Diodes DMN2011UFDE User Manual
Y
DMN2011UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
I
D max
TA = +25°C
11.7A
10.8A
V
(BR)DSS
20V
R
DS(ON) max
9.5mΩ @ V
11mΩ @ VGS = 2.5V
GS
= 4.5V
Package
U-DFN2020-6
Type E
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
ADVANCE INFORMATION
General Purpose Interfacing Switch
Power Management Functions
Pin1
ESD PROTECTED
U-DFN2020-6 Type E
Bottom View
Features
0.6mm profile – ideal for low profile applications
2
PCB footprint of 4mm
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
e4
D
G
Bottom View
Pin Out
Gate Protection
Diode
Equivalent Circuit
S
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Quantity per reel
DMN2011UFDE-7 N3 7 3,000
DMN2011UFDE-13 N3 13 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN2011UFDE
D
atasheet number: DS36376 Rev. 3 - 2
N3
www.diodes.com
N3 = Product Type Marking Code
M
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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March 2014
© Diodes Incorporated
DMN2011UFDE
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
= +25°C
T
A
= +70°C
T
A
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
T
= +25°C
A
= +70°C
T
A
Continuous Drain Current (Note 6) VGS = 4.5V
Continuous Drain Current (Note 6) VGS = 2.5V
Steady
State
t<10s
Steady
State
t<10s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Avalanche Current (Notes 7) L = 0.1mH
Avalanche Energy (Notes 7) L = 0.1mH
ADVANCE INFORMATION
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
I
AS
E
AS
20 V
±12 V
11.7
9.3
14.2
11.4
10.8
8.7
13.2
10.6
A
A
A
A
80 A
2.5 A
18 A
17 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
DMN2011UFDE
D
atasheet number: DS36376 Rev. 3 - 2
= +25°C
T
A
TA = +70°C
Steady state
t<10s 142
= +25°C
T
A
TA = +70°C
Steady state
t<10s 43
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www.diodes.com
P
R
P
R
R
T
J, TSTG
θJA
θJA
θJC
D
D
0.61
0.39
209
1.97
1.27
64
9.8
-55 to +150 °C
W
°C/W
W
°C/W
March 2014
© Diodes Incorporated
R
C
URR
T
RAIN C
URR
N
T
DMN2011UFDE
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
20 — — V
— — 1 µA
— — ±10 µA
VGS = 0V, ID = 250μA
VDS = 16V, VGS = 0V
VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
R
DS(ON)
|Y
V
GS(th)
fs
SD
0.4 — 1.0 V
6.5 9.5
—
7.5 11
10 20
15 35
— 12 — S
|
— 0.7 1.2 V
VDS = VGS, ID = 250μA
= 4.5V, ID = 7A
V
GS
V
= 2.5V, ID = 7A
mΩ
GS
V
= 1.8V, ID = 5A
GS
V
= 1.5V, ID = 3A
GS
VDS = 10V, ID = 8.5A
VGS = 0V, IS = 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
ADVANCE INFORMATION
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
g
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
7. I
AS
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Q
Q
t
D(on)
t
D(off)
T
Q
gs
gd
t
r
t
f
rr
rr
— 2248 — pF
— 295 — pF
— 265 — pF
— 1.5 — Ω
— 24 — nC
— 56 — nC
— 3.5 — nC
— 5.1 — nC
— 3.6 — ns
— 2.6 — ns
— 21.6 — ns
— 13.5 — ns
— 12.8 — ns
— 6.9 — nC
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
= 10V, ID = 8.5A
V
DS
= 10V, ID = 8.5A
V
DS
= 4.5V, RG = 1.8Ω
V
GS
= 8.5A, di/dt = 210A/μs
I
F
(A)
EN
30.0
25.0
20.0
V= 10V
GS
V= 4.5V
GS
V= 4.0V
GS
V= 3.5V
GS
V= 3.0V
GS
V= 2.5V
GS
V= 2.0V
GS
V= 1.5V
GS
15.0
AIN
10.0
D
I, D
5.0
0.0
V= 1.0V
GS
V= 1.2V
GS
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Character istic
30
V= 5.0V
DS
25
(A)
20
E
15
T = 150°C
A
T = 125°C
A
T = 85°C
A
10
D
I, D
T = 25°C
A
5
T = -55°C
A
0
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
DMN2011UFDE
D
atasheet number: DS36376 Rev. 3 - 2
3 of 7
www.diodes.com
March 2014
© Diodes Incorporated
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