Diodes DMN1150UFB User Manual

ADVANCE INFORMATION

Product Summary

V

(BR)DSS

12V

R

0.15Ω @ V

0.185Ω @ VGS = 2.5V

0.21Ω @ VGS = 1.8V

DS(on) max

= 4.5V

GS

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• DC-DC Converters

• Power management functions

NEW PRODUCT

ESD PROTECTED

X1-DFN1006-3

Bottom View

I

D

1.41A

1.25A

1.16A

DMN1150UFB

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Very Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

GS(TH)

, 1.0V max

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

S

D

G

Top View

Internal Schematic

e4

Gate

Gate
Protection
Diode

Equivalent Circuit

Drain

Source

Body
Diode

Ordering Information (Note 4)

Part Number Case Packaging

DMN1150UFB-7B X1-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN1150UFB

Document number: DS36101 Rev. 3 - 2

E5

Top View

www.diodes.com

E5 = Product Type Marking Code
Bar Denotes Gate and Source Side

1 of 6

February 2013

© Diodes Incorporated

θ

)

g

g

g

r

DMN1150UFB

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current

Steady

State

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

DM

I

S

12 V
±6 V

1.41

1.15

A

7 A
1 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

NEW PRODUCT

= +25°C

T

A

TA = +70°C

Steady state

P

R

T

J, TSTG

D

JA

0.5

0.3

W

251 °C/W

-55 to +150 °C

ADVANCE INFORMATION

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

12 — — V
— —
— —

100 nA

±1 µA

VGS = 0V, ID = 250μA
VDS = 12V, VGS = 0V

VGS = ±6V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS (ON)

V

SD

0.35

—

— 0.7 1.2 V

—
—
—
—

1.0 V
150
185
210

VDS = VGS, ID = 250μA
V

mΩ

V
V
VGS = 0V, IS = 150mA

= 4.5V, ID = 1A

GS

= 2.5V, ID = 1A

GS

= 1.8V, ID = 1A

GS

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on)

t

D(off)

s

d

t

t

f

— 106 —
— 23 —
— 21 —
—

92.4
— 1.5 —
— 0.2 —
— 0.2 —
— 4.1 —
— 34.5 —
— 57 —
— 30 —

—

pF
pF
pF

Ω

=10V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC

= 4V, ID = 1A

V

DS

nC
ns
ns

V

= 4V,VGS = 6V, ID = 1A

DD

R

ns

= 1Ω

G

ns

DMN1150UFB

Document number: DS36101 Rev. 3 - 2

2 of 6

www.diodes.com

February 2013

© Diodes Incorporated