Diodes DMN2004VK User Manual

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected Gate up to 2kV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

ESD protected up to 2kV

Top View

DMN2004VK

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

S

G

SOT563

Bottom View

D

2

G

S

2

Top View

Internal Schematic

1

1

D

1

2

Ordering Information (Note 3)

Part Number Case Packaging

DMN2004VK-7 SOT563 3000/Tape & Reel

DMN2004VK-13 SOT563 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

NAB

YM

NAB = Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2004VK

Document number: DS30865 Rev. 5 - 2

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© Diodes Incorporated

θ

)

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4) Steady

State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

T

= 25°C

A

= 85°C

T

A

V
V

I

P

R

T

J, TSTG

DSS
GSS

I

D

DM

D
JA

DMN2004VK

20 V
±8

540
390

V

mA

1.5 A

250 mW
500 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

20

⎯ ⎯
⎯ ⎯

⎯ ⎯

1

±1 μA

V

μA

V

= 0V, ID = 10μA

GS

V

= 16V, VGS = 0V

DS

V

= ±4.5V, VDS = 0V

GS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

0.5

⎯

0.4

⎯

0.5

0.7

|

fs

200

0.5

⎯ ⎯
⎯

1.0 V

0.55

0.70

0.9

1.4 V

V
V

Ω

V
VGS = 1.8V, ID = 350mA

ms

V
VGS = 0V, IS = 115mA

= VGS, ID = 250μA

DS

= 4.5V, ID = 540mA

GS

= 2.5V, ID = 500mA

GS

=10V, ID = 0.2A

DS

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

⎯ ⎯

iss

C

⎯ ⎯

oss

C

⎯ ⎯

rss

150 pF

25 pF
20 pF

V

DS

f = 1.0MHz

= 16V, VGS = 0V

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to product testing.

DMN2004VK

Document number: DS30865 Rev. 5 - 2

t

⎯

d(on

t

⎯

t

⎯

d(off

t

⎯

f

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8.0

13.3

53.5

36.1

⎯
⎯
⎯
⎯

ns
ns
ns
ns

= 10V, RL = 47Ω,

V

DD

= 200mA. V

I

D

R

= 10Ω

G

= 4.5V,

GEN

March 2012

© Diodes Incorporated

R

CUR

RENT

DMN2004VK

(A)

AIN

D

I, D

0

0

123

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

45

V , GATE-SOURCE VOLTAGE (V)

Fig. 2

GS

Reverse Drain Current vs. Source-Drain Voltage

1

T , CHANNEL TEMPERATURE (°C)

ch

Fig. 3 Gate Threshold Voltage vs. Channel Temperature

V = 5V

GS

Pulsed

T = 125 C

°

T = 150 C

A

°

A

T = 85C

°

A

Ω)

,

ON-RESISTANCE (

DS(on)

R STATIC DRAIN-SOURCE

0.1

I DRAIN CURRENT( A)

,

D

Fig. 4 Static Drain-Source On-Resistance vs. Drain Current

T = -55C

°

A

T = 25C

°

T = 0C

A

°

T = -25C

A

°

A

6

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

DMN2004VK

Document number: DS30865 Rev. 5 - 2

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T, JUNCTION TEMPERA TURE ( C)

I , DRAIN CURRENT (A)

Fig. 7

On-Resistance vs. Drain Current and Gate Voltage

D

Fig. 8

j

Static Drain-Source, On-Resistance vs. Temperature

DMN2004VK

°

DSS

I , DRAIN-SOURCE LEAKAGE

CURRENT (nA)

fs

|Y |, FORWARD TRANSFER ADMITTANCE (S)

I , DRAIN CURRENT (mA)

Fig. 11 Forward Transfer Admittance vs. Drain Current

D

1,000

DR

I , REVERSE DRAIN CURRENT (A)

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 12 Capacitance Variation

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Package Outline Dimensions

K

A

D

G

H

Suggested Pad Layout

G

Z

Y

C2

X

C2

DMN2004VK

B

C

M

L

Dimensions Value (in mm)

C1

Dim Min Max Typ

Z 2.2
G 1.2
X 0.375

Y 0.5
C1 1.7
C2 0.5

SOT563

A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60

D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60

L 0.10 0.30 0.20
M 0.10 0.18 0.11

All Dimensions in mm

DMN2004VK

Document number: DS30865 Rev. 5 - 2

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© Diodes Incorporated

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

DMN2004VK

DMN2004VK

Document number: DS30865 Rev. 5 - 2

6 of 6

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March 2012

© Diodes Incorporated