Diodes DMN2004K User Manual

K

M

DMN2004

Product Summary

I

V

R

(BR)DSS

20V

0.55 @ V

0.9 @ VGS = 1.8V

DS(ON)

GS

= 4.5V

D

TA = +25°C

630mA
410mA

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters
 Power Management Functions

ESD PROTECTED TO 2kV

SOT23

Top View

Features and Benefits

 Low On-Resistance: R
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected up to 2KV
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound. UL

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  Matte Tin annealed over Alloy 42 leadframe.

 Terminal Connections: See Diagram
 Weight: 0.008 grams (approximate)

Gate

Gate
Protection
Diode

Equivalent Circuit

N-CHANNEL ENHANCEMENT MODE MOSFET

= 550

DS(ON)

Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

Drain

G

Source

m @ VGS = 4.5V

(max)

D

Top View

e3

S

Ordering Information (Note 4)

Part Number Case Packaging

DMN2004K-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

NAB

Chengdu A/T Site

YM

NAB

Shanghai A/T Site

YM

NAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

DMN2004K

Document number: DS30938 Rev. 9 - 2

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July 2013

© Diodes Incorporated

K

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 5) VGS = 4.5V

Drain Current (Note 5) VGS = 1.8V

Steady

State

Steady

State

T

= +25°C

A

= +85°C

T

A

= +25°C

T

A

T

= +85°C

A

Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

R

T

J, TSTG

JA

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS
DSS
GSS

20

 
 
 

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th)

0.5



0.4

Static Drain-Source On-Resistance

R

DS(ON)



0.5

0.7

Forward Transfer Admittance
Source Current
Diode Forward Voltage (Note 7)

|Y

fs

I

 

S

V

SD

200

|

0.6

 



DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.

6. Pulse width 10µS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

C

iss

C

oss

C

rss

R

g

Q



g

Q

gs

Q

gd

t

D(on)

t



r

t

D(off)

t



f

t



rr

Q

rr

 

 

 



292

0.9







0.2

0.2

5.7

8.4



59.4

37.6

5.5



0.85

DMN2004K

Document number: DS30938 Rev. 9 - 2

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V

DSS

V

GSS

I

D

I

D

I

DM

1 µA

1

1.0 V

0.55

0.70

0.9

0.5 A
1 V

150 pF

25 pF
20 pF












DMN2004

20 V
±8 V

630
450

410
300

1.5 A

350 mW
357 °C/W

-65 to +150 °C

V

V

= 0V, ID = 10µA

GS

VDS = 16V, VGS = 0V

µA

V

= 4.5V, VDS = 0V

GS

VDS = VGS, ID = 250µA

= 4.5V, ID = 540mA

V

GS



VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA

ms

VDS =10V, ID = 0.2A

VGS = 0V, IS = 500mA

V

= 16V, VGS = 0V

DS

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1.0MHz

nC

V

= 15V, VGS = 4.5V, ID = 0.5A

DS

= 8V, VDS = 15V,

V

ns

ns
nC

GS

= 6, RL = 30

R

G

IS = 0.5A, dI/dt = -100A/µs

IS = 0.5A, dI/dt = -100A/µs

mA

mA



July 2013

© Diodes Incorporated

K

R

CUR

RENT

R

N CUR

R

N

T

GATE THRESH

O

OLTAG

R

T

TIC

R

OUR

C

DMN2004

(A)

AIN

D

I, D

E (V)

LD V

0.9

0.6

0.3

0.9

0.8

0.7

0.6

0.5

1,000

V = 2.2V

GS

V = 2.0V

GS

900

V = 10V

DS

Pulsed

800

V = 1.8V

GS

V = 1.6V

GS

700

(mA)

600

E

500

V = 1.4V

GS

V = 1.2V

GS

0

0

12345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

1

V= 10V

DS

I= 1mA

D

Pulsed

400

AI

300

D

D

I,

200

T = 5CA8

100

0

0.4 0.8 1.2

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2



Reverse Drain Current vs. Source-Drain Voltage

1

V = 10V

GS

Pulsed

0.5

T = 150 C

A

T = 150 C

A

°

°

°

T = -55C

A

T = 125 C

A

T = 25C

°

A

°

°

1.6

T = 85C

°

A

2

0.4

0.3

0.2

GS(th),

0.1

V

0

-75 -50 -25

T , CHANNEL TEMPERATURE (°C)

ch

0255075

100

125 150

Figure 3 Gate Threshold Voltage

vs. Channel T emperature

1

V = 5V

GS

Pulsed

E

T = 125 C

°

T = 150 C

°

0.5



A

A

T = 85C

°

A

AIN-S
D

A
, S

DS(on)

ON-RESISTANCE ( )

