Diodes DMN2009LSS User Manual

θ

Features

• Low On-Resistance

• 8mΩ @ V

• 9mΩ @ V

• 12mΩ @ V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

= 10V

GS

= 4.5V

GS

GS

= 2.5V

SO-8

TOP VIEW

DMN2009LSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.072 grams (approximate)

S

S
S
G

TOP VIEW

Internal Schematic

D

D
D
D

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady

State
Pulsed Drain Current (Note 3)

T

= 25°C

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

DM

20 V

±12

12

9.6

V
A

42 A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 1. Device mounted on 2 oz, FR-4 PCB, with R

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

= 62.5°C/W

JA

θ

P

R

T

J, TSTG

D
JA

DMN2009LSS

Document number: DS31409 Rev. 6- 2

1 of 5

www.diodes.com

2 W

62.5 °C/W

-55 to +150 °C

June 2010

© Diodes Incorporated

)

g

g

R

N C

U

R

R

N

T

RAIN

C

U

R

REN

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

DSS

I

⎯ ⎯

DSS

I

⎯ ⎯

GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage (Note 5)

V

GS(th

R

DS (ON)

V

g

fs

SD

⎯

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

SWITCHING CHARACTERISTICS

Total Gate Charge
Gate-Source Charge

Gate-Drain Charge

Notes: 5. Short duration pulse test used to minimize self-heating effect.

Q

g

Q

⎯

s

Q

⎯

d

30

V = 10V

GS

25

(A)

20

E

V = 4.5V

GS

V = 4.0V

GS

V = 3.0V

GS

V = 2.5V

GS

V = 5V

DS

15

20

⎯ ⎯

1

±100

0.5

⎯

⎯
⎯

⎯
⎯

27

1.2 V
8

9

12
⎯

0.5 0.7 1.2 V

⎯
⎯
⎯

⎯

⎯

2555

523
496

1.1

28.9

58.3

3.7

11.4

⎯
⎯
⎯
⎯ Ω

⎯

⎯ VDS = 10V, VGS = 10V, ID = 12A
⎯ VDS = 10V, VGS = 10V, ID = 12A

V

V

GS

μA

V

nA

mΩ

DS

V

GS

V

DS

V

GS

V

GS

V

GS

S

V

DS

VGS = 0V, IS = 3A

pF
pF

V

DS

pF

VGS = 0V VDS = 0V, f = 1MHz

V

DS

V

nC

DS

30

25

V = 10V

(A)

20

15

DS

DMN2009LSS

= 0V, ID = 250μA
= 20V, VGS = 0V

= ±12V, VDS = 0V

= VGS, ID = 250μA
= 10V, ID = 12A
= 4.5V, ID = 10A
= 2.5V, ID = 8A

= 5V, ID = 6.5A

= 10V, VGS = 0V, f = 1.0MHz

= 10V, VGS = 4.5V, ID = 12A
= 10V, VGS = 10V, ID = 12A

AI

D

I, D

10

V = 1.5V

GS

5

0

012345

V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 1 Typical Output Characteristics

DMN2009LSS

Document number: DS31409 Rev. 6- 2

2 of 5

www.diodes.com

10

D

I, D

5

0

0.4 0.6 0.8 1 1.2 1.4 1.6
V , GATE SOURCE VOLTAGE (V)

GS

T = 150°C

T = 125°C

A

T = 85°C

A

A

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

June 2010

© Diodes Incorporated