Diodes DMN2004DMK User Manual

K

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected up to 2KV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

SOT26

Top View

D

2

S

2

1

1

G

D

1

2

S

G

Top View

Internal Schematic

DMN2004DM

Ordering Information (Note 3)

Part Number Case Packaging

DMN2004DMK-7 SOT26 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

NAB YM

NAB YM

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2004DMK

Document number: DS30937 Rev. 4 - 2

NAB = Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)

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θ

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 4) Steady
State

Pulsed Drain Current (Note 5)

Thermal Characteristics @T

NEW PRODUCT

Total Power Dissipation (Note 4)

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

= 25°C

T

A

= 85°C

T

A

V
V

I

P

R

T

J, TSTG

DSS
GSS

I

D

DM

D
JA

DMN2004DM

20 V
±8 V

540
390

mA

1.5 A

225 mW
556 °C/W

-65 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

20

⎯ ⎯
⎯ ⎯
⎯ ⎯

1

±1 μA

V

μA

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

⎯

0.5

200

0.5

⎯

0.4

0.5

0.7

1.0 V

0.55

0.70

0.9

⎯ ⎯

⎯

1.4 V

Ω

ms

DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 4. Device mounted on FR-4 PCB.

5. Pulse width ≤10μS, Duty Cycle ≤1%.

6. Short duration pulse test used to minimize self-heating effect.

C

⎯ ⎯

iss

C

⎯ ⎯

oss

C

⎯ ⎯

rss

150 pF

25 pF
20 pF

V

= 0V, ID = 10μA

GS

V

= 16V, VGS = 0V

DS

V

= ±4.5V, VDS = 0V

GS

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 540mA

GS

VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS = 10V, ID = 0.2A
VGS = 0V, IS = 115mA

= 16V, VGS = 0V

V

DS

f = 1.0MHz

DMN2004DMK

Document number: DS30937 Rev. 4 - 2

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R

CUR

RENT

NEW PRODUCT

(A)

AIN

D

I, D

0

0

1234

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

5

V , GATE-SOURCE VOLTAGE (V)

GS

Reverse Drain Current vs. Source-Drain Voltage

Fig. 2

1

DMN2004DM

0.1

I DRAIN CURRENT(A)

T , CHANNEL TEM PERATURE (°C)

Fig. 3 Gate Threshold Voltage vs. Channel T e mperature

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

DMN2004DMK

Document number: DS30937 Rev. 4 - 2

ch

I , DRAIN CURRENT (A)

D

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Fig. 4 Static D r ai n- Source On-Resistance vs. Dr ain Current

,

D

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© Diodes Incorporated

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K

NEW PRODUCT

DMN2004DM

I , DRAIN CURRENT (A)

On-Resistance vs. Drain Current and Gate Voltage

Fig. 7

D

T, JUNCTION TEMPERATURE ( C)

j

Static Drain-Source, On-Resistance vs. Temperature

Fig. 8

°

DSS

I , DRAIN-SOURCE LEAKAGE CURRENT (nA)

s

f

|Y |, FORWARD TRANSFER ADMITT ANCE (S)

I , DRAIN CURRENT (mA)

D

Fig. 11 Forwar d Tr ansfer Admit t ance vs. Dra in Current

DMN2004DMK

Document number: DS30937 Rev. 4 - 2

1000

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DR

I , REVERSE DRAIN CURRENT (A)

V , DRAIN SOURCE VOLTAGE (V)

DS

Fig. 12 Capacitance Variation

November 2011

© Diodes Incorporated

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Package Outline Dimensions

NEW PRODUCT

Suggested Pad Layout

K

J

Z

DMN2004DMK

Document number: DS30937 Rev. 4 - 2

DMN2004DM

A

B C

H

M

D

C2

G

Y

X

L

C2

C1

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Dim Min Max Typ

Dimensions Value (in mm)

Z 3.20
G 1.60
X 0.55
Y 0.80

C1 2.40
C2 0.95

SOT26

A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D

⎯ ⎯

H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15

0° 8°

α

All Dimensions in mm

0.95

⎯

November 2011

© Diodes Incorporated

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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NEW PRODUCT

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN2004DM

DMN2004DMK

Document number: DS30937 Rev. 4 - 2

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