANC
DMN2016LFG
1.5
E (V)
1.2
L
0.9
LD V
I= 1mA
D
20
15
(V)
T= 25°C
10
A
0.6
I = 250µA
D
5
S
0.3
GS(th)
V,
0
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 7 Gate Threshold V ariation vs. Am bi ent Te m perature
10,000
E (pF)
C
1,000
iss
I, S
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
V = 10V
E (V)
DS
I=A
6
D
LD V
C
oss
, J
100
T
f = 1MHz
10
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Ca pacitance
1
D = 0.9 D = 0.7
E
D = 0.5 D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
C
rss
GS
V
0 5 10 15 20 25 30 35 40
Q (nC)
, TOTAL GATE CHARGE
g
Fig. 10 Gate Charge
R = r * R
θ
JA(t) (t)
R = 160 C/W
JA
Duty Cycle, D = t1/t2
θθJA
°
t1, PULSE DURATION TIME (sec)
Fig. 11 Transie nt Thermal Resistance
DMN2016LFG
Document number: DS32053 Rev. 3 - 2
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Page 5
Package Outline Dimensions
A
E
Suggested Pad Layout
A1
e
E2
D2
D
X2
YC
DMN2016LFG
SEATING PLANE
A3
b
0
0
2
.
0
R
L
Z
Dimensions Value (in mm)
Z 2.59
X1
G
G 0.11 X1 2.49 X2 0.65
Y 0.39
C 0.65
U-DFN3030-8
Dim Min Max Typ
A 0.57 0.63 0.60
A1 0 0.05 0.02 A3
b 0.29 0.39 0.34 D 2.90 3.10 3.00
D2 2.19 2.39 2.29
e
E 2.90 3.10 3.00
E2 1.64 1.84 1.74
L 0.30 0.60 0.45
All Dimensions in mm
0.15
0.65
DMN2016LFG
Document number: DS32053 Rev. 3 - 2
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMN2016LFG
DMN2016LFG
Document number: DS32053 Rev. 3 - 2
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