Diodes DMN2015UFDE User Manual

DMN2015UFDE

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

D max

TA = +25°C

10.5A

9.4A

V

R

(BR)DSS

20V

Package

DS(ON) max

11.6mΩ @ V
15m @ VGS = 2.5V

= 4.5V

GS

U-DFN2020-6

Type E

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

ADVANCE INFORMATION

• General Purpose Interfacing Switch

• Power Management Functions

Features

• 0.6mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low Gate Threshold Voltage

• Low On-Resistance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

2

Mechanical Data

• Case: U-DFN2020-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0065 grams (approximate)

Drain

Pin1

U-DFN2020-6 Type E

Bottom View

Bottom View

Pin Out

Gate

Source

Equivalent Circuit

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Quantity per reel

DMN2015UFDE-7 N4 7 3,000

DMN2015UFDE-13 N4 13 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2015UFDE

D

atasheet number: DS35560 Rev. 9 - 2

N4

www.diodes.com

N4 = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

© Diodes Incorporated

July 2012

θ

)

g

g

g

)

r

)

r

r

DMN2015UFDE

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 2.5V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current

Steady

State
t<10s

Steady

State
t<10s

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

20 V

±12 V

10.5

8.5

12.5

10.0

9.4

7.5

11.2

8.8

A

A

A

A

80 A

2.5 A

Thermal Characteristics

Characteristic Symbol Value Units

T

= +25°C

Total Power Dissipation (Note 5)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<10s 132

T

= +25°C

A

TA = +70°C

Steady state

t<10s 43

P

R

P

R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

0.66

0.42
189

2.03

1.31

W

°C/W

W

61

°C/W

9.3

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20
— —
— —

—

— V

1

μA

±100 nA

VGS = 0V, ID = 250A

= 16V, VGS = 0V

V

DS

= ±12V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 — 1.1 V

9.3 11.6

—

11.4 15
17 30
24 50

— 11.3 — S

|

— — 1.2 V

VDS = VGS, ID = 250A

= 4.5V, ID = 8.5A

V

GS

= 2.5V, ID = 8.5A

V

mΩ

GS

= 1.8V, ID = 5A

V

GS

= 1.5V, ID = 3A

V

GS

VDS = 10V, ID = 8.5A

VGS = 0V, IS = 8.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

8. Guaranteed by design. Not subject to production testing.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

DMN2015UFDE

D

atasheet number: DS35560 Rev. 9 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

T

r

Q

r

www.diodes.com

— 1779 —
— 175 —
— 154 —
— 0.94 —
— 19.7 —
— 45.6 —
— 2.9 —
— 3.8 —
— 7.4 —
— 16.8 —
— 43.6 —
— 10.9 —
— 8.6 —
— 3.7 —

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pF
pF
pF



= 10V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz
nC
nC

V

= 10V, ID = 8.5A

nC

DS

nC

ns
ns

V

= 10V, ID = 8.5A

DS

ns

= 4.5V, RG = 1.8

V

GS

ns
ns

I

= 8.5A, di/dt = 210A/s

F

nC

July 2012

© Diodes Incorporated