This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
• Power management functions
• Battery Pack
• Load Switch
ADVANCE INFORMATION
ESD PROTECTED TO 2kV
) and yet maintain superior switching
DS(on)
U-DFN3030-8
Top View
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
I
D
TA = 25°C
5.2A
4.0A
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate
• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: U-DFN3030-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.0172 grams (approximate)
5678
4321
Bottom ViewBottom View
Pin Configuration
D1/D2
DMN2016LFG
5678
S1G1S2G2
4321
Top View
Equivalent Circuit
Ordering Information (Note 6)
Part Number Case Packaging
DMN2016LFG-7 U-DFN3030-8 3000 / Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
YYWW
N20
DMN2016LFG
Document number: DS32053 Rev. 3 - 2
N20 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 09 for 2009)
WW = Week code (01 to 53)
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4)
Pulsed Drain Current (10μs pulse, duty cycle = 1% )
Steady
State
T
= 25°C
A
= 70°C
T
A
V
V
DSS
GSS
I
I
DM
D
20 V
±8 V
5.2
4.1
A
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Thermal Resistance, Junction to Case @T
Operating and Storage Temperature Range
ADVANCE INFORMATION
= 25°C (Note 4) R
A
= 25°C (Note 4) R
A
P
D
θJA
θJC
T
, T
J
STG
Electrical Characteristics@T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
BV
BV
DSS
I
GSS
DSS
GSO
20 - - V
±8
- - 1.0
- - ±10
- - V
μA
μA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th
0.4 0.71 1.1 V
13 18
13.5 19
Static Drain-Source On-Resistance
R
DS (ON)
-
14 20.5
mΩ
15 22
21 30
Forward Transfer Admittance
Diode Forward Voltage
|
|Y
fs
V
SD
- 25 - S
- 0.75 1.0 V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature
6. Guaranteed by design. Not subject to product testing
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
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website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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ADVANCE INFORMATION
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.