Diodes DMN2013UFDE User Manual
Product Summary
I
V
R
(BR)DSS
20V
DS(ON) MAX
11m @ V
13m @ VGS = 2.5V
30m @ VGS = 1.8V
50m @ VGS = 1.5V
Package
= 4.5V
GS
U-DFN2020-6 10.5A
U-DFN2020-6 9.4A
U-DFN2020-6 6.5A
U-DFN2020-6 5.5A
D
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
General Purpose Interfacing Switch
Power Management Functions
ESD PROTECTED
U-DFN2020-6
Bottom View
DMN2013UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm
Low Gate Threshold Voltage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
2
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
Pin Out
e4
Gate
Gate
Protection
Diode
Equivalent Circuit
Drain
Source
Ordering Information (Note 5)
Part Number Compliance Case Quantity per reel
DMN2013UFDE-7 Standard U-DFN2020-6 3,000
DMN2013UFDEQ-7 Automotive U-DFN2020-6 3,000
DMN2013UFDE-13 Standard U-DFN2020-6 10,000
DMN2013UFDEQ-13 Automotive U-DFN2020-6 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
N6
www.diodes.com
N6 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
1 of 6
April 2013
© Diodes Incorporated
)
g
g
g
)
r
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 4.5V
Continuous Drain Current (Note 7) VGS = 2.5V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady
State
t < 10s
Steady
State
t <1 0s
= +25°C
T
A
T
= +70°C
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
T
TA = +70°C
Steady state
T
TA = +70°C
Steady state
DMN2013UFDE
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
= +25°C
A
t<10s 132
= +25°C
A
t<10s 43
P
R
P
R
R
T
J, TSTG
D
JA
D
JA
JC
20 V
±8 V
10.5
8.5
12.5
10.0
9.4
7.5
11.2
8.8
A
A
A
A
80 A
2.5 A
0.66
0.42
189
2.03
1.31
W
°C/W
W
61
°C/W
9.3
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
20 — — V
— — 1 µA
— — ±2 µA
VGS = 0V, ID = 250A
VDS = 16V, VGS = 0V
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.5 — 1.1 V
8.4 11
—
9.8 13
12 30
15 50
— 10 — S
|
— — 1.2 V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 8.5A
GS
V
= 2.5V, ID = 8.5A
m
GS
V
= 1.8V, ID = 1A
GS
V
= 1.5V, ID = 0.5A
GS
VDS = 5V, ID = 4A
VGS = 0V, IS = 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 8V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
9. Guaranteed by design. Not subject to production testing
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. Short duration pulse test used to minimize self-heating effect
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
Q
Q
t
D(on
t
t
D(off
t
f
www.diodes.com
— 2453 —
— 275 —
— 257 —
— 1.2 —
— 14.3 —
— 25.8 —
— 1.8 —
s
— 2.1 —
d
— 9.9 —
— 24.5 —
— 66.4 —
— 20.8 —
2 of 6
pF
pF
pF
= 10V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
V
= 10V, ID = 8.5A
DS
nC
nC
ns
ns
ns
= 10V, I
V
DS
V
GS
D
= 4.5V, RG = 1.8
= 8.5A
ns
April 2013
© Diodes Incorporated
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