Diodes DMN2013UFX User Manual
DMN2013UFX
Product Summary
I
max
D
V
R
(BR)DSS
11.5m @ V
20V
14m @ VGS = 2.5V
DS(ON)
max
= 4.5V
GS
TA = +25°C
10 A
9 A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
General Purpose Interfacing Switch
Power Management Functions
ESD PROTECTED
Top View
W-DFN5020-6
Bottom View
Dual N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: W-DFN5020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.03 grams (approximate)
S1S1G1
D1/D2
S2S2G2
Top View
Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN2013UFX-7 W-DFN5020-6 3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016
Code X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
FX = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
1 of 6
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March 2014
© Diodes Incorporated
)
g
g
g
)
r
)
DMN2013UFX
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Continuous Drain Current (Note 5) VGS = 2.5V
Pulsed Drain Current (Note 7)
Steady
State
Steady
State
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
V
V
DSS
GSS
I
I
I
DM
D
D
20 V
±8 V
10
8
9
7
A
A
80 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) R
Operating and Storage Temperature Range
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
P
D
JA
P
D
JA
T
, T
J
STG
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
20
— —
— —
— —
1 A
±10 A
V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.5 — 1.1 V
8.4
8.5
—
8.6
9.0
9.6
— 18.2 — S
|
— — 1.2 V
11.5
12.0
12.5
13.5
14.0
m
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 8V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
Q
Q
t
D(on
t
D(off
s
d
t
t
f
— 2607 —
— 255 —
— 236 —
— 1.2 —
— 32.4 —
— 57.4 —
— 3.5 —
— 4.0 —
— 8.6 —
— 20.3 —
— 42.5 —
— 13.7 —
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
2 of 6
www.diodes.com
0.78 W
163 °C/W
2.14 W
59 °C/W
-55 to +150 °C
VGS = 0V, ID = 250A
VDS = 16V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250A
= 4.5V, ID = 8.5A
V
GS
V
= 4.0V, ID = 8.5A
GS
V
= 3.5V, ID = 8.5A
GS
V
= 3.1V, ID = 8A
GS
V
= 2.5V, ID = 8A
GS
VDS = 5V, ID = 4A
VGS = 0V, IS = 8.5A
V
= 10V, VGS = 0V,
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= 10V, ID = 8.5A
DS
= 10V, I
V
DS
= 4.5V, RG = 1.8
V
GS
= 8.5A
D
March 2014
© Diodes Incorporated
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