Diodes DMN2004VK User Manual

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected Gate up to 2kV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

ESD protected up to 2kV

Top View

DMN2004VK

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

S

G

SOT563

Bottom View

D

2

G

S

2

Top View

Internal Schematic

1

1

D

1

2

Ordering Information (Note 3)

Part Number Case Packaging

DMN2004VK-7 SOT563 3000/Tape & Reel

DMN2004VK-13 SOT563 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

NAB

YM

NAB = Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2004VK

Document number: DS30865 Rev. 5 - 2

1 of 6

www.diodes.com

March 2012

© Diodes Incorporated

θ

)

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4) Steady

State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

T

= 25°C

A

= 85°C

T

A

V
V

I

P

R

T

J, TSTG

DSS
GSS

I

D

DM

D
JA

DMN2004VK

20 V
±8

540
390

V

mA

1.5 A

250 mW
500 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

20

⎯ ⎯
⎯ ⎯

⎯ ⎯

1

±1 μA

V

μA

V

= 0V, ID = 10μA

GS

V

= 16V, VGS = 0V

DS

V

= ±4.5V, VDS = 0V

GS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

0.5

⎯

0.4

⎯

0.5

0.7

|

fs

200

0.5

⎯ ⎯
⎯

1.0 V

0.55

0.70

0.9

1.4 V

V
V

Ω

V
VGS = 1.8V, ID = 350mA

ms

V
VGS = 0V, IS = 115mA

= VGS, ID = 250μA

DS

= 4.5V, ID = 540mA

GS

= 2.5V, ID = 500mA

GS

=10V, ID = 0.2A

DS

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

⎯ ⎯

iss

C

⎯ ⎯

oss

C

⎯ ⎯

rss

150 pF

25 pF
20 pF

V

DS

f = 1.0MHz

= 16V, VGS = 0V

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to product testing.

DMN2004VK

Document number: DS30865 Rev. 5 - 2

t

⎯

d(on

t

⎯

t

⎯

d(off

t

⎯

f

www.diodes.com

2 of 6

8.0

13.3

53.5

36.1

⎯
⎯
⎯
⎯

ns
ns
ns
ns

= 10V, RL = 47Ω,

V

DD

= 200mA. V

I

D

R

= 10Ω

G

= 4.5V,

GEN

March 2012

© Diodes Incorporated