Diodes DMN2016LFG User Manual

Product Summary

V

R

(BR)DSS

20V

18mΩ @ V
30mΩ @ VGS = 1.8V

DS(on) max

= 4.5V

GS

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Power management functions

• Battery Pack

• Load Switch

ADVANCE INFORMATION

ESD PROTECTED TO 2kV

) and yet maintain superior switching

DS(on)

U-DFN3030-8

Top View

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

I

D

TA = 25°C

5.2A

4.0A

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-DFN3030-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.0172 grams (approximate)

5678

4321

Bottom View Bottom View

Pin Configuration

D1/D2

DMN2016LFG

5678

S1G1S2G2

4321

Top View

Equivalent Circuit

Ordering Information (Note 6)

Part Number Case Packaging

DMN2016LFG-7 U-DFN3030-8 3000 / Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

YYWW

N20

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

N20 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 09 for 2009)
WW = Week code (01 to 53)

1 of 6

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January 2012

© Diodes Incorporated

)

g

g

g

g

r

DMN2016LFG

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4)
Pulsed Drain Current (10μs pulse, duty cycle = 1% )

Steady

State

T

= 25°C

A

= 70°C

T

A

V
V

DSS
GSS

I

I

DM

D

20 V
±8 V

5.2

4.1

A

30 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Thermal Resistance, Junction to Case @T
Operating and Storage Temperature Range

ADVANCE INFORMATION

= 25°C (Note 4) R

A

= 25°C (Note 4) R

A

P

D

θJA
θJC

T

, T

J

STG

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV
BV

DSS

I

GSS

DSS
GSO

20 - - V
±8

- - 1.0

- - ±10

- - V

μA
μA

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

V

GS(th

0.4 0.71 1.1 V
13 18

13.5 19

Static Drain-Source On-Resistance

R

DS (ON)

-

14 20.5

mΩ
15 22
21 30

Forward Transfer Admittance
Diode Forward Voltage

|

|Y

fs

V

SD

- 25 - S

- 0.75 1.0 V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.

5. Repetitive rating, pulse width limited by junction temperature

6. Guaranteed by design. Not subject to product testing

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

iss

oss

rss

t

t

s
d

f

- 1472 -

- 311 -

- 141 -

- 1.46 -

- 16.0 -

- 36.6 -

- 2.1 -

- 2.6 -

- 13.2 -

- 84.5 -

- 46.8 -

pF
pF
pF

Ω
nC
nC
nC

ns

ns

ns

ns

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

2 of 6

www.diodes.com

0.77 W
169 °C/W

15.8 °C/W

-55 to +150 °C

VGS = 0V, ID = 250μA

= 0V, IG = ±250μA

V

DS

VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 6A

GS

= 4.0V, ID = 6A

V

GS

= 3.1V, ID = 6A

V

GS

= 2.5V, ID = 6A

V

GS

= 1.8V, ID = 6A

V

GS

VDS = 5V, ID = 6A
VGS = 0V, IS = 1A

= 10V, VGS = 0V,

V

DS

f = 1.0MHz
VDS =0V, VGS = 0V, f = 1MHz
V

= 4.5V, VDS = 10V,

GS

= 6A

I

D

V

= 10V, VGS = 5V,

DD

= 3Ω, RL = 1.7Ω

R

GEN

January 2012

© Diodes Incorporated