K
q
p
n
DMN2004T
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected up to 2kV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
ESD PROTECTED TO 2kV
SOT-523
Top View
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Drai
D
Gate
Gate
Protection
Diode
E
uivalent Circuit
Source
G
To
S
View
Ordering Information (Note 3)
Part Number Case Packaging
DMN2004TK-7 SOT-523 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
NAB
YM
DMN2004TK
Document number: DS30936 Rev. 5 - 2
NAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
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November 2010
© Diodes Incorporated
K
θ
)
)
r
)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
= 25°C
Drain Current (Note 4) Steady
State
T
A
= 85°C
T
A
Pulsed Drain Current (Note 5)
Thermal Characteristics @T
NEW PRODUCT
Characteristic Symbol Value Units
= 25°C unless otherwise specified
A
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
V
V
I
P
R
T
J, TSTG
DSS
GSS
I
D
DM
D
JA
DMN2004T
20 V
±8 V
540
390
mA
1.5 A
150 mW
833 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
DSS
I
DSS
I
⎯ ⎯
GSS
20
⎯
⎯
⎯ ⎯
0.8
300
0.9
V
nA
⎯
nA
±1 μA
VGS = 0V, ID = 10μA
= 16V, VGS = 0V
V
DS
= 20V, VGS = 0V
V
DS
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V
GS(th
R
DS (ON)
|Y
V
SD
|
fs
⎯
0.5
200
0.5
⎯
0.4
0.5
0.55
0.70
0.7
⎯ ⎯
⎯
1.0 V
VDS = VGS, ID = 250μA
V
Ω
0.9
1.4 V
V
VGS = 1.8V, ID = 350mA
ms
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
= 4.5V, ID = 540mA
GS
= 2.5V, ID = 500mA
GS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
⎯ ⎯
iss
C
⎯ ⎯
oss
C
⎯ ⎯
rss
150 pF
25 pF
20 pF
V
f = 1.0MHz
= 16V, VGS = 0V
DS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes: 4. Device mounted on FR-4 PCB.
5. Pulse width ≤10μS, Duty Cycle ≤1%
6. Short duration pulse test used to minimize self-heating effect.
t
d(on
t
d(off
t
t
f
⎯
⎯
⎯
⎯
8.5
9.1
51
28
⎯
⎯
⎯
⎯
ns
ns
ns
ns
V
= 10V, RL = 47Ω, ID = 200mA,
DD
4.5V, RG = 10Ω
V
GEN =
DMN2004TK
Document number: DS30936 Rev. 5 - 2
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November 2010
© Diodes Incorporated
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RAIN CUR
REN
T
NEW PRODUCT
DMN2004T
(A)
D
I, D
0
0
12345
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
V , GATE-SOURCE VOLTAGE (V)
Fig. 2
GS
Reverse Drain Current vs. Source-Drain Voltage
1
0.5
Ω
ON-RESISTANCE ( )
DS(on)
R , STA T IC DRAIN-SOURCE
0.1
T , CHANNEL TEMPERATURE (°C)
ch
Fig. 3 Gate Threshold Voltage
Fig. 4 Static Drain-Sou r ce On-Resi stance
vs. Channel Tem perature
V = 5V
GS
Pulsed
T = 125 C
°
T = 150 C
°
Ω
A
A
T = 85C
°
A
,
I DRAIN CURRENT(A )
D
vs. Drain Current
Ω
ON-RESISTANCE ( )
DS(on)
R , STA T IC DRAIN-SOURCE
T = 25C
°
A
T = 0C
°
A
T = -25C
T = -55 C
°
A
DS(on)
°
A
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( ) (NORMALIZED)
6
I , DRAIN CURRENT (A)
D
Fig. 5 Static Drain-Source On-Resistance
vs. Drain C urrent
DMN2004TK
Document number: DS30936 Rev. 5 - 2
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November 2010
© Diodes Incorporated
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NEW PRODUCT
DMN2004T
Ω
Ω
ON-RESISTANCE ( )
DS(on)
R , STATIC DRAIN-SOURCE
I , DRAIN CURRENT (A)
On-Resi stance vs. Drain Current and Gate V ol tage
Fig. 7
D
DS(on)
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( ) (NORMALIZED)
T, JUNCTION TEMPERATURE ( C)
j
Static Drain-Source, On-Resistance vs. Temperature
Fig. 8
°
DSS
I , DRAIN-SOURCE LEAKAGE CURRENT (nA)
fs
|Y |, FORWARD TRANSFER ADMITTANCE (S)
I , DRAIN CURRENT (mA)
Fig. 11 Forward Transfer Admittance vs. Drain Current
D
DMN2004TK
Document number: DS30936 Rev. 5 - 2
1,000
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DR
I , REVERSE DRAIN CURRENT (A)
V , DRAIN SOURC E VOLTAGE (V)
DS
Fig. 12 Capacitance Variation
November 2010
© Diodes Incorporated
K
Package Outline Dimensions
NEW PRODUCT
Suggested Pad Layout
K
J
Z
DMN2004TK
Document number: DS30936 Rev. 5 - 2
DMN2004T
A
C
B
G
H
N
D
Y
X
L
E
M
C
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Dim Min Max Typ
Dimensions Value (in mm)
SOT-523
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
⎯ ⎯
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
0° 8°
α
All Dimensions in mm
Z 1.8
X 0.4
Y 0.51
C 1.3
E 0.7
0.50
⎯
November 2010
© Diodes Incorporated
K
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
NEW PRODUCT
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMN2004T
DMN2004TK
Document number: DS30936 Rev. 5 - 2
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