Diodes DMN2005K User Manual
K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate
ESD protected
SOT23
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Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering & Date Code Information: See Below
Weight: 0.008 grams (approximate)
Drain
Gate
Gate
Prot ectio n
Diode
Equivalent Circuit
Source
Body
Diode
G
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D
DMN2005
e3
S
Ordering Information (Note 4)
Part Number Case Packaging
DMN2005K-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN2005K
Document number: DS30734 Rev. 7 - 2
DM
DM = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
YM
M = Month ex: 9 = September
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November 2013
© Diodes Incorporated
K
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 5) Continuous
Pulsed (Note 6)
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
DMN2005
V
DSS
V
GSS
ID
P
D
R
θJA
T
, T
j
STG
20 V
10
300
600
V
mA
350 mW
357 °C/W
-65 to +150 °C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width 10μS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN2005K
Document number: DS30734 Rev. 7 - 2
BV
I
I
GSS
V
GS(th)
R
DS (ON)
Y
DSS
DSS
fs
20
0.53
40
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0.55
0.
V
VGS = 0V, ID = 100µA
10 µA
5
0.9 V
3.5
1.7
VDS = 17V, VGS = 0V
µA
VGS = 8V, VDS = 0V
V
V
Ω
V
mS
V
= VGS, ID = 100µA
DS
= 1.8V, ID = 200mA
GS
= 2.7V, ID = 200mA
GS
= 3V, ID = 10mA
DS
November 2013
© Diodes Incorporated
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