Diodes DMN2005UFG User Manual
Product Summary
V
R
(BR)DSS
20V
4.6mΩ @ V
8.7mΩ @ VGS = 2.5V
DS(ON)
max
= 4.5V
GS
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Applications
• Backlighting
• Power Management Functions
ADVANCE INFORMATION
• DC-DC Converters
ADVANCED INFORMATION
D
D
D
D
Bottom View
Pin 1
S
S
S
G
Ordering Information (Note 4)
Part Number Case Packaging
DMN2005UFG-7
DMN2005UFG-13
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
I
max
D
TA = 25°C (t<10s)
24.1A
17.5A
POWERDI3333-8
YYWW
N05
POWERDI3333-8
POWERDI3333-8
DMN2005UFG
20V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Features and Benefits
• Low R
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• 100% UIS & Rg tested
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
– ensures on state losses are minimized
DS(ON)
Mechanical Data
• Case: POWERDI®3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
D
G
S
Top View
N05= Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
Equivalent Circuit
2,000/Tape & Reel
3,000/Tape & Reel
®
POWERDI is a registered trademark of Diodes Incorporated.
DMN2005UFG
Document number: DS36943 Rev. 2 - 2
1 of 7
www.diodes.com
May 2014
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current , L = 0.2mH
Repetitive Avalanche Energy, L = 0.2mH
Thermal Characteristics (@T
ADVANCE INFORMATION
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
ADVANCED INFORMATION
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
Characteristic Symbol Value Units
= +25°C
Steady
State
t<10s
= +25°C, unless otherwise specified.)
A
T
C
= +70°C
T
C
T
= +25°C
A
= +70°C
T
A
T
= +25°C PD
A
Steady state
t<10s 67
T
= +25°C PD
A
Steady state
t<10s 31
DMN2005UFG
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
AS
E
AS
R
JA
θ
R
JA
θ
R
JC
θ
T
J, TSTG
20 V
±12 V
18.1
14.5
24.1
19.3
A
A
58.3 A
2.6 A
23.9 A
58.4 mJ
1.05 W
120
°C/W
2.27 W
55
°C/W
6.1
-55 to +150 °C
POWERDI is a registered trademark of Diodes Incorporated.
DMN2005UFG
Document number: DS36943 Rev. 2 - 2
2 of 7
www.diodes.com
May 2014
© Diodes Incorporated
R
C
U
R
R
T
RAIN CUR
R
N
T
Electrical Characteristics (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
ADVANCE INFORMATION
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
ADVANCED INFORMATION
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
(A)
30
25
20
V = 10VGS
V= 4.5V
GS
V= 3.0V
GS
V= 2.5V
GS
V= 2.0V
GS
EN
= +25°C, unless otherwise specified.)
A
BV
I
V
R
DS(ON)
V
C
C
DSS
DSS
GSS
GS(th)
SD
C
iss
oss
rss
R
g
20 — — V
— — 10 µA
— — ±100 nA
0.4 0.7 1.2 V
— 4 4.6
3.9 8.7
— 0.8 1.1 V
—
—
—
— 0.7 —
— 68.8 —
— 164 —
— 10.4 —
— 17.4 —
—
—
—
—
— 16.1 — ns
— 8.5 — nC
V= 1.5V
GS
Q
Q
t
D(on)
t
D(off)
Q
gs
gd
t
r
t
f
t
rr
rr
(A)
E
6495
546
477
12.4
25.7
114
38
30
25
20
—
—
—
— ns
— ns
— ns
— ns
V = 5.0VDS
DMN2005UFG
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
= 4.5V, ID = 13.5A
V
mΩ
pF
pF
pF
nC
nC
nC
nC
GS
V
= 2.5V, ID = 13.5A
GS
VGS = 0V, IS = 27A
V
= 10V, VGS = 0V,
DS
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
= 16V, ID = 27A
V
DS
= 5V, VDS = 10V,
V
GS
= 4.7Ω, ID = 13.5A
R
G
IF = 13.5A, di/dt = 100A/μs
IF = 13.5A, di/dt = 100A/μs
15
15
AIN
10
D
I, D
V= 1.3V
GS
5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
10
D
I, D
5
0
0 0.5 1 1.5 2 2.5
T = 150°C
A
T = 125°C
A
V , GATE-SOURCE VOLTAGE (V)
GS
T = 85°C
A
T = 25°C
A
T = -55°C
A
Figure 2 Typical Transf er Characteristics
POWERDI is a registered trademark of Diodes Incorporated.
DMN2005UFG
Document number: DS36943 Rev. 2 - 2
3 of 7
www.diodes.com
May 2014
© Diodes Incorporated
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