Diodes DMN10H220L User Manual
NEW PRODUCT
Product Summary
I
V
R
(BR)DSS
100V
220mΩ @ V
250mΩ @ VGS = 4.5V
DS(on) max
GS
= 10V
D
TA = +25°C
1.6A
1.3A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
Load Switch
SOT23
G
Top View Pin Configuration
DMN10H220L
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0072 grams (approximate)
D
D
G
S
Equivalent Circuit
S
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMN10H220L-7 Standard SOT23 3,000/Tape & Reel
DMN10H220L-13 Standard SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018 2019
Code A B C D E F G
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN10H220L
Document number: DS36720 Rev. 2 - 2
N1H = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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February 2014
© Diodes Incorporated
)
g
g
g
)
r
)
r
r
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
(Note 6)
Continuous Drain Current (Note 5) VGS = 10V
(Note 5)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
V
DSS
V
GSS
T
= +25C
A
= +70C
T
A
T
= +25C
A
T
= +70C
A
= +25°C
T
A
TA = +70°C
(Note 6)
(Note 5) 177
I
D
I
D
I
S
I
DM
R
T
J, TSTG
P
D
θJA
DMN10H220L
100 V
16
1.6
1.3
1.4
1.1
0.6 A
8 A
1.3
0.8
94
-55 to +150 °C
V
A
A
W
°C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
100 — — V
— — 1 μA
— — ±100 nA
VGS = 0V, ID = 250μA
VDS = 100V, VGS = 0V
VGS = 16V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
V
GS(th
R
DS (ON)
V
SD
1 — 2.5 V
—
— 0.7 1.2 V
— 220
— 250
VDS = VGS, ID = 250μA
= 10V, ID = 1.6A
V
mΩ
GS
V
= 4.5V, ID = 1.3A
GS
VGS = 0V, IS = 1.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Q
Q
t
D(on
t
D(off
Q
s
d
t
t
f
t
r
r
— 401 —
— 22 —
— 17 —
— 2.1 — Ω
— 4.1 —
— 8.3 —
— 1.5 —
— 2 —
— 6.8 —
— 8.2 —
— 7.9 —
— 3.6 —
— 17 — ns
— 9.8 — nC
pF
nC
ns
= 25V, VGS = 0V
V
DS
f = 1MHz
VDS = 0V, V
= 50V, ID = 1.6A
V
DS
V
= 50V, V
DS
R
= 6.8ΩID = 1A
G
= 1.1A, di/dt =100A/μs
I
F
= 0V, f = 1MHz
GS
= 4.5V,
GS
DMN10H220L
Document number: DS36720 Rev. 2 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
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