Diodes DMN2005DLP4K User Manual

Features

• Ultra Low Profile Package

• Low On-Resistance

• Very Low Gate Threshold Voltage, 0.9V Max.

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

ESD PROTECTED

Mechanical Data

• Case: X2-DFN1310-6

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ NiPdAu annealed over Copper leadframe.

X2-DFN1310-6

DMN2005DLP4K

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

D

G

1

S

G

1

S

2

2

D

1

2

Top View

Internal Schematic

e4

Ordering Information (Note 4)

Part Number Case Packaging

DMN2005DLP4K-7 X2-DFN1310-6 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DL

DL = Product Type Marking Code

DMN2005DLP4K

Document number: DS30801 Rev. 9 - 2

1 of 5

www.diodes.com

© Diodes Incorporated

June 2012

θ

)

RAIN CUR

R

N

T

R

C

U

R

R

T

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 5) Continuous

Pulsed (Note 6)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (per element) (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (per element) (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Notes: 5. Device mounted on FR-4 PCB.

6. Pulse width ≤10μS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

2.0

V = 4.5V

GS

V = 2.5V

GS

BV

I

I

V

GS(th

R

DS (ON)

⏐Y

DSS
DSS
GSS

DMN2005DLP4K

V

DSS

V

GSS

I

D

P

D

R

JA

T

, T

STG

J

20

⎯ ⎯
⎯ ⎯

0.53

⎯
⎯
⎯
⎯
⎯

40

⏐

fs

⎯ ⎯

⎯

0.35

0.4

0.45

0.55

0.65
⎯ ⎯

10
±5 μA

0.9 V

1.5

1.7

1.7

3.5

3.5

1.5

V = 5V

DS

20 V

±10
300
350

V

mA

400 mW
231 °C/W

-65 to +150 °C

V

VGS = 0V, ID = 100μA

μA

V

Ω

mS

= 17V, V

DS

V

= ±8V, VDS = 0V

GS

= VGS, ID = 100μA

V

DS

V

= 4V, ID = 10mA

GS

V

= 2.7V, ID = 200mA

GS

= 2.5V, ID = 10mA

V

GS

V

= 1.8V, ID = 200mA

GS

V

= 1.5V, ID = 1mA

GS

V

= 3V, ID = 10mA

DS

GS

= 0V

1.5

(A)
E

1.0

V = 2.0V

GS

V = 1.8V

GS

(A)
EN

1.0

AIN

0.5

D

I, D

0.5

0

012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = 1.5V

GS

V = 1.2V

GS

Figure 1 Typical Output Characteristics

D

I, D

0

0 0.5 1 1.5 2 2.5 3

T = 150°C

A

T = 125°C

A

T = 85°C

A

V , GATE SOURCE VOLT AGE (V)

GS

T = 25°C

A

T = -55°C

A

Figure 2 Typical Transfer Characteristics

DMN2005DLP4K

Document number: DS30801 Rev. 9 - 2

2 of 5

www.diodes.com

June 2012

© Diodes Incorporated