Diodes DMN2005LPK User Manual

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• ESD Protected Gate

• Qualified to AEC-Q101 Standards for High Reliability

ESD PROTECTED

X1-DFN1006-3

Bottom View

DMN2005LPK

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Gate

S

D

G

Internal Schematic

Gate

Protection

Diode

e4

Drain

Body Diode

Source

Equivalent CircuitTop View

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2005LPK-7 DM 7 8 3,000

DMN2005LPK-7B DM 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2005LPK

Document number: DS30836 Rev. 9 - 2

DMN2005LPK-7 DMN2005LPK-7B

DM DM

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

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DM = Product Type Marking Code

June 2012

θ

j

)

DMN2005LPK

Maximum Ratings (@T

= 25°C unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage Gate-Source Voltage Drain Current per element (Note 5)

V

DSS

V

GSS

I

D

20 V

±10

V

440 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range

P

D

R

JA

, T

T

STG

Electrical Characteristics (@T

= 25°C unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I I

DSS DSS GSS

20

⎯ ⎯

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Notes: 5. Device mounted on FR-4 PCB.

6. Short duration pulse test used to minimize self-heating effect.

DMN2005LPK

Document number: DS30836 Rev. 9 - 2

V

GS(th

R

DS (ON)

|Y

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0.53

⎯ ⎯ ⎯

⎯ ⎯

40

|

fs

⎯

0.35

0.4

0.45

0.55

0.65 ⎯ ⎯

450 mW 218

-65 to +150

V 10 µA ±5

µA

1.2 V

1.5

1.7

Ω

3.5

3.5 mS

VGS = 0V, ID = 100μA V V

V V V V V V VDS = 3V, ID = 10mA

°C/W

°C

= 17V, VGS = 0V

DS

= ±8V, VDS = 0V

GS

= VGS, ID = 100μA

DS

= 4V, ID = 10mA

GS

= 2.7V, ID = 200mA

GS

= 2.5V, ID = 10mA

GS

= 1.8V, ID = 200mA

GS

= 1.5V, ID = 1mA

GS

June 2012

RAIN CUR

R

N

T

R

CUR

RENT

R

RAIN-SOUR

CE O

N-R

TAN

C

R

OUR

C

R

RAIN

OUR

CE O

N

R

T

N

C

DMN2005LPK

2.0

1.5

V = 4.5V

GS

V = 2.5V

GS

V = 2.0V

GS

(A) E

1.0

V = 1.8V

GS

1.5

V = 5V

DS

(A)

1.0

AIN

0.5

D

I, D

0.5

0

012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = 1.5V

GS

V = 1.2V

GS

Fig. 1 Typical Output Characteristics

2.0

Ω

D

I, D

0

0 0.5 1 1.5 2 2.5 3

0.8

Ω

E ( )

T = 150°C

A

T = 125°C

A

T = 85°C

A

V , GATE SOURCE VOLT AGE (V)

GS

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

V = 4.5V

GS

1.6

0.6

V= 1.5V

1.2

GS

0.8

V = 1.8V

GS

0.4

V = 4.5V

V= 5.0V

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 0.4 0.8 1.2 1.6 2

GS

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

GS

vs. Drain Current and G at e Vol t age

1.6

V = 4.5V

GS

I = 1.0A

1.4

D

E

1.2

AIN-S , D

1.0

DS(ON)

0.8

ON-RE SISTAN CE (N ORMAL IZED)

V = 2.5V

GS

V = 2.5.V

GS

I = 500mA

D

ESIS

0.4

0.2

, D

DS(ON)

0

0 0.4 0.8 1.2 1.6

I , DRAIN CURRENT (A)

D

Fig. 4 Typical Drain-Source On-R esi st ance

0.8

Ω

vs. Drain Current and Tem pe ra t ur e

E ( ) A

0.6

ESIS

-

V = 2.5V

0.4

GS

I = 500mA

D

-S

0.2

V = 4.5V

GS

I = 1.0A

, D

D

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On-Resistance Variation with T emperature

DS(ON)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On-Resistance Variation with Temperature

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OUR

CE CUR

RENT

C, CAPACITANC

F

R

OUR

C

GE CUR

RENT

1.2

1.6

DMN2005LPK

1.0

T = 25°C

A

0.8

0.6

I = 250µA

D

I = 1mA

D

1.2

(A)

0.8

0.4

S

0.4

I, S

0.2

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

60

50

f = 1MHz

)

40

E (p

C

iss

30

0

0.2

0 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Dio de Forwar d Voltag e vs. Curre nt

1,000

(nA)

100

T = 150°C

A

T = 125°C

A

10

E LEAKA

T = 85°C

A

20

T = -55°C

A

T = 25°C

A

10

0

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Capacitance

C

oss

C

rss

5

1

AIN-S

0.1

DSS

I, D

2 4 6 8 10 12 14 16 18 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-S ource Volta ge

4

V = 10V

DS

I = 250mA

D

3

2

1

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 0.1 0.2 0.3 0.4 0.5 0.6

Q , TOT AL GATE CHARGE (nC)

g

Fig. 11 Gate-Charge Characteristics

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Document number: DS30836 Rev. 9 - 2

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T

R

T T

HER

R

TANC

DMN2005LPK

1

E

D = 0.7

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

t , PULSE DURATION TIME (s)

1

R (t) = r(t) *

θ

JA

R = 221°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

Fig. 12 Transient Thermal Response

Package Outline Dimensions

A

A1

D

b1

b2

E

L2

L1L3

e

X1-DFN1006-3

Dim Min Max Typ

A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50

D 0.95 1.075 1.00

E 0.55 0.675 0.60 e

⎯ ⎯

0.35

L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3

⎯ ⎯

0.40

All Dimensions in mm

Suggested Pad Layout

DMN2005LPK

Document number: DS30836 Rev. 9 - 2

X

1

G2

X

C

Dimensions Value (in mm)

Z 1.1 G1 0.3 G2 0.2

X 0.7 X1 0.25

Y 0.4

G1

Y

Z

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C 0.7

June 2012

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMN2005LPK

Document number: DS30836 Rev. 9 - 2

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