Diodes DMN2014LHAB User Manual

YYW

W

V

Product Summary

V

R

(BR)DSS

13mΩ @ V
14mΩ @ VGS = 4.0V

20V

17mΩ @ VGS = 3.1V
18mΩ @ VGS = 2.5V
28mΩ @ VGS = 1.8V

DS(on) max

= 4.5V

GS

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

ADVANCE INFORMATION

 Power management functions
 Battery Pack
 Load Switch

ESD PROTECTED TO 2k

U-DFN2030-6

Bottom View

I

D

TA = +25°C

9.0A

8.7A

8.0A

6.7A

6.3A

DMN2014LHAB

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-DFN2030-6
 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram Below
 Weight: 0.012 grams (approximate)

D1

Top View

G1

Gate Protect ion

Diode

G2

S1

Equivalent Circuit

Gate Protection

Diode

D2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMN2014LHAB-7 U-DFN2030-6 3000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN2014LHAB

Document number: DS36441 Rev. 1 - 2

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www.diodes.com

24W = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 12 for 2012)
WW = Week code (01 to 53)

1 of 6

December 2013

© Diodes Incorporated

)

g

g

g

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1% )

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

DMN2014LHAB

Characteristic Symbol Value Unit

20 V

±12 V

9.0

7.1

9.3

7.4

A

A

45 A

0.8

0.5

157

1.7

1.1

W

°C/W

W

73.7
°C/W

9.4

Steady

State

t < 10s

V

DSS

V

GSS

= +25°C

T

A

T

= +70°C

A

= +25C

T

A

= +70C

T

A

= +25°C

T

A

TA = +70°C

Steady State

t < 10s 148

= +25°C

T

A

TA = +70°C

Steady State

t < 10s 68

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

I

D

I

D

I

DM

-55 to 150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

20
— —
— —

— —

1.0 μA
±10 μA

V

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V

VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.3 0.71 1.1 V
10 13
11 14

—

12 17
13 18
19 28

— 25 — S

|

— 0.75 1.0 V

VDS = VGS, ID = 250μA

= 4.5V, ID = 4.0A

V

GS

V

= 4.0V, ID = 4.0A

mΩ

GS

V

= 3.1V, ID = 4.0A

GS

V

= 2.5V, ID = 4.0A

GS

V

= 1.8V, ID = 3.5A

GS

VDS = 5V, ID = 6A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 2.5V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6.

7. Repetitive rating, pulse width limited by junction temperature

Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad

8. Guaranteed by design. Not subject to product testing

DMN2014LHAB

Document number: DS36441 Rev. 1 - 2

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

www.diodes.com

— 1550 —
— 166 —
— 145 —
— 1.37 —
— 8.4 —
— 16 —
— 2.3 —
— 2.5 —
— 6.9 —
— 15.5 —
— 40.9 —
— 12 —

2 of 6

pF
pF
pF

Ω

= 10V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz
nC
nC

V

= 10V, ID = 6A

nC

DS

nC
ns
ns

V

= 10V, RL = 1.7Ω,

DD

V

ns

= 5.0V, RG = 3Ω

GS

ns

December 2013

© Diodes Incorporated