Page 1
Product Summary
I
V
R
(BR)DSS
20V
DS(ON) MAX
11m @ V
13m @ VGS = 2.5V
30m @ VGS = 1.8V
50m @ VGS = 1.5V
Package
= 4.5V
GS
U-DFN2020-6 10.5A
U-DFN2020-6 9.4A
U-DFN2020-6 6.5A
U-DFN2020-6 5.5A
D
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
General Purpose Interfacing Switch
Power Management Functions
ESD PROTECTED
U-DFN2020-6
Bottom View
DMN2013UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm
Low Gate Threshold Voltage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
2
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
Pin Out
e4
Gate
Gate
Protection
Diode
Equivalent Circuit
Drain
Source
Ordering Information (Note 5)
Part Number Compliance Case Quantity per reel
DMN2013UFDE-7 Standard U-DFN2020-6 3,000
DMN2013UFDEQ-7 Automotive U-DFN2020-6 3,000
DMN2013UFDE-13 Standard U-DFN2020-6 10,000
DMN2013UFDEQ-13 Automotive U-DFN2020-6 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
N6
www.diodes.com
N6 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
1 of 6
April 2013
© Diodes Incorporated
Page 2
)
g
g
g
)
r
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 4.5V
Continuous Drain Current (Note 7) VGS = 2.5V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady
State
t < 10s
Steady
State
t <1 0s
= +25°C
T
A
T
= +70°C
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
T
TA = +70°C
Steady state
T
TA = +70°C
Steady state
DMN2013UFDE
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
= +25°C
A
t<10s 132
= +25°C
A
t<10s 43
P
R
P
R
R
T
J, TSTG
D
JA
D
JA
JC
20 V
±8 V
10.5
8.5
12.5
10.0
9.4
7.5
11.2
8.8
A
A
A
A
80 A
2.5 A
0.66
0.42
189
2.03
1.31
W
°C/W
W
61
°C/W
9.3
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
20 — — V
— — 1 µA
— — ±2 µA
VGS = 0V, ID = 250A
VDS = 16V, VGS = 0V
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.5 — 1.1 V
8.4 11
—
9.8 13
12 30
15 50
— 10 — S
|
— — 1.2 V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 8.5A
GS
V
= 2.5V, ID = 8.5A
m
GS
V
= 1.8V, ID = 1A
GS
V
= 1.5V, ID = 0.5A
GS
VDS = 5V, ID = 4A
VGS = 0V, IS = 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 8V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
9. Guaranteed by design. Not subject to production testing
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. Short duration pulse test used to minimize self-heating effect
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
Q
Q
t
D(on
t
t
D(off
t
f
www.diodes.com
— 2453 —
— 275 —
— 257 —
— 1.2 —
— 14.3 —
— 25.8 —
— 1.8 —
s
— 2.1 —
d
— 9.9 —
— 24.5 —
— 66.4 —
— 20.8 —
2 of 6
pF
pF
pF
= 10V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
V
= 10V, ID = 8.5A
DS
nC
nC
ns
ns
ns
= 10V, I
V
DS
V
GS
D
= 4.5V, RG = 1.8
= 8.5A
ns
April 2013
© Diodes Incorporated
Page 3
R
CUR
RENT
R
CUR
RENT
R
R
OUR
ON-R
R
R
OUR
ON-R
R
R
OUR
C
R
R
OUR
CE ON-R
TANC
30
20
V = 5.0VDS
DMN2013UFDE
25
15
(A)
10
AIN
D
5
I, D
0
0.020
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V , GATE-SOURCE VOLTAGE
GS
Fig.2 Typical Transfer Characteristics
V = 4.5VGS
(A)
20
15
AIN
10
D
I, D
5
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig.1 Typical Output Characteristic
0.020
ESISTANCE ( )
CE
AIN-S
, D
DS(ON)
E
AIN-S
, D
DS(ON)
0.015
V = 1.5VGS
0.010
V = 1.8VGS
V = 2.5VGS
V = 4.5VGS
0.005
0
04 8121620
I , DRAIN-SOURCE CURRENTD
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
V= V
2. 5
GS
I= 5A
1.4
1.2
D
V = 4.5V
GS
I= 10A
D
1.0
ON-RESISTANCE (NORMALIZED)
0.8
0.015
ESISTANCE ( )
CE
AIN-S
0.010
0.005
T = 125°C
A
, D
DS(ON)
0
0 5 10 15 20
I , DRAIN CURRENT
D
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
0.020
E ( )
0.015
ESIS
V=.5V
GS
I= 5A
D
0.010
AIN-S
0.005
, D
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
2
V= V
4.5
GS
I = 10A
D
0.6
50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 5 On-Resistance Variation with Temperature
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
3 of 6
www.diodes.com
DS(ON)
0
-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 6 On-Resistance Variation with Temperature
© Diodes Incorporated
April 2013
Page 4
OUR
CE CUR
R
N
T
C
UNC
TIO
N CAPACITAN
C
GATE THRESH
O
OLTAG
R
C
URR
T
1.4
20
DMN2013UFDE
1.2
15
1.0
(V)
E
0.8
T= 25°C
I= 1mA
D
10
A
0.6
I = 250µA
0.4
0.2
GS(th)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
D
5
S
I, S
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
10
V = 10V, I = A
E (V)
E (pF)
C
iss
8
6
LD V
8.5
DS D
1,000
4
C
, J
T
f = 1MHz
100
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
100
R
DS(on)
Limited
oss
2
C
rss
GS
V
0
0 5 10 15 20 25 30 35 40
, TOTAL GATE CHARGE
Q (nC)
g
Fig. 10 Gate Charge
P = 100µs
W
10
(A)
EN
1
AIN
D
I, D
0.1
T = 150°C
J(max)
T = 25°C
A
V = 8V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0.01 0.1 1 10 100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 11 SOA, Safe Operation Area
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
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April 2013
© Diodes Incorporated
Page 5
T
R
T T
HER
R
TANC
DMN2013UFDE
1
D = 0.9
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Sin gle Pu lse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
R = r * R
JA(t) (t)
R = 65C/W
JA
Duty Cycle, D = t1/t2
JA
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
Package Outline Dimensions
A
D
E
E2
D2
b1
L1
Z(4X)
e
A1
K1
K2
b(6X)
A3
L(2X)
U-DFN2020-6
Type E
Dim Min Max Typ
A 0.57 0.63 0.60
A1 0 0.05 0.03
A3 — — 0.15
b 0.25 0.35 0.30
b1 0.185 0.285 0.235
D 1.95 2.05 2.00
D2 0.85 1.05 0.95
E 1.95 2.05 2.00
E2 1.40 1.60 1.50
e — — 0.65
L 0.25 0.35 0.30
L1 0.82 0.92 0.87
K1 — — 0.305
K2 — — 0.225
Z — — 0.20
All Dimensions in mm
Suggested Pad Layout
Y3
Y2
X2
Y1
X1
Dimensions
C 0.650
X 0.400
X1 0.285
X2 1.050
Y 0.500
Y1 0.920
Y2 1.600
Y3 2.300
X (6x)
C
Y (2x)
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
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www.diodes.com
Value
(in mm)
April 2013
© Diodes Incorporated
Page 6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
DMN2013UFDE
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
6 of 6
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© Diodes Incorporated
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