Diodes DMN2016LFG User Manual

Product Summary

V

R

(BR)DSS

20V

18mΩ @ V 30mΩ @ VGS = 1.8V

DS(on) max

= 4.5V

GS

Description and Applications

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

• Power management functions

• Battery Pack

• Load Switch

ADVANCE INFORMATION

ESD PROTECTED TO 2kV

) and yet maintain superior switching

DS(on)

U-DFN3030-8

Top View

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

I

D

TA = 25°C

5.2A

4.0A

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-DFN3030-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.0172 grams (approximate)

5678

4321

Bottom View Bottom View

Pin Configuration

D1/D2

DMN2016LFG

5678

S1G1S2G2

4321

Top View

Equivalent Circuit

Ordering Information (Note 6)

Part Number Case Packaging

DMN2016LFG-7 U-DFN3030-8 3000 / Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

YYWW

N20

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

N20 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 09 for 2009) WW = Week code (01 to 53)

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)

g

r

DMN2016LFG

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 4) Pulsed Drain Current (10μs pulse, duty cycle = 1% )

Steady

State

T

= 25°C

A

= 70°C

T

A

V V

DSS GSS

I

DM

D

20 V ±8 V

5.2

4.1

A

30 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @T Thermal Resistance, Junction to Case @T Operating and Storage Temperature Range

ADVANCE INFORMATION

= 25°C (Note 4) R

A

= 25°C (Note 4) R

A

P

D

θJA θJC

T

, T

J

STG

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage

BV BV

DSS

I

GSS

DSS GSO

20 - - V ±8

- - 1.0

- - ±10

- - V

μA μA

ON CHARACTERISTICS (Note 5) Gate Threshold Voltage

V

GS(th

0.4 0.71 1.1 V 13 18

13.5 19

Static Drain-Source On-Resistance

R

DS (ON)

-

14 20.5

mΩ 15 22 21 30

Forward Transfer Admittance Diode Forward Voltage

|

|Y

fs

V

SD

- 25 - S

- 0.75 1.0 V DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.

5. Repetitive rating, pulse width limited by junction temperature

6. Guaranteed by design. Not subject to product testing

C C C

R

Q Q Q

t

D(on)

t

D(off)

iss

oss

rss

t

s d

f

- 1472 -

- 311 -

- 141 -

- 1.46 -

- 16.0 -

- 36.6 -

- 2.1 -

- 2.6 -

- 13.2 -

- 84.5 -

- 46.8 -

pF pF pF

Ω nC nC nC

ns

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

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0.77 W 169 °C/W

15.8 °C/W

-55 to +150 °C

VGS = 0V, ID = 250μA

= 0V, IG = ±250μA

V

DS

VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V

VDS = VGS, ID = 250μA V

= 4.5V, ID = 6A

GS

= 4.0V, ID = 6A

V

GS

= 3.1V, ID = 6A

V

GS

= 2.5V, ID = 6A

V

GS

= 1.8V, ID = 6A

V

GS

VDS = 5V, ID = 6A VGS = 0V, IS = 1A

= 10V, VGS = 0V,

V

DS

f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz V

= 4.5V, VDS = 10V,

GS

= 6A

I

D

V

= 10V, VGS = 5V,

DD

= 3Ω, RL = 1.7Ω

R

GEN

January 2012

R

C

URRENT

R

CUR

RENT

R

RAIN-SOUR

CE O

N-R

TAN

C

R

OUR

ON-R

R

OUR

C

R

OUR

C

O

R

TANC

DMN2016LFG

50 45

40 35

(A)

V = 5.0VDS

30 25 20

AIN

15

D

I, D

10

5 0

0 0.5 1.0 1.5 2.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig.1 Typical Output Characteristic

ADVANCE INFORMATION

Ω

E ( )

AIN

D

I, D

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0 0.5 1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE

GS

Fig.2 Typical Transfer Characteristics

0.04

Ω

V = 4.5V

GS

ESIS

V = 1.8VGS

V = 2.5VGS

V = 4.5VGS

, D

DS(ON)

01020304050

I , DRAIN-SOURCE CURRENTD Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.8

1.6

E

V=V

4.5

GS

I= 5A

D

V=V

AIN-S , D

DS(ON)

1.4

1.2

1.0

ON-RESISTA NCE (NORMALIZED)

0.8

8

GS

I= 10A

D

0.03

ESISTANCE ( )

0.02

CE

AIN-S

0.01

T = 150°C

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN CURRENT

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temper ature

0.03

Ω

E ( )

V = 4.5V

ESIS

0.02

GS

I= 5A

D

NE

V=V

8

GS

I= 10A

D

0.01

AIN-S , D

A

DS(ON)

0.6 50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 5 On-Resistance Variation with T emperature

0

-50-25 0 255075100125150 T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 6 On-Resistance Variation with Temperature

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

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GATE THRESH

O

TAG

OUR

CE CUR

REN

T

C

UNC

TIO

N CAPACITAN

C

GATE THRESH

O

OLTAG

T

R

T T

HER

R

TANC

DMN2016LFG

1.5

E (V)

1.2

L

0.9

LD V

I= 1mA

D

20

15

(V)

T= 25°C

10

A

0.6

I = 250µA

D

5

S

0.3

GS(th)

V,

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 7 Gate Threshold V ariation vs. Am bi ent Te m perature

ADVANCE INFORMATION

10,000

E (pF)

C

1,000

iss

I, S

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

V = 10V

E (V)

DS

I=A

6

D

LD V

C

oss

, J

100

T

f = 1MHz

10

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Junction Ca pacitance

1

D = 0.9 D = 0.7

E

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

C

rss

GS

V

0 5 10 15 20 25 30 35 40

Q (nC)

, TOTAL GATE CHARGE

g

Fig. 10 Gate Charge

R = r * R

θ

JA(t) (t)

R = 160 C/W

JA

Duty Cycle, D = t1/t2

θθJA

°

t1, PULSE DURATION TIME (sec)

Fig. 11 Transie nt Thermal Resistance

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

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Package Outline Dimensions

ADVANCE INFORMATION

A

E

Suggested Pad Layout

A1

e

E2

D2

D

X2

YC

DMN2016LFG

SEATING PLANE

A3

b

0

2

.

0

R

L

Z

Dimensions Value (in mm)

Z 2.59

X1

G

G 0.11 X1 2.49 X2 0.65

Y 0.39

C 0.65

U-DFN3030-8

Dim Min Max Typ

A 0.57 0.63 0.60

A1 0 0.05 0.02 A3

⎯ ⎯

b 0.29 0.39 0.34 D 2.90 3.10 3.00

D2 2.19 2.39 2.29

e

⎯ ⎯

E 2.90 3.10 3.00

E2 1.64 1.84 1.74

L 0.30 0.60 0.45

All Dimensions in mm

0.15

0.65

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

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