Diodes DMN2004DWK User Manual

DMN2004DWK

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

20V

0.55Ω @ V

DS(on) max

= 4.5V

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state

resistance (R

) and yet maintain superior switching

DS(on)

performance, making it ideal for high efficiency power management

applications.

Applications

• Load Switch

NEW PRODUCT

ESD PROTECTED TO 2kV

540mA

SOT363

Top View

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Top View

Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging

DMN2004DWK-7 SOT363 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

NAB YM

NAB = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2004DWK

Document number: DS30935 Rev. 5 - 2

1 of 6

www.diodes.com

January 2014

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 5) Steady State

Pulsed Drain Current (Note 6)

= +25°C

= +85°C

DSS

GSS

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

J, TSTG

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

DSS

⎯ ⎯

DSS

⎯ ⎯

GSS

⎯ ⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

GS(th)

0.5

⎯

0.4

Static Drain-Source On-Resistance

DS (ON)

⎯

0.5

0.7

Forward Transfer Admittance

Diode Forward Voltage (Note 7)

200

0.5

⎯ ⎯

⎯

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 PCB.

6. Pulse width ≤10µS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

DMN2004DWK

Document number: DS30935 Rev. 5 - 2

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⎯ ⎯

oss

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⎯ ⎯

2 of 6

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DMN2004DWK

20 V

±8 V

540 390

1.5 A

200 mW

625 °C/W

-65 to +150 °C

VGS = 0V, ID = 10µA

1 µA

±1

µA

1.0 V

0.55

0.70

Ω

0.9

1.4 V

150 pF

25 pF

20 pF

VDS = 16V, VGS = 0V

VGS = ±4.5V, VDS = 0V

VDS = VGS, ID = 250µA

VGS = 2.5V, ID = 500mA

VGS = 1.8V, ID = 350mA

VGS = 0V, IS = 115mA

f = 1.0MHz

= 4.5V, ID = 540mA

=10V, ID = 0.2A

= 16V, V

= 0V

January 2014

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