Diodes DMN10H220LE User Manual

NEW PRODUCT

Product Summary

V

R

(BR)DSS

100V

220mΩ @ V

250mΩ @ VGS = 4.5V

DS(on) max

GS

= 10V

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• DC-DC Converters

• Power Management Functions

NEW PRODUCT

SOT223

Top View

Ordering Information (Note 4)

I

D

2.3A

2.1A

Pin Out - Top View

DMN10H220LE

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

D

G

S

Equivalent Circuit

Part Number Compliance Case Packaging

DMN10H220LE-13 Standard SOT223 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

YWW

10H220

DMN10H220LE

Document number: DS36475 Rev. 2 - 2

10H220

YWW

= Manufacturer’s Marking
10H220 = Marking Code
YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)

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V

V

DMN10H220LE

Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Maximum Continuous Body Diode Forward Current (Note 5)

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

V

V

T

= +25°C

A

= +70°C

T

A

TC = +25°C

= +70°C

T

C

DSS

GSS

I

I

I

I

DM

alue Units

D

D

S

100 V

±20

2.3

1.8

6.2

4.9

V

A

A

1.5 A

8 A

NEW PRODUCT

Thermal Characteristics (@T

Characteristic Symbol

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 5) TC = +25°C

NEW PRODUCT

Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

A = +25°C

T
TA = +70°C 1.1

P

R

P

R

T

J, TSTG

alue Units

D

JA

θ

D

JC

θ

1.8

69 °C/W

14 W

8.7 °C/W

-55 to +150 °C

W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

100 — — V

— — 1 µA

— — ±100 nA

VGS = 0V, ID = 250µA

VDS = 100V, VGS = 0V

VGS = ±16V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

SD

1 — 2.5 V

— — 220

— — 250

— — 1.5 V

VDS = VGS, ID = 250µA

= 10V, ID = 1.6A

V

mΩ

GS

= 4.5V, ID = 1.3A

V

GS

VGS = 0V, IS = 1.1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistnace

C

iss

C

oss

C

rss

R

g

Total Gate Charge (VGS = 4.5V) Qg

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6 .Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

Q

Q

t

D(on)

t

D(off)

Q

gs

gd

t

r

t

f

t

rr

rr

— 401 —

— 22 —

— 17 —

— 2.1 — Ω

— 4.1 —

— 8.3 —

— 1.5 —

— 2 —

— 6.8 —

— 8.2 —

— 7.9 —

— 3.6 —

— 17 — ns

— 9.8 — nC

pF

nC

ns

= 25V, VGS = 0V

V

DS

f = 1.0MHz

VDS = 0V, V

= 50V, ID = 1.6A

V

DS

V

= 50V, V

DS

= 6.8Ω, ID = 1.0A

R

G

= 1.1A, di/dt =100A/μs

I

S

= 0V, f = 1.0MHz

GS

= 4.5V,

GS

DMN10H220LE

Document number: DS36475 Rev. 2 - 2

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www.diodes.com

May 2014

© Diodes Incorporated