Diodes DMN2004DWK User Manual

DMN2004DWK

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

20V

R

0.55Ω @ V

DS(on) max

= 4.5V

GS

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state

resistance (R

) and yet maintain superior switching

DS(on)

performance, making it ideal for high efficiency power management

applications.

Applications

• Load Switch

NEW PRODUCT

ESD PROTECTED TO 2kV

I

D

540mA

SOT363

Top View

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

S

G

D

2

S

2

Top View

Internal Schematic

1

1

G

D

1

2

Ordering Information (Note 4)

Part Number Case Packaging

DMN2004DWK-7 SOT363 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

NAB YM

NAB YM

NAB YM

NAB YM

NAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 5) Steady
State

Pulsed Drain Current (Note 6)

= +25°C

T

A

T

= +85°C

A

V

DSS

V

GSS

I

D

I

DM

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

P

R

T

J, TSTG

D

JA

θ

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

DSS

I

⎯ ⎯

DSS

I

⎯ ⎯

GSS

20

⎯ ⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th)

0.5

⎯

0.4

Static Drain-Source On-Resistance

R

DS (ON)

⎯

0.5

0.7

Forward Transfer Admittance

Diode Forward Voltage (Note 7)

|Y

|

fs

V

SD

200

0.5

⎯ ⎯

⎯

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 PCB.

6. Pulse width ≤10µS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

DMN2004DWK

Document number: DS30935 Rev. 5 - 2

C

iss

C

⎯ ⎯

oss

C

rss

⎯ ⎯

⎯ ⎯

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DMN2004DWK

20 V

±8 V

540
390

1.5 A

200 mW

625 °C/W

-65 to +150 °C

V

VGS = 0V, ID = 10µA

1 µA

±1

µA

1.0 V

0.55

0.70

Ω

0.9

ms

1.4 V

150 pF

25 pF

20 pF

VDS = 16V, VGS = 0V

VGS = ±4.5V, VDS = 0V

VDS = VGS, ID = 250µA

V

GS

VGS = 2.5V, ID = 500mA

VGS = 1.8V, ID = 350mA

V

DS

VGS = 0V, IS = 115mA

V

DS

f = 1.0MHz

mA

= 4.5V, ID = 540mA

=10V, ID = 0.2A

= 16V, V

= 0V

GS

January 2014

© Diodes Incorporated

RAIN CUR

REN

T

NEW PRODUCT

DMN2004DWK

(A)

D

I, D

0

0

12

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

34

5

V , GATE-SOURCE VOLTAGE (V)

GS

Reverse Drain Current vs. Source-Drain Voltage

Fig. 2

1

T , CHANNEL TEMPERATURE (°C)

ch

Fig. 3 Gate Threshold Voltage vs. Channel Temperature

Ω

Ω

ON-RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

0.1

,

I DRAIN CURRENT (A)

Fig. 4 Static Drain-Sour ce On-Resistance Vs. Drain Current

D

ON-RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

6

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance vs. Drai n Current

D

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NEW PRODUCT

T , JUNCTION TEMPERATURE ( C)

I , DRAIN CURRENT (A)

Fig. 7

On-Resistance vs. Drain Current and Gate Voltage

D

Fig. 8

j

Static Drain-Source, On-Resistance vs. Temperature

DMN2004DWK

°

DSS

I , DRAIN-SOURCE LEAKAGE CURRENT (nA)

fs

|Y |, FORWARD TRANSFER ADMITTANCE (S)

I , DRAIN CURRENT (mA)

Fig. 11 Forward Transfer Admittance vs. Drain Current

D

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DR

I , REVERSE DRAIN CURRENT (A)

V , DRAIN SOURCE VOLTAGE (V)

DS

Fig. 12 Capacitance Variation

© Diodes Incorporated

January 2014

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

NEW PRODUCT

K

J

H

B C

M

D

L

F

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

G

Z

Y

X

C2

C2

C1

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SOT363

Dim Min Max

A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22

α

All Dimensions in mm

Dimensions Value (in mm)

0° 8°

Z 2.5
G 1.3
X 0.42
Y 0.6

C1 1.9
C2 0.65

DMN2004DWK

January 2014

© Diodes Incorporated

DMN2004DWK

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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NEW PRODUCT

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

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