Diodes DMN2004K User Manual

K

M

DMN2004

Product Summary

I

V

R

(BR)DSS

20V

0.55 @ V

0.9 @ VGS = 1.8V

DS(ON)

GS

= 4.5V

D

TA = +25°C

630mA
410mA

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters
 Power Management Functions

ESD PROTECTED TO 2kV

SOT23

Top View

Features and Benefits

 Low On-Resistance: R
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected up to 2KV
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound. UL

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  Matte Tin annealed over Alloy 42 leadframe.

 Terminal Connections: See Diagram
 Weight: 0.008 grams (approximate)

Gate

Gate
Protection
Diode

Equivalent Circuit

N-CHANNEL ENHANCEMENT MODE MOSFET

= 550

DS(ON)

Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

Drain

G

Source

m @ VGS = 4.5V

(max)

D

Top View

e3

S

Ordering Information (Note 4)

Part Number Case Packaging

DMN2004K-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

NAB

Chengdu A/T Site

YM

NAB

Shanghai A/T Site

YM

NAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

DMN2004K

Document number: DS30938 Rev. 9 - 2

1 of 6

www.diodes.com

July 2013

© Diodes Incorporated

K

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 5) VGS = 4.5V

Drain Current (Note 5) VGS = 1.8V

Steady

State

Steady

State

T

= +25°C

A

= +85°C

T

A

= +25°C

T

A

T

= +85°C

A

Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

R

T

J, TSTG

JA

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS
DSS
GSS

20

 
 
 

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th)

0.5



0.4

Static Drain-Source On-Resistance

R

DS(ON)



0.5

0.7

Forward Transfer Admittance
Source Current
Diode Forward Voltage (Note 7)

|Y

fs

I

 

S

V

SD

200

|

0.6

 



DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.

6. Pulse width 10µS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

C

iss

C

oss

C

rss

R

g

Q



g

Q

gs

Q

gd

t

D(on)

t



r

t

D(off)

t



f

t



rr

Q

rr

 

 

 



292

0.9







0.2

0.2

5.7

8.4



59.4

37.6

5.5



0.85

DMN2004K

Document number: DS30938 Rev. 9 - 2

2 of 6

www.diodes.com

V

DSS

V

GSS

I

D

I

D

I

DM

1 µA

1

1.0 V

0.55

0.70

0.9

0.5 A
1 V

150 pF

25 pF
20 pF












DMN2004

20 V
±8 V

630
450

410
300

1.5 A

350 mW
357 °C/W

-65 to +150 °C

V

V

= 0V, ID = 10µA

GS

VDS = 16V, VGS = 0V

µA

V

= 4.5V, VDS = 0V

GS

VDS = VGS, ID = 250µA

= 4.5V, ID = 540mA

V

GS



VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA

ms

VDS =10V, ID = 0.2A

VGS = 0V, IS = 500mA

V

= 16V, VGS = 0V

DS

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1.0MHz

nC

V

= 15V, VGS = 4.5V, ID = 0.5A

DS

= 8V, VDS = 15V,

V

ns

ns
nC

GS

= 6, RL = 30

R

G

IS = 0.5A, dI/dt = -100A/µs

IS = 0.5A, dI/dt = -100A/µs

mA

mA



July 2013

© Diodes Incorporated