Diodes DMN2004DMK User Manual
K
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected up to 2KV
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
ESD PROTECTED TO 2kV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
SOT26
Top View
D
2
S
2
1
1
G
D
1
2
S
G
Top View
Internal Schematic
DMN2004DM
Ordering Information (Note 3)
Part Number Case Packaging
DMN2004DMK-7 SOT26 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NAB YM
NAB YM
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN2004DMK
Document number: DS30937 Rev. 4 - 2
NAB = Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
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K
θ
)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4) Steady
State
Pulsed Drain Current (Note 5)
Thermal Characteristics @T
NEW PRODUCT
Total Power Dissipation (Note 4)
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
= 25°C
T
A
= 85°C
T
A
V
V
I
P
R
T
J, TSTG
DSS
GSS
I
D
DM
D
JA
DMN2004DM
20 V
±8 V
540
390
mA
1.5 A
225 mW
556 °C/W
-65 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
20
⎯ ⎯
⎯ ⎯
⎯ ⎯
1
±1 μA
V
μA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V
GS(th
R
DS (ON)
|Y
V
SD
|
fs
⎯
0.5
200
0.5
⎯
0.4
0.5
0.7
1.0 V
0.55
0.70
0.9
⎯ ⎯
⎯
1.4 V
Ω
ms
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 4. Device mounted on FR-4 PCB.
5. Pulse width ≤10μS, Duty Cycle ≤1%.
6. Short duration pulse test used to minimize self-heating effect.
C
⎯ ⎯
iss
C
⎯ ⎯
oss
C
⎯ ⎯
rss
150 pF
25 pF
20 pF
V
= 0V, ID = 10μA
GS
V
= 16V, VGS = 0V
DS
V
= ±4.5V, VDS = 0V
GS
VDS = VGS, ID = 250μA
V
= 4.5V, ID = 540mA
GS
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS = 10V, ID = 0.2A
VGS = 0V, IS = 115mA
= 16V, VGS = 0V
V
DS
f = 1.0MHz
DMN2004DMK
Document number: DS30937 Rev. 4 - 2
2 of 6
www.diodes.com
November 2011
© Diodes Incorporated
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