Page 1
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage, 0.9V Max.
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• ESD Protected Gate
• Ultra Low Profile Package
• Qualified to AEC-Q101 Standards for High Reliability
ESD PROTECTED
X2-DFN1006-3
Bottom View
DMN2005LP4K
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams
Drain
Gate
Gate
Protection
Diode
Equivalent Circuit
Source
Body
Diode
e4
S
D
G
Top View
Pin-Out
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN2005LP4K-7 DN 7 8 3000
DMN2005LP4K-7B DN 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2005LP4K
Document number: DS30799 Rev. 6 - 2
DMN2005LP4K-7 DMN2005LP4K-7B
DN DN
Top View
Dot Denotes
Drain Side
Top View
Bar Denotes Gate
and Source Side
1 of 6
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DN = Product Type Marking Code
June 2012
© Diodes Incorporated
Page 2
θ
)
DMN2005LP4K
Maximum Ratings (@T
= 25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 5) Continuous
Pulsed (Note 6)
V
DSS
V
GSS
I
D
20 V
±10
300
350
V
mA
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
P
D
R
JA
, T
T
J
STG
Electrical Characteristics (@T
= 25°C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (per element) (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
20
⎯ ⎯
⎯ ⎯
⎯ ⎯
10 µA
±5
ON CHARACTERISTICS (per element) (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
V
GS(th
R
DS (ON)
⏐Y
fs
0.53
⎯
⎯
⎯
⎯
⎯
40
⏐
⎯
0.35
0.4
0.45
0.55
0.65
⎯ ⎯
0.9 V
1.5
1.7
1.7
3.5
3.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width ≤10μS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
Turn-on Time
Turn-off Time
⎯
C
iss
C
oss
⎯
C
rss
t
on
t
off
⎯
⎯
⎯
37.1
6.5
4.8
4.06
13.7
⎯
⎯
⎯
⎯
⎯
DMN2005LP4K
Document number: DS30799 Rev. 6 - 2
2 of 6
www.diodes.com
400 mW
280 °C/W
-65 to +150 °C
V
VGS = 0V, ID = 100µA
V
µA
Ω
mS
pF
pF
pF
nS
= 17V, V
DS
V
= ±8V, VDS = 0V
GS
V
= VGS, ID = 100µA
DS
V
= 4V, ID = 10mA
GS
V
= 2.7V, ID = 200mA
GS
= 2.5V, ID = 10mA
V
GS
V
= 1.8V, ID = 200mA
GS
= 1.5V, ID = 1mA
V
GS
V
= 3V, ID = 10mA
DS
V
= 10V, VGS = 0V
DS
f = 1.0MHz
V
= 10V, Rl = 47Ω, V
DD
= 10Ω.
R
GEN
= 0V
GS
© Diodes Incorporated
= 4.5V,
GEN
June 2012
Page 3
RAIN CUR
REN
T
R
CUR
RENT
R
RAIN-SOUR
CE O
N-R
TAN
C
R
R
OUR
C
R
RAIN-SOUR
C
O
N-R
T
N
C
DMN2005LP4K
2.0
1.5
V = 4.5V
GS
V = 2.5V
GS
V = 2.0V
GS
(A)
V = 1.8V
1.0
GS
1.5
V = 5V
DS
(A)
1.0
AIN
0.5
D
I, D
0.5
0
012345
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 1.5V
GS
V = 1.2V
GS
Fig. 1 Typical Output Characteristics
0.8
Ω
D
I, D
0
0 0.5 1 1.5 2 2.5 3
0.8
Ω
E ( )
T = 150°C
A
T = 125°C
A
T = 85°C
A
V , GATE SOURCE VOLT AGE (V)
GS
T = 25°C
A
T = -55°C
A
Fig. 2 Typical Transfer Characteristics
V = 4.5V
GS
0.6
V = 1.8V
GS
V = 2.5V
GS
0.4
V = 4.5V
GS
0.2
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
0 0.4 0.8 1.2 1.6 2
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain C urrent an d G at e Vol t age
1.6
V = 4.5V
GS
I = 1.0A
1.4
D
E
1.2
AIN-S
, D
1.0
V = 2.5.V
GS
I = 500mA
D
0.6
ESIS
0.4
0.2
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
, D
DS(ON)
0
0 0.4 0.8 1.2 1.6
I , DRAIN CURRENT (A)
D
Fig. 4 Typical Drain-Sou r ce O n-Resist ance
0.8
Ω
vs. Drain Current and Temperature
E ( )
A
0.6
ESIS
0.4
V = 2.5V
GS
I = 500mA
D
E
DS(ON)
0.8
ON-RE SISTAN CE (N ORMAL IZED)
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance Variation with T emperature
0.2
V = 4.5V
GS
I = 1.0A
, D
DS(ON)
D
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 6 On-Resistance Variation with Temperature
DMN2005LP4K
Document number: DS30799 Rev. 6 - 2
3 of 6
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June 2012
© Diodes Incorporated
Page 4
OUR
CE CUR
RENT
C, CAPACITAN
C
F
DMN2005LP4K
1.2
1.6
1.0
T = 25°C
A
0.8
0.6
I = 250µA
D
I = 1mA
D
1.2
(A)
0.8
0.4
S
0.4
I, S
0.2
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient T emperature
0
0.2
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Dio de Forwar d Voltag e vs. Curre nt
60
50
f = 1MHz
)
40
E (p
C
iss
30
20
10
0
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Capacitance
C
oss
C
rss
DMN2005LP4K
Document number: DS30799 Rev. 6 - 2
4 of 6
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June 2012
© Diodes Incorporated
Page 5
Package Outline Dimensions
A
A1
D
b2
E
L2
Suggested Pad Layout
X
1
X
G2
C
G1
Y
Z
DMN2005LP4K
X2-DFN1006-3
Dim Min Max Typ
A
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
b1
e
L1L3
e
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
All Dimensions in mm
Dimensions Value (in mm)
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
Y 0.4
C 0.7
0.40
⎯
⎯ ⎯
⎯ ⎯
⎯
0.35
0.40
DMN2005LP4K
Document number: DS30799 Rev. 6 - 2
5 of 6
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June 2012
© Diodes Incorporated
Page 6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMN2005LP4K
DMN2005LP4K
Document number: DS30799 Rev. 6 - 2
6 of 6
www.diodes.com
June 2012
© Diodes Incorporated
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