Diodes DMN2005LP4K User Manual

Features

• Low On-Resistance

• Very Low Gate Threshold Voltage, 0.9V Max.

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• ESD Protected Gate

• Ultra Low Profile Package

• Qualified to AEC-Q101 Standards for High Reliability

ESD PROTECTED

X2-DFN1006-3

Bottom View

DMN2005LP4K

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams

Drain

Gate

Gate
Protection
Diode

Equivalent Circuit

Source

Body
Diode

e4

S

D

G

Top View

Pin-Out

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2005LP4K-7 DN 7 8 3000

DMN2005LP4K-7B DN 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN2005LP4K

Document number: DS30799 Rev. 6 - 2

DMN2005LP4K-7 DMN2005LP4K-7B

DN DN

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

1 of 6

www.diodes.com

DN = Product Type Marking Code

June 2012

© Diodes Incorporated

θ

)

DMN2005LP4K

Maximum Ratings (@T

= 25°C unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 5) Continuous

Pulsed (Note 6)

V

DSS

V

GSS

I

D

20 V

±10
300

350

V

mA

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

D

R

JA

, T

T

J

STG

Electrical Characteristics (@T

= 25°C unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (per element) (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

20

⎯ ⎯

⎯ ⎯

⎯ ⎯

10 µA

±5
ON CHARACTERISTICS (per element) (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

V

GS(th

R

DS (ON)

⏐Y

fs

0.53

⎯
⎯
⎯
⎯
⎯

40

⏐

⎯

0.35

0.4

0.45

0.55

0.65
⎯ ⎯

0.9 V

1.5

1.7

1.7

3.5

3.5

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Switching Time

Notes: 5. Device mounted on FR-4 PCB.

6. Pulse width ≤10μS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

Turn-on Time
Turn-off Time

⎯

C

iss

C

oss

⎯

C

rss

t

on

t

off

⎯

⎯
⎯

37.1

6.5

4.8

4.06

13.7

⎯
⎯
⎯
⎯
⎯

DMN2005LP4K

Document number: DS30799 Rev. 6 - 2

2 of 6

www.diodes.com

400 mW
280 °C/W

-65 to +150 °C

V

VGS = 0V, ID = 100µA
V

µA

Ω

mS

pF
pF
pF

nS

= 17V, V

DS

V

= ±8V, VDS = 0V

GS

V

= VGS, ID = 100µA

DS

V

= 4V, ID = 10mA

GS

V

= 2.7V, ID = 200mA

GS

= 2.5V, ID = 10mA

V

GS

V

= 1.8V, ID = 200mA

GS

= 1.5V, ID = 1mA

V

GS

V

= 3V, ID = 10mA

DS

V

= 10V, VGS = 0V

DS

f = 1.0MHz

V

= 10V, Rl = 47Ω, V

DD

= 10Ω.

R

GEN

= 0V

GS

© Diodes Incorporated

= 4.5V,

GEN

June 2012