Diodes DMN2011UFDE User Manual

Y

DMN2011UFDE

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

D max

TA = +25°C

11.7A

10.8A

V

(BR)DSS

20V

R

DS(ON) max

9.5mΩ @ V

11mΩ @ VGS = 2.5V

GS

= 4.5V

Package

U-DFN2020-6

Type E

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

ADVANCE INFORMATION

 General Purpose Interfacing Switch

 Power Management Functions

Pin1

ESD PROTECTED

U-DFN2020-6 Type E

Bottom View

Features

 0.6mm profile – ideal for low profile applications

2

 PCB footprint of 4mm

 Low Gate Threshold Voltage

 Low On-Resistance

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-DFN2020-6 Type E

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.0065 grams (approximate)

e4

D

G

Bottom View

Pin Out

Gate Protection

Diode

Equivalent Circuit

S

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Quantity per reel

DMN2011UFDE-7 N3 7 3,000

DMN2011UFDE-13 N3 13 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2011UFDE

D

atasheet number: DS36376 Rev. 3 - 2

N3

www.diodes.com

N3 = Product Type Marking Code

M

YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

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March 2014

DMN2011UFDE

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

= +70°C

T

A

Continuous Drain Current (Note 6) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 2.5V

Steady

State

t<10s

Steady

State

t<10s

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Body Diode Continuous Current

Avalanche Current (Notes 7) L = 0.1mH

Avalanche Energy (Notes 7) L = 0.1mH

ADVANCE INFORMATION

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

I

AS

E

AS

20 V

±12 V

11.7

9.3

14.2

11.4

10.8

8.7

13.2

10.6

A

80 A

2.5 A

18 A

17 mJ

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

DMN2011UFDE

D

atasheet number: DS36376 Rev. 3 - 2

= +25°C

T

A

TA = +70°C

Steady state

t<10s 142

= +25°C

T

A

TA = +70°C

Steady state

t<10s 43

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P

R

P

R

T

J, TSTG

θJA

θJC

D

0.61

0.39

209

1.97

1.27

64

9.8

-55 to +150 °C

W

°C/W

W

°C/W

March 2014

R

C

URR

T

RAIN C

URR

N

T

DMN2011UFDE

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

BV

DSS

I

GSS

DSS

20 — — V

— — 1 µA

— — ±10 µA

VGS = 0V, ID = 250μA

VDS = 16V, VGS = 0V

VGS = ±10V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V

R

DS(ON)

|Y

V

GS(th)

fs

SD

0.4 — 1.0 V

6.5 9.5

—

7.5 11

10 20

15 35

— 12 — S

|

— 0.7 1.2 V

VDS = VGS, ID = 250μA

= 4.5V, ID = 7A

V

GS

V

= 2.5V, ID = 7A

mΩ

GS

V

= 1.8V, ID = 5A

GS

V

= 1.5V, ID = 3A

GS

VDS = 10V, ID = 8.5A

VGS = 0V, IS = 8.5A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

ADVANCE INFORMATION

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

g

Total Gate Charge (VGS = 4.5V) Qg

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C

7. I

AS

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Q

t

D(on)

t

D(off)

T

Q

gs

gd

t

r

t

f

rr

— 2248 — pF

— 295 — pF

— 265 — pF

— 1.5 — Ω

— 24 — nC

— 56 — nC

— 3.5 — nC

— 5.1 — nC

— 3.6 — ns

— 2.6 — ns

— 21.6 — ns

— 13.5 — ns

— 12.8 — ns

— 6.9 — nC

VDS = 10V, VGS = 0V, f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

= 10V, ID = 8.5A

V

DS

= 10V, ID = 8.5A

V

DS

= 4.5V, RG = 1.8Ω

V

GS

= 8.5A, di/dt = 210A/μs

I

F

(A)

EN

30.0

25.0

20.0

V= 10V

GS

V= 4.5V

GS

V= 4.0V

GS

V= 3.5V

GS

V= 3.0V

GS

V= 2.5V

GS

V= 2.0V

GS

V= 1.5V

GS

15.0

AIN

10.0

D

I, D

5.0

0.0

V= 1.0V

GS

V= 1.2V

GS

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Character istic

30

V= 5.0V

DS

25

(A)

