Diodes DMN10H170SFG User Manual

Y

YWW

NEW PRODUCT

DMN10H170SFG

N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

D

D

Bottom View

Features

 100% Unclamped Inductive Switch (UIS) test in production

 Low R

 Small form factor thermally efficient package enables higher

density end products

 Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

 Case: POWERDI3333

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.034 grams (approximate)

Pin 1

S

S

S

G

D

G

S

Equivalent Circuit

Product Summary

max

I

D

2.9A

2.7A

V

(BR)DSS

100V

R

122m @ V

133m @ VGS = 4.5V

DS(ON)

max

GS

TA = +25°C

= 10V

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

Top View

POWERDI3333

D

D

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMN10H170SFG-7 Standard POWERDI3333 2000/Tape & Reel

DMN10H170SFG-13 Standard POWERDI3333 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

G17

DMN10H170SFG

Document number: DS36147 Rev. 4 - 2

G17 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)

1 of 6

www.diodes.com

August 2013

© Diodes Incorporated

®

)

g

g

g

)

r

)

r

r

DMN10H170SFG

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = 10V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

= +25°C

T

A

T

= +70°C

A

= +25°C

T

C

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

Avalanche Current (Note 7) IAR

Avalanche Energy (Note 7) EAR

100 V
±20 V

2.9

2.4

A

8.5

3.7

3.0

A

3.0 A
16 A

5.3 A

20 mJ

NEW PRODUCT

Thermal Characteristics (@T

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

= +25°C

T

A

TA = +70°C

Steady State

t<10s 82 °C/W

= +25°C

T

A

TA = +70°C

Steady State

t<10s 36 °C/W

P

R

P

R

R

T

J, TSTG

JA

JA

JC

D

D

0.94

0.6

137 °C/W

2.0

1.3
60 °C/W

7.0 °C/W

-55 to +150 °C

W

W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS

DSS

GSS

100 — — V

— —
— —

1.0 A

±100 nA

VGS = 0V, ID = 250A
VDS = 100V, VGS = 0V
VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS(ON)

|Y
V

fs

SD

1.0 — 3.0 V
—
—
—

|

—

99 122

104 133

4.4 — S

0.7 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 3.3A

V

m

GS

= 4.5V, ID = 3.0A

V

GS

VDS = 10V, ID = 3.3A
VGS = 0V, IS = 3.3A

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. UIS in production with L = 1.43mH, T

8. Short duration pulse test used to minimize self-heating effect.

POWERDI is a registered trademark of Diodes Incorporated

9. Guaranteed by design. Not subject to product testing.

= +25°C.

J

DMN10H170SFG

Document number: DS36147 Rev. 4 - 2

Q

Q

t

D(on

t

t

D(off

t

f

t

r

Q

r

www.diodes.com

—
—
—
—
—
—
— 3.3 —

s

— 3.0 —

d

— 4.4 —

870.7

40.8

24.6

1.1

7.0

14.9

— 2.3 —
— 13.9 —
— 3.4 —
— 22.4 —
— 19.7 —

2 of 6

—
—
—
—
—
—

pF

V

= 25V, VGS = 0V,

pF
pF

DS

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC

V

= 50V, ID = 3.3A

nC

DS

nC

ns
ns
ns

= 50V, V

V

DD

= 6.0, ID = 3.3A

R

GEN

GEN

ns
ns

I

= 3.3A, dI/dt = 100A/s

S

nC

= 10V,

August 2013

© Diodes Incorporated