Diodes DMN2004TK User Manual

K

q

p

n

DMN2004T

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected up to 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

SOT-523

Top View

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Drai

D

Gate

Gate

Protection

Diode

E

uivalent Circuit

Source

G

To

S

View

Ordering Information (Note 3)

Part Number Case Packaging

DMN2004TK-7 SOT-523 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012

Code T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

NAB

YM

DMN2004TK

Document number: DS30936 Rev. 5 - 2

NAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)

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November 2010

© Diodes Incorporated

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)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

= 25°C

Drain Current (Note 4) Steady
State

T

A

= 85°C

T

A

Pulsed Drain Current (Note 5)

Thermal Characteristics @T

NEW PRODUCT

Characteristic Symbol Value Units

= 25°C unless otherwise specified

A

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

V
V

I

P

R

T

J, TSTG

DSS

GSS

I

D

DM

D
JA

DMN2004T

20 V
±8 V

540
390

mA

1.5 A

150 mW
833 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

DSS

I

DSS

I

⎯ ⎯

GSS

20

⎯

⎯

⎯ ⎯

0.8

300

0.9

V

nA

⎯

nA

±1 μA

VGS = 0V, ID = 10μA

= 16V, VGS = 0V

V

DS

= 20V, VGS = 0V

V

DS

VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

⎯

0.5

200

0.5

⎯

0.4

0.5

0.55

0.70

0.7

⎯ ⎯
⎯

1.0 V

VDS = VGS, ID = 250μA

V

Ω

0.9

1.4 V

V

VGS = 1.8V, ID = 350mA

ms

VDS =10V, ID = 0.2A

VGS = 0V, IS = 115mA

= 4.5V, ID = 540mA

GS

= 2.5V, ID = 500mA

GS

DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

⎯ ⎯

iss

C

⎯ ⎯

oss

C

⎯ ⎯

rss

150 pF

25 pF
20 pF

V

f = 1.0MHz

= 16V, VGS = 0V

DS

SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 4. Device mounted on FR-4 PCB.

5. Pulse width ≤10μS, Duty Cycle ≤1%

6. Short duration pulse test used to minimize self-heating effect.

t

d(on

t

d(off

t

t

f

⎯
⎯
⎯
⎯

8.5

9.1
51
28

⎯
⎯
⎯
⎯

ns
ns
ns
ns

V

= 10V, RL = 47Ω, ID = 200mA,

DD

4.5V, RG = 10Ω

V

GEN =

DMN2004TK

Document number: DS30936 Rev. 5 - 2

2 of 6

www.diodes.com

November 2010

© Diodes Incorporated