DMN2013UFX
Product Summary
I
max
D
V
R
(BR)DSS
11.5m @ V
20V
14m @ VGS = 2.5V
DS(ON)
max
= 4.5V
GS
TA = +25°C
10 A
9 A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
General Purpose Interfacing Switch
Power Management Functions
ESD PROTECTED
Top View
W-DFN5020-6
Bottom View
Dual N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: W-DFN5020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.03 grams (approximate)
S1S1G1
D1/D2
S2S2G2
Top View
Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN2013UFX-7 W-DFN5020-6 3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016
Code X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
FX = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
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March 2014
© Diodes Incorporated
)
g
g
g
)
r
)
DMN2013UFX
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Continuous Drain Current (Note 5) VGS = 2.5V
Pulsed Drain Current (Note 7)
Steady
State
Steady
State
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
V
V
DSS
GSS
I
I
I
DM
D
D
20 V
±8 V
10
8
9
7
A
A
80 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) R
Operating and Storage Temperature Range
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
P
D
JA
P
D
JA
T
, T
J
STG
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
20
— —
— —
— —
1 A
±10 A
V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.5 — 1.1 V
8.4
8.5
—
8.6
9.0
9.6
— 18.2 — S
|
— — 1.2 V
11.5
12.0
12.5
13.5
14.0
m
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 8V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
Q
Q
t
D(on
t
D(off
s
d
t
t
f
— 2607 —
— 255 —
— 236 —
— 1.2 —
— 32.4 —
— 57.4 —
— 3.5 —
— 4.0 —
— 8.6 —
— 20.3 —
— 42.5 —
— 13.7 —
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
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0.78 W
163 °C/W
2.14 W
59 °C/W
-55 to +150 °C
VGS = 0V, ID = 250A
VDS = 16V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250A
= 4.5V, ID = 8.5A
V
GS
V
= 4.0V, ID = 8.5A
GS
V
= 3.5V, ID = 8.5A
GS
V
= 3.1V, ID = 8A
GS
V
= 2.5V, ID = 8A
GS
VDS = 5V, ID = 4A
VGS = 0V, IS = 8.5A
V
= 10V, VGS = 0V,
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= 10V, ID = 8.5A
DS
= 10V, I
V
DS
= 4.5V, RG = 1.8
V
GS
= 8.5A
D
March 2014
© Diodes Incorporated
RAIN CUR
REN
T
RAIN CUR
REN
T
R
R
OUR
ON-R
R, D
RAIN-SOUR
CE O
N-R
TAN
C
R
R
OUR
ON-R
R
R
OUR
C
DMN2013UFX
30
V = 5.0VDS
25
(A)
I, D
20
15
10
D
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
5
0
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
0.03
(A)
30.0
25.0
20.0
V= 8.0V
GS
V= 4.5V
GS
V= 2.5V
GS
V= 2.0V
GS
V= 1.5V
15.0
10.0
D
I, D
5.0
V= 1.2V
V= 1.1V
0.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristic
0.012
GS
GS
GS
E ( )
0.025
ESIS
0.02
ESISTANCE ( )
0.011
0.01
V = 2.5VGS
CE
AIN-S
, D
ESISTANCE ( )
CE
AIN-S
, D
DS(ON)
0.009
0.008
V = 4.5VGS
V= 3.5V
GS
V = 4.0VGS
0.007
DS(ON)
0.006
1 6 11 16 21 26 31
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.02
V = 4.5VGS
0.018
0.016
T = 150°C
0.014
0.012
0.01
0.008
0.006
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.004
0.002
0
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
I= 8.5A
0.015
D
0.01
0.005
DS(ON)
0
12345678
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
2
V= V
4.5
GS
I= 10A
1.5
E
1
AIN-S
D
V=.5V
2
GS
I= 5A
D
, D
DS(ON)
0.5
ON-RESISTANCE (NORMALIZED)
0
-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
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R
RAIN-SOUR
CE O
N-R
TAN
C
OUR
CE CUR
RENT
C
UNC
TION CAPACITANC
GATE THR
H
O
OLT
G
DMN2013UFX
E ( )
V = 4.5V
ESIS
GS
I = 10A
D
V= V
2.5
GS
I = 5.0A
D
, D
DS(ON)
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variati on with Temperature
30
25
(A)
20
15
10
S
I, S
T = 150°C
A
T = 125°C
A
T= 85°C
A
T= 25°C
A
T = -55°C
A
5
1.2
1.1
1
0.9
0.8
I= 1mA
0.7
0.6
I = 250µA
D
D
0.5
0.4
0.3
0.2
GS(th)
0.1
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
C
iss
E (pF)
1000
C
oss
C
rss
100
, J
T
0
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
8
V= 10V
DS
I= A
8.5
D
E (V)
6
A
LD V
4
f = 1MHz
10
048121620
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
ES
2
GS
V
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Q(nC)
, TOTAL GATE CHARGE
g
Figure 11 Gate Charge
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
E
A1
e
D2
Pin 1 ID
Z b
D
A3
E2
L
Dim Min Max Typ
A 0.75 0.85 0.80
A1 0 0.05 0.02
A3
b 0.20 0.30 0.25
D 1.90 2.10 2.00
D2 1.40 1.60 1.50
e
E 4.90 5.10 5.00
E2 2.80 3.00 2.90
L 0.35 0.65 0.50
Z
W-DFN5020-6
All Dimensions in mm
0.15
0.50
0.375
DMN2013UFX
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
Y
X1 Y2
XC
X2
G
Y3
Dimensions Value (in mm)
C 0.50
G 0.35
X 0.35
X1 0.90
X2 1.80
Y 0.70
Y2 1.60
Y3 3.20
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DMN2013UFX
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
IMPORTANT NOTICE
LIFE SUPPORT
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
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