Diodes DMN2005LPK User Manual
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• ESD Protected Gate
• Qualified to AEC-Q101 Standards for High Reliability
ESD PROTECTED
X1-DFN1006-3
Bottom View
DMN2005LPK
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: X1-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Gate
S
D
G
Internal Schematic
Gate
Protection
Diode
e4
Drain
Body
Diode
Source
Equivalent CircuitTop View
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN2005LPK-7 DM 7 8 3,000
DMN2005LPK-7B DM 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2005LPK
Document number: DS30836 Rev. 9 - 2
DMN2005LPK-7 DMN2005LPK-7B
DM DM
Top View
Dot Denotes
Drain Side
Top View
Bar Denotes Gate
and Source Side
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DM = Product Type Marking Code
June 2012
© Diodes Incorporated
θ
j
)
DMN2005LPK
Maximum Ratings (@T
= 25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 5)
V
DSS
V
GSS
I
D
20 V
±10
V
440 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
P
D
R
JA
, T
T
STG
Electrical Characteristics (@T
= 25°C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
I
DSS
DSS
GSS
20
⎯ ⎯
⎯ ⎯
⎯ ⎯
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
DMN2005LPK
Document number: DS30836 Rev. 9 - 2
V
GS(th
R
DS (ON)
|Y
2 of 6
www.diodes.com
0.53
⎯
⎯
⎯
⎯
⎯
40
|
fs
⎯
0.35
0.4
0.45
0.55
0.65
⎯ ⎯
450 mW
218
-65 to +150
V
10 µA
±5
µA
1.2 V
1.5
1.7
1.7
Ω
3.5
3.5
mS
VGS = 0V, ID = 100μA
V
V
V
V
V
V
V
V
VDS = 3V, ID = 10mA
°C/W
°C
= 17V, VGS = 0V
DS
= ±8V, VDS = 0V
GS
= VGS, ID = 100μA
DS
= 4V, ID = 10mA
GS
= 2.7V, ID = 200mA
GS
= 2.5V, ID = 10mA
GS
= 1.8V, ID = 200mA
GS
= 1.5V, ID = 1mA
GS
June 2012
© Diodes Incorporated
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