20

E

15

T = 150°C

A

T = 125°C

A

T = 85°C

A

10

D

I, D

T = 25°C

A

5

T = -55°C

A

0

0 0.5 1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

DMN2011UFDE

D

atasheet number: DS36376 Rev. 3 - 2

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March 2014

O

R

RAIN-SOUR

CE O

N-R

TAN

C

R

OUR

ON-R

R

OUR

C

R

OUR

C

ON-R

T

C

DMN2011UFDE



0.03



E ( )

0.025

ESIS

0.02

N-RESISTANCE ( )

V = 1.5VGS

I = 8.5AD

I = 3.0AD

0.015

URCE

V= 1.8V

GS

V= 2.5V

GS

DS(ON)

R , DRAIN-S

V = 4.5VGS

I , DRAIN-SOURCE CURRENT (A)D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

ADVANCE INFORMATION



0.016

V= 4.5V

GS

0.01

, D

0.005

DS(ON)

0

024681012

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Transfer Characteristics

2

0.014

0.012

ESISTANCE ( )

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

CE

AIN-S

0.01

0.008

0.006

0.004

, D

0.002

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

0.02



0.018

E ( )

0.016

AN

0.014

ESIS

V= V

GS

I= 3A

D

0.012

0.01

E

0.008

V=.5V

1.8

2

GS

I= 5A

D

1.6

E

1.2

AIN-S

V= V

GS

I= 5A

D

, D

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.4

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

1

0.8

I= 1mA

D

0.6

I = 250µA

D

0.4

2.5

V= V

GS

I= 3A

D



1.8

0.006

AIN-S

0.004

, D

0.002

DS(ON)

0

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Figure 7 On-Resistance Variation with Temperature



0.2

GS(th)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J



Figure 8 Gate Threshold Variation vs. Ambient Temperature

DMN2011UFDE

D

atasheet number: DS36376 Rev. 3 - 2

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March 2014

OUR

CE CUR

RENT

C

UNC

TIO

N CAP

C

T

N

C

GATE THRESH

OLD VOLTAG

RAIN CUR

REN

T

R

T T

H

R

TANC

DMN2011UFDE

30

10000

f = 1MHz

25

(A)

20

15

10

S

I, S

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°CA

T = -55°C

A

5

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

10

ADVANCE INFORMATION

9

8

E (V)

E (pF)

A I

C

iss

A

1000

C

oss

, J

T

100

0 2 4 6 8 101214161820

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

rss

Figure 10 Typical Junction Capacitance

1000

R

DS(on)

Limited

100

7

6

V = 10V

5

DS

I= A

8.5

D

4

3

2

GS

V

1

0

0102030405060

Q(nC)

, TOTAL GATE CHARGE

g

Figure 11 Gate Charge

1

D = 0.9

0.1

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

E

ESIS

MAL

(A)

10

DC

P = 10s

1

D

T = 150°C

-I , D

J(max)

0.1

T = 25°C

A

V = 4.5V

GS

Single Pulse

DUT on 1 * MRP Board

0.01

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.01 0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

E

D = 0.02

0.01

D = 0.01

ANSIEN

r(t),

0.001

D = 0.005

D = Single Pulse

R (t) = r(t) * R



JA JA

R = 207°C/W



JA

Duty Cycle, D = t1/ t2

0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

DMN2011UFDE

D

atasheet number: DS36376 Rev. 3 - 2

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DMN2011UFDE

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCE INFORMATION

E

Z(4X)

A

E2

D

b1

D2

L1

e

A1

K1

K2

b(6X)

A3

L(2X)

U-DFN2020-6

Type E

Dim Min Max Typ

A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.15

b 0.25 0.35 0.30 b1 0.185 0.285 0.235

D 1.95 2.05 2.00 D2 0.85 1.05 0.95

E 1.95 2.05 2.00 E2 1.40 1.60 1.50

e — — 0.65

L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 — — 0.305 K2 — — 0.225

Z — — 0.20

All Dimensions in mm

Suggested Pad Layout

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Y3

X (6x)

Y2

DMN2011UFDE

D

atasheet number: DS36376 Rev. 3 - 2

Dimensions

C 0.650 X 0.400

X1 0.285

X2

C

Y1

X1

Y (2x)

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X2 1.050

Y 0.500 Y1 0.920 Y2 1.600 Y3 2.300

Value

(in mm)

March 2014

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

IMPORTANT NOTICE

LIFE SUPPORT

DMN2011UFDE

D

atasheet number: DS36376 Rev. 3 - 2

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March 2014