T = 25C

°

T = 0C

°

A

T = -25C

A

0.6

0.1

0.2

A

0.4

I , DRAIN CURRENT (A)

D

°

0.8

T = -55C

°

A

1.0

Figure 5 Static Drain-Source On-Resistance

vs. Drain Current

DMN2004K

Document number: DS30938 Rev. 9 - 2

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ON-RESISTANCE ( )

DS(on)

R , STA T IC DRAIN-SOURCE

0.1

1.0

0.9

0.8

0.7

0.6

0.5



0.4

0.3

0.2

DS(on)

R , STA T IC DRAIN-SOURCE

ON-RESISTANCE ( ) (NORMALIZED)

0.1

T = -55C

T = 25C

°

A

T = 0C

°

T = -25C

°

A

0.2

A

0.4 0.6 0.8

,

I DRAIN CURRENT (A)

D

Figure 4 Static Drain-S ource On-Resistance

vs. Drain C urr ent

T = 25°C

A

I = 540mA

D

0

0

2

V , GATE-SOURCE VOLTAGE (V)

GS

4

Figure 6 Static Drain-Source, On-Resis tance

vs. G ate-Sour ce Voltage

°

A

© Diodes Incorporated

1.0

6

July 2013

K

C

C

P

CIT

C

F

DMN2004

0.5

0.9

1

T = 25°C

J

0.4

DS(on)

R , STATIC DRAIN-SOUR CE

0.8



0.7

0.6

0.5

ON-RESISTANCE ( )

0.4

0.3

0.2
0

Figure 7

10,000

V= 1.8V

GS

V = 2.5V

GS

V = 4.5V

GS

0.2 0.4

I , DRAIN CURRENT (A)

D

0.6

0.8 1 1.2

On-Resistance vs. Drain Current and Gate Voltage



DS(on)

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( ) (NORMALIZED)

Figure 8

0.3

0.2

0.1

0

-50 -25

T, JUNCTION TEMPERATURE ( C)

Static Drain-Source, On-Resistance vs. Temperature

1

V = 0V

GS

025

j

V = 4.5V,

GS

I = 540mA

D

V = 10V,
I = 280mA

D

50

GS

100

75

125

150

°

1,000

100

10

TJ = 150°C

TJ = 100°C

0.1

T = 125C

°

A

T = 85C

°

A

T = 150 C

A

°

T = 25C

°

A

0.01

T = 0C

°

A

1

T = 25 °C

J

0.1

DSS

I , DRAIN-SOURCE LEAKAGE CURRENT (nA)

24

681012 14

V,

DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Drai n Source Leakage Cur r ent vs. Voltage

1

T =A-55 C

V = 10V

GS

°

16

18

20

DR

I , REVERSE DRAIN CURRENT (A)

0.001
V , SOURCE

0.50

DRAIN- VOLTAGE (V)

SD

T = -25C

T= -55C

°

A

°

A

Figure 10 Reverse Drain Current vs. Source-Drain Voltage

120

f = 1MHz
V = 0V

GS

1

100

C

iss

0.1

T = 25C

A

T =A 85 C

°

°

)
E (p

AN
A

80

60

A
,

40

T =A 150 C

°

T

C

oss

20

fs

|Y |, FORWARD TRANSFER ADMITTANCE (S)

0.01
1

10

I , DRAIN CURRENT (mA)

D

100

1,000

Figure 11 Forward Transfer Admittance vs. Drain Current

0

0

C

rss

4

2

V , DRAIN SOURCE VOLTAGE (V)

DS

8

6

10 12

14 16

Figure 12 Capacitance Variation

18

20

DMN2004K

Document number: DS30938 Rev. 9 - 2

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July 2013

© Diodes Incorporated

K

OUR

CE C

URREN

T

G

T

OUR

C

OLT

G

DMN2004

1

(A)

0.1

T = 25°C

A

10

E (V)
A

E V

8

V = 15V

6

DS

I = 0.5A

D

4

0.01

S

I, S

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 13 Diode Forward Voltage vs. Current

E-S
A

2

GS

V,

0

00.511.522.53
Q , TOTAL GATE CHARGE (nC)

g

Figure 14 Gate-Charge Characteristics

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

K

J

A

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

C

B

B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535

H

K1

F

D

G

L

M

G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55
M 0.085 0.18 0.11

0° 8° -



All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

DMN2004K

Document number: DS30938 Rev. 9 - 2

Y

Z

C

Dimensions Value (in mm)

Z 2.9
X 0.8
Y 0.9

C 2.0

E 1.35

X

E

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
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This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

DMN2004

DMN2004K

Document number: DS30938 Rev. 9 - 2

6 of 6

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July 2013

© Diodes Incorporated